• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.151-156
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• 2015

In order to improve the properties of high-temperature superconducting wire for superconducting cable system, we optimized the electro-polishing (EP), ion-beam assisted deposition (IBAD), superconducting (SC) layer, and baking (heat) treatment. The buffer layer was deposited on electro-polished substrate with RMS roughness ($R_{RMS}$) less than 5 nm. The IBAD process was carried out at $V_{beam}$: 1100 V and $V_{accel}$: 850 V that resulted in highly crystalline film of $LaMnO_3$. Chemical composition of SC layer is key to higher critical current, and we found that composition can be determined by surface color of SC layer. We adopt a proprietary contorl system based on RGB analysis of the surface and achieved critical current of 150 A/4 mm-width. The proposed baking treatment resulted in decreasing of about 10% of fraction defects.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.22-22
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• 2000

DRAM의 고접적화에 따라 기존의 반도체 공정에서 사용중인 여러 가지 기술들이 대부분 그 한계를 보이고 었으며, 대표적인 것이 캐퍼시터 형성기술이다. 따라서 1G DRAM급 이상의 초고집적 회로를 실용화하기 위해서 유전율이 높은 BST ($BrSrTiO_3$) 박막을 이용하여 캐패시터를 제조하려는 기술도 반드시 해결되어야 현재 활발히 실용화 연구가 진행중에 있다. BST 박막을 제조하는 방법은 RF magnetron sputtering, Ion beam reactive co-evaporation, LSM (Liquid Source Misted) CVD, MOCVD 등의 법으로 제조되고 있다. 본 연구에서는 전기-수력 학적 분무(Electro-Hydrodynamic Spray)현상을 이용한 MOCVD에 BaO, SrO, $TiO_2$ 박막을 증착 하여 전기장세기, 기판온도, 시간 등에 따른 특성을 조사하였다. 전기수력학적 분무를 이용한 증착법은 원료를 함유하는 용액을 이용함으로써 이송관의 가열이 필요 없이 장치를 간단하게 할 수 있고, 용액의 유량과 전기장의 세기에 따라 초미세 입자제어도 가능하며, 박막의 조성을 출발 용액으로 부터 조절하는 등의 특징을 가지고 있다. 증착한 박막의 표면, 단면 형상 및 조성을 분석하였고 결정화 여부 및 우선 배향성을 조사하였다. 현재는 개별 박막의 표현 형상과 조성에 대한 연구 결과를 얻었으며, 계속해서 박 막의 여러 특성에 대하 연구할 계획이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.159-162
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• 1999

All solid state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of Li/LiPON/V$_2$O$\sub$5/Pt. The vanadium oxide thin films were formed by d.c. reactive sputtering on Pt current collector. After deposition of vanadium oxide films, in-situ growths of lithium phosphorus oxynitride film were conducted by r.f. sputtering of Li$_3$PO$_4$ target in mixture gas of N$_2$ and O$_2$. The pure metal lithium film was deposited by thermal evaporation on thin film LiPON electrolyte. The cell capacity was about 45${\mu}$Ah/$\textrm{cm}^2$ $\mu\textrm{m}$ after 200 cycle. No appreciable degradation of the cell capacity could be observed after 50 cycles .

• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.467-471
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• 1999

BN films were grown on silicon (l00) substrate by magnetically enhanced activated reactive evaporation (ME-ARE) with pulsed DC power instead of r.f. for substrate biasing. The deposited films were analyzed using Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). FTIR results show that the intensity of absorption band of $sp^2$ bond of BN decreased and that of $sp^3$ bond of c-BN increased with increasing pulsed DC bias voltage applied to substrate. The initially grown layer at the interface was observed by TEM and considered to be of$ sp^2$-bonded BN. The cross-sectional and planar TEM micrographs show that the upper layer on the initial layer was the single phase c-BN. It is concluded that cubic boron nitride films could be synthesized by ME-ARE process with pulsed DC biasing.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.131-138
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• 1995

