• Journal of KIISE:Computer Systems and Theory
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• v.27 no.6
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• pp.549-557
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• 2000

Distributed Memory Machine(DMM) is necessary for the effective computation of the data which is complicated and very large. Task scheduling is a method that reduces the communication time among tasks to reduce the total execution time of application program and is very important for the improvement of DMM. Task Duplicated based Scheduling(TDS) method improves execution time by reducing communication time of tasks. It uses clustering method which schedules tasks of the large communication time on the same processor. But there is a problem that cannot optimize communication time between task sending data and task receiving data. Hence, this paper proposes a new method which solves the above problem in TDS. Modified Task Duplicated based Scheduling(MTDS) method which can approximately optimize the communication time between task sending data and task receiving data by checking the optimal condition, resulted in the minimization of task execution time by reducing the communication time among tasks. Also system modeling shows that task execution time of MTDS is about 70% faster than that of TDS in the best case and the same as the result of TDS in the worst case. It proves that MTDS method is better than TDS method.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.12-17
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• 2001

It is shown in the present study that during the HTS (hot temperature storage) test, the metal contamination by impure elements can be highly susceptible to the void formation, leading to the open failure of the power line in the memory device. Such a functional failure associated with the metal contamination was investigated to be dominant in the early stages of the HTS test while the formation of a stress-driven void is mainly observed in the later stages. In particular, it was found that the void formed in the contaminated metal takes on a slit-like shape which has been known to be characteristic of the stress-related voiding. The impure elements leading to the metal degradation were identified to be carbon and oxygen introduced during the metal sputtering process. The experimental works show that the device reliability was significantly improved by reducing the level of such impure elements within metal. It is shown in the present study that during the HTS (hot temperature storage) test, the metal contamination by impure elements can be highly susceptible to the void formation, leading to the open failure of the power line in the memory device. Such a functional failure associated with the metal contamination was investigated to be dominant in the early stages of the HTS test while the formation of a stress-driven void is mainly observed in the later stages. In particular, it was found that the void formed in the contaminated metal takes on a slit-like shape which has been known to be characteristic of the stress-related voiding. The impure elements leading to the metal degradation were identified to be carbon and oxygen introduced during the metal sputtering process. The experimental works show that the device reliability was significantly improved by reducing the level of such impure elements within metal.

• Structural Engineering and Mechanics
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• v.74 no.1
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• pp.129-143
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• 2020

This study proposes a new shape memory alloy-tuned mass damper (SMA-TMD) and investigates the effectiveness of this damper in reducing and controlling the vibrations of a transmission tower-line system under various seismic excitations. Based on a practical transmission line system and considering the geometric nonlinearity of this system, the finite element (FE) software ANSYS is used to create an FE model of the transmission tower-line system and simulate the proposed SMA-TMD. Additionally, the parameters of the SMA springs are optimized. The effectiveness of a conventional TMD and the proposed SMA-TMD in reducing and controlling the vibrations of the transmission tower-line system under seismic excitations is investigated. Moreover, the effects of the ground motion intensity and frequency ratio on the reduction ratio (η) of the SMA-TMD are studied. The vibration reduction effect of the SMA-TMD under various seismic excitations is superior to that of the conventional TMD. Changes in the ground motion intensity and frequency ratio have a significant impact on the η of the SMA-TMD. As the ground motion intensity and frequency ratio increase, the η values of the SMA-TMD first increase and then decrease. Studying the vibration reduction effects of the SMA-TMD can provide a reference for the practical engineering application of this damper.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.2
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• pp.149-157
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• 2020

Today, due to the large amount of data duplication caused by the increase in user data, various deduplication studies have been conducted. However, research on personal storage is relatively poor. Personal storage, unlike high-performance computers, needs to perform deduplication while reducing CPU and memory resource usage. In this paper, we propose an adaptive algorithm that selectively applies fixed size chunking (FSC) and whole file chunking (WFH) according to the file type and size in order to maintain the deduplication rate and reduce the load in personal storage. We propose an algorithm for minimization. The experimental results show that the proposed file system has more than 1.3 times slower at first write operation but less than 3 times reducing in memory usage compare to LessFS and it is 2.5 times faster at rewrite operation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• Journal of KIISE:Computer Systems and Theory
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• v.36 no.5
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• pp.412-421
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• 2009

Due to the physical characteristics of NAND flash memory, overwrite operations are not permitted at the same location, and therefore erase operations are required prior to rewriting. These extra operations cause performance degradation of NAND flash memory file system. Since it also has an upper limit to the number of erase operations for a specific location, frequent erases should reduce the lifetime of NAND flash memory. These problems can be resolved by delaying write operations in order to improve I/O performance: however, it will lower the cache hit ratio. This paper proposes a policy of page management using double cache for NAND flash memory file system. Double cache consists of Real cache and Ghost cache to analyze page reference patterns. This policy attempts to delay write operations in Ghost cache to maintain the hit ratio in Real cache. It can also improve write performance by reducing the search time for dirty pages, since Ghost cache consists of Dirty and Clean list. We find that the hit ratio and I/O performance of our policy are improved by 20.57% and 20.59% in average, respectively, when comparing them with the existing policies. The number of write operations is also reduced by 30.75% in average, compared with of the existing policies.

