• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.30-30
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• 2009

• Current Optics and Photonics
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• v.1 no.1
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• pp.60-64
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• 2017

We have considered optical nonlinearities of coupled quantum dots theoretically, where an exciton dipole-dipole interaction is mediated between the adjacent large and small quantum dots. For increasing a pump pulse area in resonance with the large quantum dot exciton the induced nonlinear refractive index of the small quantum dot exciton has been obtained. As the exciton dipole-dipole interaction depends on the relative orientation of two exciton dipoles, the optical nonlinearities for the directions parallel and perpendicular to the coupling axis of the two quantum dots are compared. The directional imbalance of optical nonlinearities in coupled quantum dots can be utilized for a polarization phase modulator by controlling a pump pulse area and propagation length.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1229-1232
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• 2008

We have successfully manufactured high-quality top-contact organic thin-film transistors using inkjet technologies with sub-femtoliter droplet volume. Silver fine lines were directly patterned by inkjet on pentacene channel layers. The minimum width of silver lines was $1{\mu}m$ with without the need for pre-patterning or surface pretreatments. The mobility was $0.3\;cm^2/Vs$.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.38-39
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• 2003

The GaAs semiconductor whispering gallery modes, produced in the peripheral Rayleigh band region of W／sub Rayleigh／ ＝ (${\Phi}$／2)( 1-n／sub eff／n), exhibit novel properties of ultralow thresholds open to nano-ampere regime associated with photonic quantum ring (PQR) production (Fig 1 (a)). The PQR phenomena are associated with a photonic field-driven phase transition of quantum well(QW)-to-quantum wire (QWR) and hence the photonic (non-de Broglie) quantum corral effects, on the Rayleigh cavity confined carriers in dynamic steady state, occur as schematically shown in Fig 1. (omitted)

• Electronics and Telecommunications Trends
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• v.34 no.1
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• pp.75-85
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• 2019

Quantum technology is undergoing a revolution. Theoretically, strange phenomena of quantum mechanics, such as superposition and entanglement, can enable high-performance computing, unconditionally secure communication, and high-precision sensing. Such theoretical possibilities have been examined in the last few decades. The goal now is to apply these quantum advantages to daily life. Europe, where quantum mechanics was born a 100 years ago, is struggling to be placed at the front of this quantum revolution. Thus, the European Commission has decided to invest 1 billion EUR over 10 years and has initiated the ramp-up phase with 20 projects in the fields of communication, simulation, sensing and metrology, computing, and fundamental science. This program, approved by the European Commission, is called the "Quantum Technology Flagship" program. Its first objective is to consolidate and expand European scientific leadership and excellence in quantum research. Its second objective is to kick-start a competitive European industry in quantum technology and develop future global industrial leaders. Its final objective is to make Europe a dynamic and attractive region for innovative and collaborative research and business in quantum technology. This program also trains next-generation quantum engineers to achieve a world-leading position in quantum technology. However, the most important principle of this program is to realize quantum technology and introduce it to the market. To this end, the program emphasizes that academic institutes and industries in Europe have to collaborate to research and develop quantum technology. They believe that without commercialization, no technology can be developed to its full potential. In this study, we review the strategy of the Quantum Europe Flagship program and the 20 projects of the ramp-up phase.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.516-520
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• 2014

Fractional quantum Hall Effect (FQSH) is one of most fundamental issues in condensed matter physics, and the Topological insulator becomes its prominent applications. This article reviews the general frameworks of these development and the physical properties. FQSH states and topological insulators are supposed to be topologically invariant under the minor change of geometrical shape or internal impurities. The phase transitions involved in this phenomena are known not to be explained in terms of symmetry breaking or Landau-Ginsburg theory. The new type of phase transitions related to topological invariants has acquired new name - topological phase transition. The intuitive concepts and the other area having same type of phase transitions are discussed.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.354-359
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• 2001

As the temperature of liquid under negative pressure approaches the absolute zero, the nucleation process due to thermal fluctuations hardly occurs. Instead of this mechanism, quantum fluctuations may lead the formation of nucleus for new phase in metastable state. In this study, the thermal as well as quantum nucleation bubble in liquid helium under negative pressure was investigated theoretically. The energy barrier against nucleation was estimated by molecular interaction due to the Londom dispersion force. It is shown that the phase transition from liquid to vapor in is possible due to the quantum tunneling below 0.2 K for Helium-4 and 0.1 K for Helium-3, at negative pressures close to the ideal tensile strength at which every liquid molecules become bubbles simultaneously.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.44 no.3
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• pp.45-50
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• 2007

We present a auto compensating quantum key distribution system based on optical fiber at 1550nm. In the quantum key transmission system, main control board and phase modulation driving board are fabricated for auto controlling quantum key distribution(QKD). We tested the single photon counts per dark counts for a single photon detector, quantum key distribution rate($R_{sift}$) and the quantum bit error rate (QBER). Quantum bit error rate of 3.5% in 25km QKD is obtained. This system is commercially available.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.27-32
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• 2007

We have investigated photoluminescence(PL) spectra of four $In_xGa_{1-x}N(x=0.15)/GaN$ multiple quantum well(MQW) structures with different well widths in order to study a phenomenon on crystal phase separation. The asymmetic behavior of PL spectra becomes stronger with increase of the well width from 1.5 nm to 6.0 nm, which indicates dual-peak nature. Analyzing the dual-peak fit PL spectra, we have observed that the intensity of low-energy shoulder peak rapidly becomes stronger, compared to that of high-energy peak corresponding to a transition in InGaN QW. It suggests that InGaN QW has two phases with tiny different In compositions, and that In-rich(InN-like) phase forms more and more relatively than stoichiometric InGaN(x=0.15) phase by the InN phase separation mechanism as the QW width increases. PL spectrum of 6.0-nm sample shows an additional peak at low-energy lesion(${\sim}2.0\;eV$) whose energy position is almost the same as a defect band of yellow luminescence frequently observed in GaN epilayers. It may be due to a defect resulted from In deficiency formed with development of the phase separation.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.1
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• pp.8-16
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• 2023

In this work, we report basic performance test results of a lab-scale three phase alternative current (AC) arc plasma torch system for plasma gas reforming applications. The suggested system primarily consists of three graphite electrodes inclined at 12.5° to the central axis, a 𝞥 150 mm cylindrical gas path and a three phase-60 Hz AC power supply. At air flow rate of 50 Lpm and arc currents of 100-175 A, test results revealed that plasma resistances were decreasing from 1.08 Ω to 0.53 Ω with the increase of plasma power from 9.3 kW to 13.8 kW, causing the decrease of power factor and increase of the line voltages. However, the injected air can be heated quickly up to the temperatures of >1,200℃ when injecting AC arc plasma powers of >10 kW.