• 제목/요약/키워드: recombination time

검색결과 157건 처리시간 0.027초

The Influence of Dehydrogenation Speed on the Microstructure and Magnetic Properties of Nd-Fe-B Magnets Prepared by HDDR Process

  • Cha, Hee-Ryoung;Yu, Ji-Hun;Baek, Youn-Kyoung;Kwon, Hae-Woong;Kim, Yang-Do;Lee, Jung-Goo
    • Journal of Magnetics
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    • 제19권1호
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    • pp.49-54
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    • 2014
  • The influence regarding the dehydrogenation speed, at the desorption-recombination state during the hydrogenation-disproportionation-desorption-recombination (HDDR) process, on the microstructure and magnetic properties of Nd-Fe-B magnetic powders has been studied. Strip cast Nd-Fe-B-based alloys were subjected to the HDDR process after the homogenization heat treatment. During the desorption-recombination stage, both the pumping speed and time of hydrogen were systematically changed in order to control the speed of the desorption-recombination reaction. The magnetic properties of HDDR powders were improved as the pumping speed of hydrogen at the desorption-recombination stage was decreased. The lower pumping speed resulted in a smaller grain size and higher DoA. The coercivity and the remanence of the 200-300 ${\mu}m$ sized HDDR powder increased from 12.7 to 14.6 kOe and from 8.9 to 10.0 kG, respectively. In addition, the remanence was further increased to 11.8 kG by milling the powders down to about 25-90 ${\mu}m$, resulting in $(BH)_{max}$ of 28.8 MGOe.

A Yeast MRE3/REC114 Gene is Essential for Normal Cell Growth and Meiotic Recombination

  • Leem, Sun-Hee
    • Journal of Microbiology
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    • 제37권4호
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    • pp.248-255
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    • 1999
  • We have analyzed the MRE3/REC114 gene of Saccharomyces cerevisiae, previously detected in isolation of mutants defective in meiotic recombination. We cloned the MRE3/REC114 gene by complementation of the meiotic recombination defect and it has been mapped to chormosome XIII. The DNA sequence analysis revealed that the MRE3 gene is identical to the REC114 gene. The upstream region of the MRE3/REC114 gene contains a T_4C site, a URS (upstream repression sequence) and a TR (T-rich) box-like sequence, which reside upstream of many meiotic genes. Coincidentally, northern blot analysis indicated that the three sizes of MRE3/REC114 transcripts, 3.4, 1.4 and 1.2 kb, are induced in meiosis. A less abundant transcript of 1.4 kb is detected in both mitotic and meiotic cells, suggesting that it is needed in mitosis as well as meiosis. To examine the role of the MRE3/REC114 gene, we constructed mre3 disruption mutants. Strains carrying an insertion or null deletion of the MRE3/REC114 gene showed slow growth in nutrient medium and the doubling time of these cells increased approximately by 2-fond compared to the wild-type strain. Moreover, the deletion mutant (${\delta}$mre3) displayed no meiotically induced recombination and no viable spores. The mre3/rec114 spore lethality can be suppressed by spo13, a mutation that causes cells to bypass reductional division. The double-stranded breaks (DSBs) which are involved in initiation of meiotic recombination were not detected in the analysis of meiotic chromosomal DNA from the mre3/rec114 disruptant. From these results we suggest that the MRE3/REC114 gene product is essential in normal growth and in early meiotic stages involved in meiotic recombination.

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Turn-off time improvement by fast neutron irradiation on pnp Si Bipolar Junction Transistor

  • Ahn, Sung Ho;Sun, Gwang Min;Baek, Hani
    • Nuclear Engineering and Technology
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    • 제54권2호
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    • pp.501-506
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    • 2022
  • Long turn-off time limits high frequency operation of Bipolar Junction Transistors (BJTs). Turn-off time decreases with increases in the recombination rate of minority carriers at switching transients. Fast neutron irradiation on a Si BJT incurs lattice damages owing to the displacement of silicon atoms. The lattice damages increase the recombination rate of injected holes with electrons, and decrease the hole lifetime in the base region of pnp Si BJT. Fast neutrons generated from a beryllium target with 30 MeV protons by an MC-50 cyclotron were irradiated onto pnp Si BJTs in experiment. The experimental results show that the turn-off time, including the storage time and fall time, decreases with increases in fast neutron fluence. Additionally, it is confirmed that the base current increases, and the collector current and base-to-collector current amplification ratio decrease due to fast neutron irradiation.

Transport Properties of Conversion Materials for Digital Radiography

  • Kim, Jae-Hyung;Park, Chang-Hee;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제8권6호
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    • pp.250-254
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    • 2007
  • Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

디지털 X-선 변환물질을 위한 비소(As) 첨가 비정질 셀레늄(a-Se) 박막의 수송현상 (Transport phenomena of a-Se:As thin film for digital X-ray Conversion Material)

  • 박창희;김재형
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.282-283
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    • 2006
  • The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

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Transport property of a Se:As films for digital x ray imaging

  • 김재형;김재형
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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    • pp.85-88
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    • 2006
  • The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

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ULTRAFAST INTERFACIAL ELECTRON TRAPPING AND RECOMBINATION IN PHOTOEXCITED COLLOIDAL CADMIUM SULFIDE

  • Kim, Seong-Kyu
    • Journal of Photoscience
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    • 제4권1호
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    • pp.11-16
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    • 1997
  • We measured, using femtosecond pump-probe experiment, the time evolution of transient absorption in aqueous CdS colloids. The signal rises within the time resolution (= 0.5 ps) of the experiment and decays with two exponential time constants, 4.8 ps and 132 ps. The ultrafast rise of the transient absorption is considered to be for shallowly trapped conduction band electrons after photoexcitation. The amplitude ratio of the two decaying components varies with the pump intensity and the decay times increase in the presence of hole scavengers. Even though a biexponential function fits the decay well, we object hat two independent first order processes (geminate and nongeminate recombinations) are responsible for the decay. A function with an integrated rate equation for second order nongeminate recombination plus a long background fits the decay well. The long background is considered to be for deeply trapped charges at the CdS particle.

