• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.79.4-79
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• 1998

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.1-6
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• 2011

We have developed the process of forming one body S-type cantilever probe in the recessed trench for fine-pitched MEMS probe card. The probe (cantilever beam and pyramid tip) was formed using Deep RIE etching and wet etching. The pyramid tip was formed by the wet etching using KOH and TMAH. The process of forming the curved probe was also developed by the wet etching. Therefore, the fabricated probe is applicable for the probe card for DRAM, Flash memory and RF devices tests and probe tip for IC test socket.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.365-370
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• 1998

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.152-153
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• 1994

A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.

• Bulletin of the Korean Chemical Society
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• v.16 no.3
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• pp.248-251
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• 1995

The crystal structure of Ba46-X, Ba46Al92Si100O384 [a= 25.297(1) Å], has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd&bar{3}at 21(1) ℃. The crystal was prepared by ion exchange in flowing stream of 0.05 M Ba(OH)2 aqueous solution for 5 days. The crystal was then dehydrated at 380 ℃ and 2 × 10-6 Torr for 2 days. The structure was refined to the final error indices R1= 0.051 and Rw= 0.054 with 369 reflections for which I > 3σ(I). In this structure, all Ba2+ ions are located at the three different crystallographic sites: fourteen Ba2+ ions are located at site Ⅰ, the centers of the double six rings, two Ba2+ ions lie at site Ⅰ', in the sodalite cavity opposite double six rings(D6R's) and another thirty Ba2+ ions are located at site Ⅱ in the supercage. Two Ba2+ ions are recessed ca. 0.27 Å into the sodalite cavity from their three O(3) oxygen plane and thirty Ba2+ ions are recessed ca. 1.11 Å into the supercage from their three O(2) oxygen planes, respectively (Ba(1)-O(3) = 2.76(1) Å, O(3)-Ba(1)-O(3) = 180(0)°, Ba(2)-O(3) = 2.45(1) Å, O(3)-Ba(2)-O(3) = 108(1)°, Ba(3)-O(2)=2.65(1) Å, and O(2)-Ba(3)-O(2)=103.9(4)°).

• Journal of Periodontal and Implant Science
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• v.28 no.4
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• pp.785-797
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• 1998

This study has been done to prove that keratinized gingiva is required for the periodontal health and to analyse the adequate width that is necessary. Until now, the study on frenum has been documented on changing its location. But the location or the formation of the frenum has not been reported. This experiment has used 173 patients from the department of periodontology of Dankook University to investigate the width of keratinized gingiva, the formation of the frenum and its location for the frequency. This study also looks into the relationship between the gingival recession and the structure of the frenum, and affects they have on periodontal health. The width of the keratinized gingiva in the mandible has been found to be highest in the lateral incisor than in the central incisor. The width decreased from the canine to the first premolar until it reached the molar. The interproximal area of the mandibular frenum was 77.9%, which was greater than the frequency (22.1%) from the midline of the teeth. The highest frequency of frenum was at 30.6% in between the both central incisor then second greatest at 20.6% in between the right canine and the right first premolar. Frenum was not found in between the second premolar and the distal area. In the morphology of the frenum, it was found that 43.4% out of 551 parts were found to be a single narrow frenum, and the double or triple ligamented form of the complex frenum were found in similar frequency of 237 parts, but the broad frenum was rarely frequent. The incisal area was popular mostly with the single narrow frenum, the left premolar area frequented 57.4%, and the right premolar frequented 64.7%. Because the distance between the frenum apex and the gingival margin measured to be about 5mm or greater, the frenum apex started in the mucogingival junction and not just below the keratinized gingiva. In the 551 area investigated, 48.3% of gingiva showed recession, incisal area had recession the least at 44.9%, right buccal side at 47.4%, and right buccal side frequented the highest at 52.1%. The teeth that showed recession recessed at the average of 2.151.0.mm and the left canine showed the greatest amount of gingival recession. In the investigation to find out if the keratinized gingiva and the gingiva recession had mutually related somehow, the width of keratinized gingiva showed no affect on the probing depth, but had affected in the gingiva recession. This investigation showed that the gingival recession and the morphology of the frenum related in that, the single narrow frenum had recessed the least and the broad frenum recessed the most. With this analysis, a conclusion was drawn that the morphology of the frenum had affected in the gingical recession.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.156-157
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• 2012

