• 통합자연과학논문집
• /
• 제9권4호
• /
• pp.275-280
• /
• 2016

Intensity modulated photovoltage spectroscopy (IMVS) analysis of organic solar cells (OSCs) with a bulk-heterojunction (BHJ) film composed of P3HT and $PC_{61}BM$ was performed. The dynamic response of charge recombination by the post-annealing approach in $P3HT/PC_{61}BM$ BHJ solar cells characterized by IMVS demonstrated that post-annealing reduced the recombination of electron carriers in the device. The recombination times of $P3HT/PC_{61}BM$ BHJ solar cells post-annealed at room temperature, 80, 120, and $140^{\circ}C$ were 0.009, 0.020, 0.024, and 0.030 ms, respectively, at a short-circuit current of 0.18 mA. The results indicated that the IMVS analysis can be effectively used as powerful.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.63-66
• /
• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

• 식물병연구
• /
• 제29권2호
• /
• pp.193-199
• /
• 2023

The apple stem grooving virus (ASGV) is one of the most harmful latent viruses infecting pear orchards worldwide. To examine the genetic diversity of ASGV in Korean pear orchards, the complete coat protein (CP) gene of five ASGV isolates collected from various regions were identified. The five Korean ASGV isolates showed 88-96% nucleotide identity with the 11 isolates worldwide occurring elsewhere in the world. Phylogenetic analysis of five isolates, as well as the previously sequenced isolates, indicated that the ASGV clusters had no correlation with the host or geographical regions of origin. Recombination analysis showed that one of the five Korean isolates is a recombinant, with a recombination site in the CP gene region (nt 532-708). This study is the first report of natural recombination within the CP gene of ASGV isolates from pears grown in Korea.

• ETRI Journal
• /
• 제30권1호
• /
• pp.89-100
• /
• 2008

We consider the feature recombination technique in a multiband approach to speaker identification and verification. To overcome the ineffectiveness of conventional feature recombination in broadband noisy environments, we propose a new subband feature recombination which uses subband likelihoods and a subband reliable-feature selection technique with an adaptive noise model. In the decision step of speaker recognition, a few very low unreliable feature likelihood scores can cause a speaker recognition system to make an incorrect decision. To overcome this problem, reliable-feature selection adjusts the likelihood scores of an unreliable feature by comparison with those of an adaptive noise model, which is estimated by the maximum a posteriori adaptation technique using noise features directly obtained from noisy test speech. To evaluate the effectiveness of the proposed methods in noisy environments, we use the TIMIT database and the NTIMIT database, which is the corresponding telephone version of TIMIT database. The proposed subband feature recombination with subband reliable-feature selection achieves better performance than the conventional feature recombination system with reliable-feature selection.

• Journal of Microbiology and Biotechnology
• /
• 제25권5호
• /
• pp.598-605
• /
• 2015

The cohesin complex holds sister chromatids together and prevents premature chromosome segregation until the onset of anaphase. Mcd1 (also known as Scc1), the α-kleisin subunit of cohesin, is a key regulatory subunit of the mitotic cohesin complex and is required for maintaining sister chromatid cohesion, chromosome organization, and DNA repair. We investigated the function of Mcd1 in meiosis by ectopically expressing Mcd1 during early meiotic prophase I in Saccharomyces cerevisiae. Mcd1 partially regulated the progression of meiotic recombination, sister chromatid separation, and nuclear division. DNA physical analysis during meiotic recombination showed that Mcd1 induced double-strand breaks (DSBs) but negatively regulated homologous recombination during DSB repair; Mcd1 expression delayed post-DSB stages, leading to inefficiencies in the DSB-to-joint molecule (JM) transition and subsequent crossover formation. These findings indicate that meiotic cells undergo Mcd1-mediated DSB formation during prophase I, and that residual Mcd1 could regulate the progression of JM formation during meiotic recombination.

