• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.9-15
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• 2009

Compared to the flip-chip process using solder bumps, Cu pillar bump technology can accomplish much finer pitch without compromising stand-off height. Flip-chip process with Cu pillar bumps can also be utilized in radio-frequency packages where large gap between a chip and a substrate as well as fine pitch interconnection is required. In this study, Cu pillars with and without Sn caps were electrodeposited and flip-chip-bonded together to form the Cu-Sn-Cu sandwiched joints. Contact resistances and die shear forces of the Cu-Sn-Cu sandwiched joints were evaluated with variation of the height of the Sn cap electrodeposited on the Cu pillar bump. The Cu-Sn-Cu sandwiched joints, formed with Cu pillar bumps of $25-{\mu}m$ diameter and $20-{\mu}m$ height, exhibited the gap distance of $44{\mu}m$ between the chip and the substrate and the average contact resistance of $14\;m{\Omega}$/bump without depending on the Sn cap height between 10 to $25\;{\mu}m$.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• Proceedings of the Korean Information Science Society Conference
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• 2006.06c
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• pp.274-276
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• 2006

e-seal은 RFID(Radio Frequency IDentification) 기술을 사용하여 원격에서 자동으로 봉인상태를 확인할 수 있는 컨테이너 봉인 장치를 말한다. RFID의 특징상 반도체 칩에 기록된 정보를 제 삼자가 쉽게 판독 및 변조할 수 있다는 취약점으로 인하여 활성화되지 못하고 있는 실정이다. ISO에서는 RFID의 취약점을 보안하기 위한 표준작업(ISO 18185)을 진행 중이다. 이 중, ISO 18185-4는 e-seal에 저장되는 자료나 리더와의 RF통신에서 데이터 보호를 위한 표준이다. 이와 관련된 연구로는 인증 프로토콜과 ISO 18185-4를 위한 보고서로 제출된 보안 프로토콜이 있다. 제안된 e-seal 보안 프로토콜을 적용하기 위해서는 e-seal과 리더 간의 데이터를 암/복호화할 키가 필요하지만, 키 서버를 통해 전달받은 마스터 키를 데이터 암/복호화 키로 바로 사용하는 것은 보안 상의 문제점을 야기할 수 있기 때문에 PRF(Pseudo Random Function)을 이용하여 마스터 키로부터 MTK(Mutual Transient Key)를 유도하고, MTK를 암/복호화 키로 사용해야 한다. 기존의 PRF는 일방향 해시 함수(MD5, SHA 등)를 기반으로 하는 HMAC[2. 3]을 일반적으로 사용하였다. 그러나 일방향 해시 함수는 e-seal과 같은 제한된 자원을 갖는 환경에 적합하지 않다. 따라서, 본 논문에서는 e-seal 보안 프로토콜을 위한 효율적인 PRF을 제안한다. 기존의 일방향 해시 함수 기반이 아닌 블록 암호화 알고리즘을 기반으로 하는 MAC을 이용하여 PRF을 보다 효율적으로 구현하였고, 블록 암호화 알고리즘은 AES를 선택 합성체 $GF((2^4)^2)$을 통해 하드웨어 모듈을 최적화 하였다. AES를 기반으로 하는 MAC은 HMAC에 비해 면적 및 처리율에서 뛰어난 결과를 보여주었다.<0.01).이상의 연구 결과, cook-chill생산 시 녹차 추출물의 첨가가 미생물적 품질유지에 효과가 있다고 사료되는 바 본 연구결과를 기초로 급식소에서 음식 생산 시 녹차 추출물 및 천연 항균성 물질 첨가에 따른 미생물적 품질 및 관능적 품질검사를 통한 레시피 개발에 관한 지속적인 연구가 수행되어야 하겠다.다.다리다보니 점심시간을 활용할 수 없게 되는 문제점에 대한 재검토가 필요하다. 따라서 차후 학교급식의 안전성 확보를 위한 급식환경 개선의 일환으로 식당공간 확보 시 신속한 시간 내에 급식이 가능하도록 넓은 공간과 쾌적한 환경의 식당 조성에 대해 관심을 기울여야 할 것으로 사료된다. 이상 여부를 반영하는 임상증상의 빈도가 높은 청소년기 남녀 중학생의 경우 아침과 저녁의 결식빈도 및 외식과 간식의 빈도가 높았고, 아침식사의 질과 체형만족도가 낮은 것으로 나타나 청소년의 건강과 식습관 및 체형만족도가 상호 관련성이 높은 것으로 나타났다. 따라서 본 연구 결과는 성장기 청소년의 건강 유지를 위하여 바람직한 식습관의 중요성을 재인식할 수 있었으며, 올바른 식습관 확립을 위한 영양교육의 중요성이 재확인되었다.경제적일 것으로 판단된다.er 90 % of good relative dynamic modulus of elasticity due to fineness of formation caused by the increase of the unit powder content and the improvement of flowability, without regard to the replacement of crushed stone fines. Therefore, it can be said that the usage of crushed stone fines can control the strength of super flowing concrete by replacement and re