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High-Frequency Targeted Mutagenesis in Pseudomonas stutzeri Using a Vector-Free Allele-Exchange Protocol

  • Gomaa, Ahmed E.;Deng, Zhiping;Yang, Zhimin;Shang, Liguo;Zhan, Yuhua;Lu, Wei;Lin, Min;Yan, Yongliang
    • Journal of Microbiology and Biotechnology
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    • 제27권2호
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    • pp.335-341
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    • 2017
  • The complexity of the bacterial recombination system is a barrier for the construction of bacterial mutants for the further functional investigation of specific genes. Several protocols have been developed to inactivate genes from the genus Pseudomonas. Those protocols are complicated and time-consuming and mostly do not enable easy construction of multiple knock-ins/outs. The current study describes a single and double crossover-recombination system using an optimized vector-free allele-exchange protocol for gene disruption and gene replacement in a single species of the family Pseudomonadaceae. The protocol is based on self-ligation (circularization) for the DNA cassette which has been obtained by overlapping polymerase chain reaction (Fusion-PCR), and carries an antibiotic resistance cassette flanked by homologous internal regions of the target locus. To establish the reproducibility of the approach, three different chromosomal genes (ncRNA31, rpoN, rpoS) were knocked-out from the root-associative bacterium Pseudomonas stutzeri A1501. The results showed that the P. stutzeri A1501 mutants, which are free of any plasmid backbone, could be obtained via a single or double crossover recombination. In order to optimize this protocol, three key factors that were found to have great effect on the efficiency of the homologous recombination were further investigated. Moreover, the modified protocol does not require further cloning steps, and it enables the construction of multiple gene knock-in/out mutants sequentially. This work provides a simple and rapid mutagenesis strategy for genome editing in P. stutzeri, which may also be applicable for other gram-negative bacteria.

유전자 발현 조절과 DNA 3차원적 구조와의 관계 (Regulation of Gene Expression and 3-Dimensional Structure of DNA)

  • 김병동
    • 한국식물학회:학술대회논문집
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    • 한국식물학회 1987년도 식물생명공학 심포지움 논문집 Proceedings of Symposia on Plant Biotechnology
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    • pp.149-155
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    • 1987
  • Growth and development of a higher plant, or any living organism for that matter, could be defined as an orderly expression of the genome in time and space in close interaction with the environment. During differentiation and development of a tissue or organ a group of genes must be selectively turned on or turned off mainly by trans-acting regulators. In this general concept of regulation of regulation of gene expression, a DNA molecule is recognized at a specific nucleotide sequence by DNA-binding factors. Molecular biology of the regulatory factors such as hormones, and their receptors, target DNA sequences and DNA-binding proteins are well advanced. What is not clearly understood is the molecular basis of the interactions between DNA and binding factors, expecially of the usages of the dyad symmetry of the target DNA sequences and the dimeric nature of the DNA-binding proteins. A unique 3-dimensional structure of DNA has been proposed that may play an important role in the orderly expression of the gene. A foldback intercoil (FBI) DNA configuration which was originally found by electron microscopy among mtDNA molecules from pearl millet has some unique features. The FBI configuration of DNA is believed to be formed when a flexible double helix folds back and interwines in the widened major grooves resulting in a four stranded, intercoil DNA whose thickness is the same as that of double stranded DNA. More recently, the FBI structure of DNA has been also induced in vitro by a novel enzyme which was purified from pearl millet mitochondria. It has been proposed that the FBI DNA could be utillized in intramolecular recombination which leads to inversion or deletion, and in intermolecular recombination which can lead to either site-specific recombination, genetic recombination via single strand invasion, or cross strand recombination. The structure and function of DNA in 3-dimensional aspect is emphasized for better understanding orderly expression of genes during growth and development.

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Study of Diffusion Controlled Reactions in Liquids: A Perturbation Series Solution and a Numerical Solution of the Smoluchowski Equations

  • Mino Yang;Sangyoub Lee;Kim Yung Sik;Kook Joe Shin
    • Bulletin of the Korean Chemical Society
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    • 제10권6호
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    • pp.529-535
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    • 1989
  • A general perturbation series solution of the Smoluchowski equation is applied to investigate the rate of recombination and the remaining probability of a pair of particles in liquids. The radiative boundary condition is employed and the convergence of the perturbation series is analyzed in terms of a convergene factor in time domain. The upper bound to the error introduced by the n-th order perturbation scheme is also evaluated. The long time behaviors of the rate of recombination and the remaining probability are found to be expressed in closed forms if the perturbation series is convergent. A new and efficient method of purely numerical integration of the Smoluchowski equation is proposed and its results are compared with those obtained by the perturbation method. For the two cases where the interaction between the particles is given by (i) the Coulomb potential and (ii) the shielded Coulomb potential, the agreement between the two results is found to be excellent.