• Title/Summary/Keyword: quantum groups

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Introduction to IEC Standardization for Superconducting Sensors and Detectors

  • Ohkubo, M.
    • Progress in Superconductivity
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    • v.14 no.2
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    • pp.106-109
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    • 2012
  • Superconducting sensors and detectors have been applied to many fields or beginning to enter the maturing stage. The applications spread over a wide range of fields such as radio telescope, medical examination, quantum information, contamination inspection, materials analysis, etc. For users of the superconducting devices as well as developers, we have to avoid confusion of naming, graphical circuit symbols, and measurement methods for device performance. We are trying to formulate international standards under the International Electrotechnical Commission - Technical Committee 90 (IEC-TC90), which is responsible for superconductivity. The sensors and detectors to be considered are divided into two groups: coherent sensors (SQUID, SIS mixers, etc.) and direct detectors (TES, STJ, MKID, SSPD, etc.).

Quantum Chemical Designing of Novel Organic Non-Linear Optical Compounds

  • Mahmood, Asif;Abdullah, Muhammad Imran;Nazar, Muhammad Faizan
    • Bulletin of the Korean Chemical Society
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    • v.35 no.5
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    • pp.1391-1396
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    • 2014
  • In the present study, ten metal free non-linear optical (NLO) compounds have been designed. These compounds have designed by structural modification of (2-cyano-5-(4-(phenyl(4-vinylphenyl)amino)phenyl) penta-2,4-dienoic acid (TC4). Density functional theory was used for structure optimization and determination of photo-physical properties. These compounds contain triphenylamine as electron-donor and cyanoacrylic acid as acceptor. Five ${\pi}$-spacers are used to connect the donor and acceptor. Two auxiliary donors are also used to assist the donor. Results of this study indicate that stronger electron-donating auxiliary groups and longer ${\pi}$-conjugation enhance NLO response. Major absorption peaks of all systems were in the visible region. These absorption peaks are associated with the ${\pi}-{\pi}^*$ transitions of the entire molecule. From calculations it is clear that all system will be good NLO material. The present calculations will provide new ways for experimentalists to synthesize high-performance NLO material.

Measurement and Simulation Study of RSFQ OR gate

  • Nam, Doo-Woo;Jung, Ku-Rak;Hong, Hee-Song;Joonhee Kang
    • Progress in Superconductivity and Cryogenics
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    • v.5 no.1
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    • pp.44-47
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    • 2003
  • There are several simulation programs in studying superconductor RSFQ (Rapid Single flux Quantum) electronic devices, which include WRspice, WinS, PSCAN, and JSIM. Even though different research groups use different simulation programs, it is not well known about which program gives the simulation results closer to the measurement values. In this work, we used both WRspice and WinS to simulate RSFQ OR gate and to compare the results from the different simulations. This comparison would help in deciding which program is better in the RSFQ circuit design. In the confluence buffer, which is the one of the main components of the DR gate, the measured bias margins were ${\times}23.2%$, while the margins from the simulations were ${\pm}35.56%$ from WRspice and it 53.1% from WinS. However, with the actual fabricated circuit parameters WRspice gave ${\pm}27%$. In WinS the circuit did not operate. We concluded that WRspice is more reliable.

TEM Stud of GaN Thick Film Crystals Grown by HVPE

  • 송세안;이성국
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.121-121
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    • 1999
  • Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

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Driving Force of Inverse Electron Demand Diels-Alder Reactions of Diphenyl Tetrazines

  • Kim, Yeil;Song, Suhwan;Sim, Eunji
    • Proceeding of EDISON Challenge
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    • 2017.03a
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    • pp.128-131
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    • 2017
  • We explore the inverse electron demand Diels-Alder reactions of tetrazines with various functional groups employing quantum calculations. In general, the rate of inverse electron demand Diels-Alder reaction depends on molecular orbital levels of electron donor and electron acceptor. Likewise, ${\pi}$ orbital of the dienophile and ${\pi}^*$ orbital of the diene is a key factor. In this work, we discuss the case where the energy of diene's ${\pi}^*$ molecular orbital is not the sole governing factor to determine the reaction rate, rather the rate shows strong correlation with the charge density of dienes.

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A New Diarylethene with Donor-acceptor Group for Reversible Photo-induced Electrochemical Switching

  • Kim, Eun-Kyoung;Kim, Mi-Young;Kim, Kyong-Tae
    • Bulletin of the Korean Chemical Society
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    • v.29 no.4
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    • pp.827-832
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    • 2008
  • A new diarylethene compound with donor and acceptor substituent was synthesized from 2,3-bis(2-methylbenzo[b]thiophene-3-yl)hexafluorocyclopentene (BTF) over 5 steps. The donor-acceptor structured BTF compound (TBTFE) showed spectral change to a longer wavelength through photochromism with a high cyclization quantum yield (0.56). The 3,4-ethylenedioxythiophene (T) and carboethoxy (E) groups directly connected to BTF unit promoted electrical change accompanied with the photoisomerization of the BTF unit. Photo-induced electrical switching was achieved from a photocell containing TBTFE doped polymer film, which showed reversible and stable current change over repeated cycles by the alternative UV/Vis irradiation, as estimated by the I-V plot.