The broad beam ion sources of hot filament plasma type have widely used for modifications of materials and thin films, and the new type intensive current broad beam metal ion source including reactive gaseous ion beams is needed for preparing the hard coating films such as DLC, $\beta-C_3N_4$ Carbides, Nitrides, Borides etc. Now a electorn beam evaporation(EBE) broad beam metal ion source has been developed for this purpose in our lab. CN film has been formed by the EBE ion source. Study of the CN film shows that it has high hardness(HK=5800kgf/$\textrm {mm}^2$)and good adhesion. This method can widely changes the ratio of C/N atom's concentrations from 0.14 to 0.6 and has high coating rate. The low energy pocket ion source which was specially designed for surface texturing of medical silicon rubber was also developed. It has high efficiency and large uniform working zone. Both nature texturing and mesh masked texturing of silicon rubbers were performed. The biocompatibility was tested by culture of monocytes, and the results showed improved biocompatibility for the treated silicon rubbers. In addition, the TiB2 film synthesized by IBED is being studied recently in our lab. In this paper, the results which include the hardness, thickness of the films and the AES, XRD analysis as well as the tests of the oxidation of high temperature and erosion will be presented.

• Journal of the Korean Society of Groundwater Environment
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• v.5 no.4
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• pp.192-202
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• 1998

We investigated the geochemistry and environmental isotopes of granite-bedrock groundwater in the Yeongcheon diversion tunnel which is located about 300 m below the land surface. The hydrochemistry of groundwaters belongs to the Ca-HCO$_3$type, and is controlled by flow systems and water-rock interaction in the flow conduits (fractures). The deuterium and oxygen-18 data are clustered along the meteoric water line, indicating that the groundwater are commonly of meteoric water origin and are not affected by secondary isotope effects such as evaporation and isotope exchange. Tritium data show that the groundwaters were mostly recharged before pre-thermonuclear period and have been mixed with younger surface water flowing down rapidly into the tunnel along fractured zones. Based on the mass balance and reaction simulation approaches, using both the hydrochemistry of groundwater and the secondary mineralogy of fracture-filling materials, we have modeled the low-temperature hydrogeochemical evolution of groundwater in the area. The results of geochemical simulation show that the concentrations of Ca$\^$2＋/, Na$\^$＋/ and HCO$_3$and pH of waters increase progressively owing to the dissolution of reactive minerals in flow paths. The concentrations of Mg$\^$2＋/ and K$\^$＋/ frist increase with the dissolution, but later decrease when montmorillonite and illitic material are precipitated respectively. The continuous adding of reactive minerals, namely the progressively larger degrees of water/rock interaction, causes the formation of secondary minerals with the following sequence: first hematite, then gibbsite, then kaolinite, then montmorillonite, then illtic material, and finally microcline. During the simulation all the gibbsite is consumed, kaolinite precipitates and then the continuous reaction converts the kaolinite to montmorillonite and illitic material. The reaction simulation results agree well with the observed, water chemistry and secondary mineralogy, indicating the successful applicability of this simulation technique to delineate the complex hydrogeochemistry of bedrock groundwaters.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.133-134
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• 2009

Cold temperature development (CTD) of electron beam (EB) patterned resists and subsequent dry etching were investigated for fabrication of nano-patterned Niobium (Nb). Bulky Nb fims on GaAs substrates were deposited with EB evaporation. Line patterns on Nb cathode were fabricated by EB patterning and reactive ion etching (RIE). Size deviations of nano-sized line patterns from CAD designed patterns are dependent on the EB total exposure, but it can be improved by CTD of EB-exposed resist. Line patterns of 10 to 300 nm widths of EB-exposed resist patterns were drawn under various exposure conditions of $0.2{\mu}s$/dot (total 240,000 dot) with a constant current (50 pA). Compared with room temperature development (RTD), the CTD improves pattern resolution due to the suppression of backscattering effect. RIE with $CF_4$ was performed for formation of several nano-sized line patterns on Nb. Each EB-resist patterned samples with RTDs and CTDs were etched with two different $CF_4$ gas pressures of 5 Pa. Nb etching rate increases while GaAs (or ZEP) etching rate decreases as the chamber pressure increases. This different dependent of the etching rate on the $CF_4$ pressure between Nb and GaAs (or ZEP) has a significant meaning because selective etching of nano-sized Nb line patterns is possible without etching of the underlying active layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.617-620
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• 1999