단일 셀에서 비휘발성 및 고속의 휘발성 메모리를 모두 구동할 수 있는 다기능 메모리는 모바일 기기 및 embedded 장치의 폭발적인 성장에 있어 그 중요성이 커지고 있다. 따라서 최근 이러한 fusion기술을 응용한 unified RAM (URAM)과 같은 다기능 메모리의 연구가 주목 받고 있다. 이러한 다목적 메모리는 주로 silicon on insulator (SOI)기반의 1T-DRAM과 SONOS기술 기반의 비휘발성 메모리의 조합으로 이루어진다. 하지만 이런 다기능 메모리는 주로 단결정기반의 SOI wafer 위에서 구현되기 때문에 값이 비싸고 사용범위도 제한되어 있다. 따라서 이러한 다기능메모리를 다결정 실리콘을 이용하여 제작한다면 기판에 자유롭게 메모리 적용이 가능하고 추후 3차원 적층형 소자의 구현도 가능하기 때문에 다결정실리콘 기반의 메모리 구현은 필수적이라고 할 수 있겠다. 본 연구에서는 다결정실리콘을 이용한 channel recessed구조의 다기능메모리를 제작하였으며 각 1T-DRAM 및 NVM동작에 따른 memory 특성을 살펴보았다. 실험에 사용된 기판은 상부 비정질실리콘 100 nm, 매몰산화층 200 nm의 SOI구조의 기판을 이용하였으며 고상결정화 방법을 이용하여 $600^{\circ}C$ 24시간 열처리를 통해 결정화 시켰다. N+ poly Si을 이용하여 source/drain을 제작하였으며 RIE시스템을 이용하여 recessed channel을 형성하였다. 상부 ONO게이트 절연막은 rf sputter를 이용하여 각각 5/10/5 nm 증착하였다. $950^{\circ}C$ N2/O2 분위기에서 30초간 급속열처리를 진행하여 source/drain을 활성화 하였다. 계면상태 개선을 위해 $450^{\circ}C$ 2% H2/N2 분위기에서 30분간 열처리를 진행하였다. 제작된 Poly Si MFM에서 2.3V, 350mV/dec의 문턱전압과 subthreshold swing을 확인할 수 있었다. Nonvolatile memory mode는 FN tunneling, high-speed 1T-DRAM mode에서는 impact ionization을 이용하여 쓰기/소거 작업을 실시하였다. NVM 모드의 경우 약 2V의 memory window를 확보할 수 있었으며 $85^{\circ}C$에서의 retention 측정시에도 10년 후 약 0.9V의 memory window를 확보할 수 있었다. 1T-DRAM 모드의 경우에는 약 $30{\mu}s$의 retention과 $5{\mu}A$의 sensing margin을 확보할 수 있었다. 차후 engineered tunnel barrier기술이나 엑시머레이저를 이용한 결정화 방법을 적용한다면 device의 특성향상을 기대할 수 있을 것이다. 본 논문에서는 다결정실리콘을 이용한 다기능메모리를 제작 및 메모리 특성을 평가하였다. 제작된 소자의 단일 셀 내에서 NVM동작과 1T-DRAM동작이 모두 가능한 것을 확인할 수 있었다. 다결정실리콘의 특성상 단결정 SOI기반의 다기능 메모리에 비해 낮은 특성을 보여주었으나 이는 결정화방법, high-k절연막 적용 및 engineered tunnel barrier를 적용함으로써 해결 가능하다고 생각된다. 또한 sputter를 이용하여 저온증착된 O/N/O layer에서의 P/E특성을 확인함으로써 glass위에서의 MFM구현의 가능성도 확인할 수 있었으며, 차후 system on panel (SOP)적용도 가능할 것이라고 생각된다.