• 태양에너지
• /
• 제8권2호
• /
• pp.12-18
• /
• 1988

The effect of surface recombination current density on the saturation current density in Si solar cell has been studied. Theoretical model for surface recombination current was set up from emitter transparent model of M.A. Shibib, and saturation current of Si solar cell made by ion implantation method was also measured by digital electrometer. The theoretical surface recombination current density which is the same as saturation surface recombination current density in Shibib model was $10^{-11}[A/cm^2]$ and the measured value was ranged from $8{\times}10^{-10}$ to $2{\times}10^{-9}[A/cm^2]$. Comparing with the ideal p-n junction of Shockley, transparent emitter model shows improved result by $10^2$ order of saturation current density. But there still exists $10^2$ order of difference of saturation current density between theoretical and actual values, which are assumed to be caused by 1) leakage current through solar cell edge, 2) recombination of carriers in the depletion layer, 3) the series resistance effect and 4) the tunneling of carriers between states in the band gap.

• 전자공학회논문지A
• /
• 제29A권9호
• /
• pp.56-64
• /
• 1992

Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.

• Journal of Magnetics
• /
• 제4권4호
• /
• pp.131-135
• /
• 1999

The HDDR characteristics of the Nd-Fe-B-type isotropic and anisotropic HDDR alloys were investigated using three types of alloys: alloy A $(Nd_{12.6}Fe_{81.4}B_6), alloy B (Nd_{12.6}Fe_{81.3}B_6Zr_{0.1}), and alloy C (Nd_{12.6}Fe_{68.8}Co_{11.5}B_6Ga_{1.0}Zr_{0.1}$). The alloy A is featured with the isotropic HDDR character, while alloy B and C are featured with the anisotropic HDDR character. Hydrogenation and disproportionation characteristics of the alloys were examined using DTA under hydrogen gas. Recombination characteristics of the alloys were examined by observing the coercivity variation as a function of recombination time. The present study revealed that the alloy C exhibits slightly higher hydrogenation and disproportionation temperatures compared to the alloy A and B. Recombination of the anisotropic alloy B and C takes place more rapidly with respect to the isotropic alloy A. The intrinsic coercivities of the recombined materials rapidly increased with increasing the recombination time and then showed a peak, after which the coercivities decreased gradually. The degraded coercivity was, however, recovered significantly on prolonged recombination treatment. Compared with the isotropic HDDR alloy A the anisotropic HDDR alloy B and C are notable for their greater recovery of coercivity. The significant recovery of coercivity was accounted for the in terms of the development of well-defined smooth grain boundary between the recombined grains on prolonged recombination.

• Journal of Mechanical Science and Technology
• /
• 제20권8호
• /
• pp.1292-1301
• /
• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

• 한국재료학회지
• /
• 제27권2호
• /
• pp.107-112
• /
• 2017

The BCBJ (Back Contact and Back Junction) or back-lit solar cell design eliminates shading loss by placing the pn junction and metal electrode contacts all on one side that faces away from the sun. However, as the electron-hole generation sites now are located very far from the pn junction, loss by minority-carrier recombination can be a significant issue. Utilizing Medici, a 2-dimensional semiconductor device simulation tool, the interdependency between the substrate thickness and the minority-carrier recombination lifetime was studied in terms of how these factors affect the solar cell power output. Qualitatively speaking, the results indicate that a very high quality substrate with a long recombination lifetime is needed to maintain the maximum power generation. The quantitative value of the recombination lifetime of minority-carriers, i.e., electrons in p-type substrates, required in the BCBJ cell is about one order of magnitude longer than that in the front-lit cell, i.e., $5{\times}10^{-4}sec$ vs. $5{\times}10^{-5}sec$. Regardless of substrate thickness up to $150{\mu}m$, the power output in the BCBJ cell stays at nearly the maximum value of about $1.8{\times}10^{-2}W{\cdot}cm^{-2}$, or $18mW{\cdot}cm^{-2}$, as long as the recombination lifetime is $5{\times}10^{-4}s$ or longer. The output power, however, declines steeply to as low as $10mW{\cdot}cm^{-2}$ when the recombination lifetime becomes significantly shorter than $5{\times}10^{-4}sec$. Substrate thinning is found to be not as effective as in the front-lit case in stemming the decline in the output power. In view of these results, for BCBJ applications, the substrate needs to be only mono-crystalline Si of very high quality. This bars the use of poly-crystalline Si, which is gaining wider acceptance in standard front-lit solar cells.