In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.133-133
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• 2000

알루미늄 산화막은 알루미늄 전해 커패시터의 유전재료로 많이 사용되고 잇다. 기존의 생산 공정은 양극 산화법에 의한 산화막 형성으로 대부분이 이러한 습식 공정으로 생산되고 있다. 이 양극 산화법 방식은 장점도 있으나 폐기물이 많이 발생되는 단점이 있다. 본 연구에서는 폐기물의 발생을 획기적으로 줄일 수 있고 산화막 형성 효율을 높일 수 잇는 방식으로 activated reactive evaporation(ARE)을 도입하였다. 이 방식은 electron-beam에 의해 알루미늄을 증착시킬 때 plasma를 챔버 내에 발생시켜 활성 반응으로 알루미늄 원자가 산소와 반응하여 기판위에 Al2O3가 증착되는 것이다. 이 방식은 기계적 작동이 단순하고 증착이 되는 여러 변수들의 독립적 조절이 가능하므로 증착을 제어하기 쉽기 때문에 바로 산업 현장에서 적용될 수 있을 것으로 전망되어 본 연구에 도입하게 되었다. 기판은 유전용량을 증가시키기 위하여 알루미늄 원박을 에칭하였다. 이것은 기판으로 쓰일 알루미늄의 표면의 표면적을 증가시키기 위한 것으로, 알루미늄 전극의 표면적을 확대시키면 유전용량이 증가된다. 99.4%의 50$\mu\textrm{m}$와 60$\mu\textrm{m}$ 두께의 알루미늄 원박을 Ar 이온빔에 의해 1keV의 에너지로 20mA로 에칭을 하였다. 에칭 조건별로 에칭상태를 조사하였다. 에칭 후 표면 상태는 AFM으로 관찰하였다. 화성 실험은 진공 챔버 내의 진공을 약 10-7 torr까지 내린 후, 5$\times$10-5 torr까지 O2와 Ar을 주입시킨 다음 filament에서 열전자를 방출시키고 1.2 kV의 electrode에 의해 가속시켜 이들 기체들의 플라즈마를 발생시켰다. e-beam에서 증발된 알루미늄과 활성 반응을 이루어 기판에 Al2O3가 형성되었다. 여러 증착 변수들(O2와 Ar의 분압, 가속 전압, bias 전압 등)과 산화막의 상태 등을 XPS(X-ray photoelectron spectroscopy), AFM(Atomic Force Microscopy), XRD(X-Ray Diffraction), EXD로 조사하였다.

• Current Optics and Photonics
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• v.2 no.2
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• pp.125-133
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• 2018

We report an in-depth analysis of the design and fabrication of multilayer dielectric (MLD) diffraction gratings for spectral beam combining at a wavelength of 1055 nm. The design involves a near-Littrow grating and a modal analysis for high diffraction efficiency. A range of wavelengths, grating periods, and angles of incidence were examined for the near-Littrow grating, for the $0^{th}$ and $-1^{st}$ diffraction orders only. A modal method was then used to investigate the effect of the duty cycle on the effective indices of the grating modes, and the depth of the grating was determined for only the $-1^{st}$-order diffraction. The design parameters of the grating and the matching layer thickness between grating and MLD reflector were refined for high diffraction efficiency, using the finite-difference time-domain (FDTD) method. A high reflector was deposited by electron-beam evaporation, and a grating structure was fabricated by photolithography and reactive-ion etching. The diffraction efficiency and laser-induced damage threshold of the fabricated MLD diffraction gratings were measured, and the diffraction efficiency was compared with the design's value.