• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.910-913
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• 2001

Rapid Prototyping(RP) techniques have unique characteristics according to their working principle: the stair-stepped surface of a part due to layer-by-layer stacking, low building speed, and additional post-processing to improve surface roughness. A new RP process, Variable Lamination Manufacturing by using expandable polystyrene foam(VLM-S), has been developed to overcome the unfavorable characteristics. The objective of this study is to investigate the thermal characteristics and skeleton size effects as the hotwire cuts EPS foam sheet in order to improve dimensional accuracy of the parts, which is produced by VLM-S. Empirical and analytical approaches are performed to find the relationship between cutting speed and heat input, and the relationship between maximum available cutting speed and heat input. In addition, empirical approaches are carried out to find the relationship between cutting error and skeleton size, and cutting deviation and skeleton size. Based on these results, the optimal hotwire cutting condition and available minimum skeleton size are derived. The outcomes of this study are reflecting in the enhancement of VLM-S input data generation S/W.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• 전기학회논문지P
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• 제51권2호
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• 소성∙가공
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• 제16권2호
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• pp.113-119
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• 2007

Rapid mold heating has been recent issue to enable the injection molding of thin-walled parts or micro/nano structures. Induction heating is an efficient way to heat material by means of an electric current that is caused to flow through the material or its container by electromagnetic induction. It has various applications such as heat treatment, brazing, welding, melting, and mold heating. The present study covers a finite element analysis of the induction heating process which can rapidly raise mold temperature. To simulate the induction heating process, the electromagnetic field analysis and transient heat transfer analysis are required collectively. In this study, a coupled analysis connecting electromagnetic analysis with heat transfer simulation is carried out. The estimated temperature changes are compared with experimental measurements for various heating conditions.

• 한국식품영양학회지
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• 제11권4호
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• pp.402-408
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• 1998

A rapid processing method for fermented sauce of favorable flavor was investigated with low-usefulness marine resources. Hydrolyzed at optimal conditions for 6 hours usuing alcalase, and separated by molecularporous membrane. It's very effective for remove bitter taste at below M.W. 100 dalton, and effective at below M.W.500 dalton. Added 2% invert sugar in fermented sauce at below M.W.500 dalton, and thermal treatment at 100$^{\circ}C$ for 30 minutes were improved flavor. Chemical composition of fermented sauce using hair tail were 80.7% of moisture, 2.2% of carbohydrate, 1.8% of total nitrogen, 1.6% of amino nitrogen and pH was 6.5. The ratio of amino nitrogen in total nitrogen was 77.8%. And chemical composition of fermented sauce used gizzard shad, kangdale, pen shell and oyster were similar to fermented sauce used hair tail. Total nitrogen were above 1.8% and the ratio of amino nitrogen in total nitrogen was 77.7∼84.2% in all fermented sauce. Amino acid contents in fermented sauce used hair tail, gizzard shad, kangdale, pen shell and oyster were 4,318.1mg%, 4,681.3mg%, 3,156.2mg% and 4,175.0mg%, respectively. And the predominant free amino acid were glutamic acid, lysine and glycine in all fermented sauce.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.652-652
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• 2013

The conventional thermal chemical vapor deposition (CVD) setup for the graphene synthesis has mainly used convective heat transfer in order to heat a catalyst (e.g. Cu) up to $1,000^{\circ}C$. Although the conventional CVD has been so far widely accepted as the most appropriate candidate enabling mass-production of high-quality graphene, this method has stillremained under the standard for the commercialization largely due to the poor productivity arisen out of the required long processing time. Here, we introduced a fast and efficient synthetic route toward CVD-graphene. Unlike the conventional CVD using convection heat transfer, we adopted a CVD setup utilizing conduction heat transfer between Cu catalyst and rapid heating source. The high thermal conductive nature of Cu and the employed rapid heating source led to the remarkable reduction in processing timeas compared to the conventional convection based CVD (Fig. 1A), moreover, the synthesized graphene was turned out to have comparable quality to that synthesized by the conventional CVD (Fig. 1B). For the optimization of the conduction based CVD process, the parametric studies were thoroughly performed using through Raman spectroscopy and electrical sheet resistance measurement. Our approach is thought to be worth considerable in order to enhance productivity of the CVD graphene in the industry.