• Journal of Biomedical Engineering Research
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• v.29 no.6
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• pp.436-442
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• 2008

Magnetic resonance electrical impedance tomography(MREIT) has been suggested to produce cross-sectional conductivity images of an electrically conducting object such as the human body. In most previous studies, recessed electrodes have been used to inject imaging currents into the object. An MRI scanner was used to capture induced magnetic flux density data inside the object and a conductivity image reconstruction algorithm was applied to the data. This paper reports the performance of a thin and flexible carbon-hydrogel electrode that replaces the bulky and rigid recessed electrode in previous studies. The new carbon-hydrogel electrode produces a negligible amount of artifacts in MR and conductivity images and significantly simplifies the experimental procedure. We can fabricate the electrode in different shapes and sizes. Adding a layer of conductive adhesive, we can easily attach the electrode on an irregular surface with an excellent contact. Using a pair of carbon-hydrogel electrodes with a large contact area, we may inject an imaging current with increased amplitude primarily due to a reduced average current density underneath the electrodes. Before we apply the new electrode to a human subject, we evaluated its performance by conducting MREIT imaging experiments of five swine legs. Reconstructed conductivity images of the swine legs show a good contrast among different muscles and bones. We suggest a future study of human experiments using the carbon-hydrogel electrode following the guideline proposed in this paper.

• Analytical Science and Technology
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• v.18 no.4
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• pp.278-286
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• 2005

The crystal structure of ($Tl_{71}$-Y ($Tl_{71}Si_{121}Al_{71}O_{384}$), ${\alpha}=24.706(3){\AA}$, dehydrated at 653 K and $8{\times}10^{-6}$ torr, has been determined by single-crystal X-ray diffraction techniques in the cubic space group $Fd\bar{3}m$ at 294(1) K. The structure was refined using all intensities to the final error indices (using only the 302 reflection for which $F_{\circ}$ > $4{\sigma}(F_0)$) $R_1=0.0602$ (based on F) and $R_w=0.1744$ (based on $F_2$). The 71 $Tl^+$ ions per unit cell are found at four crystallographically distinct positions. Site I' position in the sodalite cavity opposite D6Rs are each occupied by eighteen $Tl^+$ ions per unit cell; these $Tl^+$ ions are recessed ca. $1.45{\AA}$ into the sodalite cavity from their O(3) plane (Tl-O=2.701(15), $3.163(16){\AA}$ and O-Tl-O=$92.1(4)^{\circ}$). The 23 $T1^+$ ions fill site II in the supercage; these $T1^+$ ions are recessed ca. $1.58{\AA}$ into the supercage from their O(2) plane (Tl-O = 2.850(16), $3.156(16){\AA}$ and O-T1-O = $85.1(5)^{\circ}$). The 19 $Tl^+$ ions lie at site III' in the supercage near a triple 4-ring (Tl-O = 3.10(7), $3.39(5){\AA}$ and O-Tl-O = 47.8(9), $95.3(18)^{\circ}$) and the remaining II ions occupy another site III' near a triple 4-ring in the supercage (Tl-O = 2.81(4), $2.71(4){\AA}$ and O-Tl-O = $57.3(8)^{\circ}$).

• Journal of the Korean Chemical Society
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• v.57 no.1
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• pp.12-19
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• 2013

The single-crystal structure of fully dehydrated partially $Li^+$-exchanged zeolite Y, ${\mid}Li_{50}Na_{25}{\mid}[Si_{117}Al_{75}O_{384}]$-FAU, was determined by single-crystal synchrotron X-ray diffraction techniques in the cubic space group $Fd\bar{3}m$ at 100(1) K. Ion exchange was accomplished by flowing stream of 0.1 M aqueous $LiNO_3$ for 2 days at 293 K, followed by vacuum dehydration at 623 K and $1{\times}10^{-6}$ Torr for 2 days. The structure was refined using all intensities to the final error indices (using only the 801 reflections with ($F_o$ > $4{\sigma}(F_o)$) $R_1/R_2=0.043/0.140$. The 50 $Li^+$ ions per unit cell are found at three different crystallographic sites. The 19 $Li^+$ ions occupy at site I' in the sodalite cavity: the $Li^+$ ions are recessed 0.30 ${\AA}$ into the sodalite cavity from their 3-oxygens plane (Li-O = 1.926(5) ${\AA}$ and $O-Li-O=117.7(3)^{\circ}$). The 20 $Li^+$ ions are found at site II in the supercage, being recessed 0.23 ${\AA}$ into the supercage (Li-O = 2.038(5) ${\AA}$ and $O-Li-O=118.7(3)^{\circ}$). Site III' positions are occupied by 11 $Li^+$ ions: these $Li^+$ ions bind strongly to one oxygen atom (Li-O = 2.00(8) ${\AA}$). About 25 $Na^+$ ions per unit cell are found at four different crystallographic sites: 4 $Na^+$ ions are at site I, 5 at site I', 12 at site II, and the remaining 4 at site III'.