• Journal of KIISE
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• v.44 no.7
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• pp.658-667
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• 2017

The demand for large-scale storage systems has continued to grow due to the emergence of multimedia, social-network, and big-data services. In order to improve the response time and reduce the load of such large-scale storage systems, DRAM-based in-memory cache systems are becoming popular. However, the high cost of DRAM severely restricts their capacity. While the method of compressing cache entries has been proposed to deal with the capacity limitation issue, compression and decompression, which are technically difficult to parallelize, induce significant processing overhead and in turn retard the response time. A selective compression scheme is proposed in this paper for in-memory file system caches that rapidly estimates the compression ratio of incoming cache entries with their Shannon entropies and compresses cache entries with low compression ratio. In addition, a description is provided of the design and implementation of an in-kernel in-memory file system cache with the proposed selective compression scheme. The evaluation showed that the proposed scheme reduced the execution time of benchmarks by approximately 18% in comparison to the conventional non-compressing in-memory cache scheme. It also provided a cache hit ratio similar to the all-compressing counterpart and reduced 7.5% of the execution time by reducing the compression overhead. In addition, it was shown that the selective compression scheme can reduce the CPU time used for compression by 28% compared to the case of the all-compressing scheme.

• Journal of KIISE:Computer Systems and Theory
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• v.31 no.12
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• pp.704-715
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• 2004

Recently, a single or multi processor system uses the hierarchical memory structure to reduce the time gap between processor clock rate and memory access time. A cache memory system includes especially two or three levels of caches to reduce this time gap. Moreover, one of the most important things In the hierarchical memory system is the hit rate in level 1 cache, because level 1 cache interfaces directly with the processor. Therefore, the high hit rate in level 1 cache is critical for system performance. A victim cache, another high level cache, is also important to assist level 1 cache by reducing the conflict miss in high level cache. In this paper, we propose the advanced high level cache management scheme based on the processor reuse information. This technique is a kind of cache replacement policy which uses the frequency of processor's memory accesses and makes the higher frequency address of the cache location reside longer in cache than the lower one. With this scheme, we simulate our policy using Augmint, the event-driven simulator, and analyze the simulation results. The simulation results show that the modified processor reuse information scheme(LIVMR) outperforms the level 1 with the simple victim cache(LIV), 6.7% in maximum and 0.5% in average, and performance benefits become larger as the number of processors increases.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.430-439
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• 2004

This paper describes a design of 8192/2048-point FFT/IFFT processor (CFFT8k2k), which performs multi-carrier modulation/demodulation in OFDM-based DVB-T receiver. Since a large size FFT requires a large buffer memory, two design techniques are considered to achieve memory-efficient implementation of 8192-point FFT/IFFT. A hybrid structure, which is composed of radix-4 single-path delay feedback (R4SDF) and radix-4 single-path delay commutator (R4SDC), reduces its memory by 20% compared to R4SDC structure. In addition, a memory reduction of about 24% is achieved by a novel two-step convergent block floating-point scaling. As a result, it requires only 57% of memory used in conventional design, reducing chip area and power consumption. The CFFT8k2k core is designed in Verilog-HDL, and has about 102,000 Bates, RAM of 292k bits, and ROM of 39k bits. Using gate-level netlist with SDF which is synthesized using a $0.25-{\um}m$ CMOS library, timing simulation show that it can safely operate with 50-MHz clock at 2.5-V supply, resulting that a 8192-point FFT/IFFT can be computed every 164-${\mu}\textrm{s}$. The functionality of the core is fully verified by FPGA implementation, and the average SQNR of 60-㏈ is achieved.

• KIPS Transactions on Computer and Communication Systems
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• v.8 no.6
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• pp.127-138
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• 2019

The data response speed is a critical issue of cloud services because it directly related to the user experience. As such, the in-memory database is widely adopted in many cloud-based applications for achieving fast data response. However, the current implementation of the in-memory database is mostly based on the linked list-based hash table which cannot guarantee the constant data response time. Thus, cuckoo hashing was introduced as an alternative solution, however, there is a disadvantage that only half of the allocated memory can be used for storing data. Subsequently, bucketized cuckoo hashing (BCH) improved the performance of cuckoo hashing in terms of memory efficiency but still cannot overcome the limitation that the insert overhead. In this paper, we propose a data management solution called Wall Cuckoo which aims to improve not only the insert performance but also lookup performance of BCH. The key idea of Wall Cuckoo is that separates the data among a bucket according to the different hash function be used. By doing so, the searching range among the bucket is narrowed down, thereby the amount of slot accesses required for the data lookup can be reduced. At the same time, the insert performance will be improved because the insert is following up the operation of the lookup. According to analysis, the expected value of slot access required for our Wall Cuckoo is less than that of BCH. We conducted experiments to show that Wall Cuckoo outperforms the BCH and Sorting Cuckoo in terms of the amount of slot access in lookup and insert operations and in different load factor (i.e., 10%-95%).