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.102-102
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• 2016

본 연구에서는 직류 전원(direct current; DC)을 이용한 스퍼터링과 고전력펄스 마그네트론 스퍼터링(high-power impulse magentron sputtering; HIPIMS)의 두 가지 방법과 빗각 증착을 적용하여 제조한 티타늄 질화물(TiN) 박막의 미세구조 변화가 물성에 미치는 영향을 확인하였다. TiN 박막은 99.5%의 Ti 타겟을 사용하고, Ar가스와 $N_2$ 분위기에서 스테인리스(SUS304)와 초경(cdmented carbide; WC-10wt.%Co) 기판위에 코팅하였다. 기판은 알코올과 아세톤으로 초음파 세척을 실시한 후 진공용기에 장착하고 기본 진공도인 ${\sim}2.0{\times}10^{-5}Torr$ 까지 진공배기를 실시하였다. 기판과 타겟 간의 거리는 DC 스퍼터링은 10 cm, HIPIMS 스퍼터링은 8.5 cm 이었다. 진공용기의 압력이 기본 진공도까지 배기되면 Ar 가스를 ${\sim}10^{-2}Torr$로 주입한 후 기판에 라디오 주파수(radio frequency; RF) 전원으로 약 -800 V의 전압을 인가하여 글로우 방전을 발생시키고 약 30 분간 청정을 실시하였다. 기판의 청정이 끝난 후 기본 진공도까지 배기한 후 Ar와 $N_2$ 가스를 ${\sim}10^{-3}Torr$로 주입하여 TiN 코팅을 실시하였다. 빗각의 크기는 $45^{\circ}$와 $-45^{\circ}$이며, TiN 박막의 총 두께는 약 $2.5{\sim}4.0{\mu}m$ 로 유지하였다. 공정조건에 따라 TiN 박막의 주상정은 형태와 기울어진 각도가 다른 것을 확인하였다. DC 스퍼터링으로 제조된 TiN 박막은 기판홀더에 약 -100 V 의 bias 전압을 인가하면 인가하지 않은 박막에 비해 치밀한 박막의 성장과 경도 값도 증가하는 사실을 확인하였다. 또한 빗각을 적용하고 bias 전압을 인가하지 않은 시편에서 박리현상이 일어났다. HIPIMS로 제조한 TiN 박막은 bias 전압을 인가한 박막과 인가하지 않은 박막의 주상정 형상과 경도 값에 큰 차이가 없었으며, 박막의 박리현상은 모든 시편에서 일어나지 않았다. DC 스퍼터링으로 제조한 TiN 박막은 bias 전압을 인가하지 않으면 색상이 노란색이 아닌 갈색으로 나타났으며, HIPIMS으로 제조한 박막은 bias 전압 인가 유무에 상관없이 노란색 색상을 나타냈다. 앞서 설명한 DC 스퍼터링과 HIPIMS의 공정조건에 따라 나타난 박막의 경도, 색상, 물성변화 차이는 DC 스퍼터링보다 높은 HIPIMS의 이온화율에서 기인한 것으로 생각된다. 본 연구결과를 이용하면 다양한 형태의 박막 구조 제어가 가능하고 이러한 미세구조 제어를 통해서 박막의 물성도 제어가 가능할 것으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.62-62
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• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.147-151
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• 2023

Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films. From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10^-11 Ω^-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10^-5 Ω^-1.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.6
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• pp.1210-1230
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• 1997

In this paper, we suggest an architecture of DS/CDMA tranceiver composed of one pilot channel used as reference and multiple traffic channels. The pilot channel-an unmodulated PN code-is used as the reference signal for synchronization of PN code and data demondulation. The coherent demodulation architecture is also exploited for the reverse link as well as for the forward link. Here are the characteristics of the suggested DS/CDMA system. First, we suggest an interlaced quadrature spreading(IQS) method. In this method, the PN coe for I-phase 1st channel is used for Q-phase 2nd channels and the PN code for Q-phase 1st channel is used for I-phase 2nd channel, and so on-which is quite different from the eisting spreading schemes of DS/CDMA systems, such as IS-95 digital CDMA cellular or W-CDMA for PCS. By doing IQS spreading, we can drastically reduce the zero crossing rate of the RF signals. Second, we introduce an adaptive threshold setting for the synchronization of PN code, an initial acquistion method that uses a single PN code generator and reduces the acquistion time by a half compared the existing ones, and exploit the state machines to reduce the reacquistion time Third, various kinds of functions, such as automatic frequency control(AFC), automatic level control(ALC), bit-error-rate(BER) estimator, and spectral shaping for reducing the adjacent channel interference, are introduced to improve the system performance. Fourth, we designed and implemented the DS/CDMA MODEM to be used for variable transmission rate applications-from 16Kbps to 1.024Mbps. We developed and confirmed the DS/CDMA MODEM architecture through mathematical analysis and various kind of simulations. The ASIC design was done using VHDL coding and synthesis. To cope with several different kinds of applications, we developed transmitter and receiver ASICs separately. While a single transmitter or receiver ASC contains three channels (one for the pilot and the others for the traffic channels), by combining several transmitter ASICs, we can expand the number of channels up to 64. The ASICs are now under use for implementing a line-of-sight (LOS) radio equipment.

• Korean Journal of Remote Sensing
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• v.27 no.2
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• pp.191-201
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• 2011

Soybean has widely grown for its edible bean which has numerous uses. Microwave remote sensing has a great potential over the conventional remote sensing with the visible and infrared spectra due to its all-weather day-and-night imaging capabilities. In this investigation, a ground-based polarimetric scatterometer operating at multiple frequencies was used to continuously monitor the crop conditions of a soybean field. Polarimetric backscatter data at L, C, and X-bands were acquired every 10 minutes on the microwave observations at various soybean stages. The polarimetric scatterometer consists of a vector network analyzer, a microwave switch, radio frequency cables, power unit and a personal computer. The polarimetric scatterometer components were installed inside an air-conditioned shelter to maintain constant temperature and humidity during the data acquisition period. The backscattering coefficients were calculated from the measured data at incidence angle $40^{\circ}$ and full polarization (HH, VV, HV, VH) by applying the radar equation. The soybean growth data such as leaf area index (LAI), plant height, fresh and dry weight, vegetation water content and pod weight were measured periodically throughout the growth season. We measured the temporal variations of backscattering coefficients of the soybean crop at L, C, and X-bands during a soybean growth period. In the three bands, VV-polarized backscattering coefficients were higher than HH-polarized backscattering coefficients until mid-June, and thereafter HH-polarized backscattering coefficients were higher than VV-, HV-polarized back scattering coefficients. However, the cross-over stage (HH > VV) was different for each frequency: DOY 200 for L-band and DOY 210 for both C and X-bands. The temporal trend of the backscattering coefficients for all bands agreed with the soybean growth data such as LAI, dry weight and plant height; i.e., increased until about DOY 271 and decreased afterward. We plotted the relationship between the backscattering coefficients with three bands and soybean growth parameters. The growth parameters were highly correlated with HH-polarization at L-band (over r=0.92).