• 전자공학회논문지S
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• 제35S권6호
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• pp.55-65
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• 1998

산업현장에서는 반도체 공정의 산화막(oxidation)과 소둔(annealing) 공정에서 생산성을 향상시키기 위해 기존의 확산로(furnace)보다 RTP(rapid thermal processing) 시스템을 많이 사용하고 있다. 이러한 RTP 시스템의 주요 제어대상은 정확한 웨이퍼(wafer)의 온도조절과 웨이퍼 내의 균일성이다. 본 논문에서는 RTP 시스템의 온도변화와 같은 외란에 대한 견실안정성 문제를 해결하기 위해 하중 혼합감도함수를 이용하여 $H^{\infty}$ 제어기를 설계하고, 온도추적 및 웨이퍼 내의 균일성 등의 견실성능 개선은 루프쉐이핑 방법을 이용한다. 온도에 따른 선형화된 모델은 차수문제로 인하여 실 시스템 구현시 제약조건이 있으므로 한켈(Hankel), 자승근 균형(square-root balanced) 및 슈어 균형(Schur balanced) 방법을 사용하여 모델 차수축소를 하여 제어기를 설계한다. 원래의 모델과 축소된 모델에 대해 성능을 비교하고 시뮬레이션을 통하여 설계한 제어기의 견실안정성과 성능을 확인한다.

• Korean Chemical Engineering Research
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• 제46권3호
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• pp.486-491
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• 2008

상업용 12인치 급속가열장치(RTP)의 다변수 고급제어기를 개발하기 위하여 열전대가 부착된 웨이퍼를 대상으로 다변수 모델인식을 수행하였다. 웨이퍼에는 7개의 열전대가 설치되어 있으며 10개의 텅스텐-할로겐 램프 그룹으로 가열을 할 수 있다. 모델인식 실험과정에서 웨이퍼의 휨을 최소화하며 최종적으로 10-입력 7-출력의 균형 잡힌 상태공간 모델을 얻기 위한 모델인식방법을 제안하였다. 또한 넓은 온도영역에서 복사에 의한 비선형성을 가장 효과적으로 상쇄시킬 수 있는 출력변수 정의방법을 제안하였다. 600, 700, $800^{\circ}C$ 부근의 정상상태에서 실험을 수행하여 모델을 추정한 결과 상태의 차수는 80~100, 모델출력은 $y=T(K)^2$으로 결정하는 것이 바람직하며, 이때 one-step-ahead 온도예측 오차의 제곱평균은 0.125~0.135 K 정도로 나타났다.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1358-1366
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• 1988

독립적인 nitridation step이 포함된 급속 열처리 공정을 이용하여 125-180A 두께의 이중 절연박막을 단결정 실리콘 상에 형성하였다. HCl 가스의 첨가량과 공정시간의 변화에 따른 박막 특성의 변화를 고찰하였고, 이에 따른 박막의 전기적 특성을 관찰하였다. HCl 가스의 첨가에 의해 초기의 산화막 두께의 성장은 현저하게 나타났으나, nitridation 후의 박막두께의 변화는 10A 이하로 매우 저조하였다. 이중 절연박막의 항복전압은 HCl 가스의 첨가량에 비례하여 점차 증가하였고, 절연강도는 furnace나 독립적인 nitridation step이 포함되지 않은 급속 열처리 공정으로 형성한 같은 두께의 박막에 비해 높은 것으로 분석되었다.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1350-1357
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• 1988

독립적인 nitridation step이 포함된 급속 열처리 공정을 이용하여 125-180A 두께의 이중 절연박막을 단결정 실리콘 상에 형성하였다. HCl 가스의 첨가량과 공정시간의 변화에 따른 박막 특성의 변화를 고찰하였고, 이에 따른 박막의 전기적 특성을 관찰하였다. HCl 가스의 첨가에 의해 초기의 산화막 두께의 성장은 현저하게 나타났으나, nitridation 후의 박막두께의 변화는 10A 이하로 매우 저조하였다. 이중 절연박막의 항복전압은 HCl 가스의 첨가량에 비례하여 점차 증가하였고, 절연강도는 furnace나 독립적인 nitridation step이 포함되지 않은 급속 열처리 공정으로 형성한 같은 두께의 박막에 비해 높은 것으로 분석되었다.