Detection of Nitroaromatic Compounds with Functionalized Porous Silicon Using Quenching Photoluminescence

  • Cho, Sungdong
    • Journal of Integrative Natural Science
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    • v.3 no.4
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    • pp.202-205
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    • 2010
  • Nanocrystalline porous silicon surfaces have been used to detect nitroaromatic compounds in vapor phase. The mode of photoluminescence is emphasized as a sensing attitude or detection technique. Quenching of photoluminescence from nanocrystalline porous surfaces as a transduction mode is measured upon the exposure of nitroaromatic compounds. Reversible detection mode for nitroaromatics is, too, observed. To verify the detection afore-mentioned, photoluminescent freshly prepared porous silicons are functionalized with different groups. The mechanism of quenching of photoluminescence is attributed to the electron transfer behaviors of quantum-sized nano-crystallites in the porous silicon matrix to the analytes(nitroaromatics). An attempt has been done to prove that the surface-derivatized photoluminescent porous silicone surfaces can act as versatile substrates for sensing behaviors due to having a large surface area and highly sensitive transduction mode.

Application of Computational Mineralogy to Studies of Hydroxyls in Clay Minerals (전산광물학을 이용한 점토광물 내의 수산기 연구 가능성)

  • Chae, Jin-Ung;Kwon, Kideok D.
    • Journal of the Mineralogical Society of Korea
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    • v.27 no.4
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    • pp.271-281
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    • 2014
  • The physicochemical properties of clay minerals have been investigated at the atomistic to nano scale. The microscopic studies are often challenging to perform by using experimental approaches alone. In particular, hydroxyl groups of octahedral sheets in 2:1 clay minerals have been hypothesized to impact the sorption process of metal cations; however, X-ray based techniques alone, a common tool for mineral structure examination, cannot properly test the hypothesis. The current study has examined whether computational mineralogy techniques can be applied to examine the hydroxyl structures of clay minerals. Based on quantum-mechanics and molecular-mechanics computational methods, geometry optimizations were carried out for representative dioctahedral and trioctahedral phyllosilicate minerals. Both methods well reproduced the experimental lattice parameters; however, for structural distortion occurring in the tetrahedral or octahedral sheets, molecular mechanics showed significant deviations from experimental data. The orientation angle of the hydroxyl with respect to (001) basal plane is determined by the balance of repulsion between the hydroxyl proton and Si cations of tetrahedral sites; the quantum-mechanics method predicted $25-26^{\circ}$ for the angle, whereas the angle predicted by the molecular-mechanics method was much higher by $10^{\circ}$ (i.e., $35^{\circ}$). These results demonstrate that computational mineralogy techniques are a reliable tool for clay mineral studies and can be used to further elucidate the roles of hydroxyls in metal sorption process.

High Performance GaN-Based Light-Emitting Diodes by Increased Hole Concentration Via Graphene Oxide Sheets

  • Jeong, Hyun;Jeong, Seung Yol;Jeong, Hyun Joon;Park, Doo Jae;Kim, Yong Hwan;Kim, HyoJung;Lee, Geon-Woong;Jeong, Mun Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.244.1-244.1
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    • 2013
  • The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

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Physicochemical and Antioxidant Properties of Sponge Cake made using Barley Sprout and Green Tea (새싹보리와 녹차 스펀지케이크의 이화학적 및 항산화적 품질 특성)

  • Kim, Eunkyung
    • Journal of the Korean Society of Food Culture
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    • v.37 no.1
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    • pp.90-98
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    • 2022
  • This study investigated the physicochemical and antioxidant properties of sponge cakes made using different amounts (2 and 4%) of barley sprout powder (BSP) and green tea powder (GTP), respectively. The results showed that the baking loss rate of GS2 (2% green tea) and GS4 (4% green tea) was 12.39% and 11.96%, respectively in the green tea addition group, which was higher than that of the barley sprout group, but significantly lower than that of the control group at 13.34% (p<0.05). The specific volumes of the sponge cake containing barley sprout and green tea 2% and 4% were between 2.84-2.95 mL/g, which was significantly higher compared to the control group at 2.69 mL/g (p<0.05). The sugar content was significantly higher in the control group and the barley sprout addition group at 2.30°Brix (p<0.05). As for the volume index, the control group with the lowest value at 13.43 showed a significant difference compared to the addition groups. The volume index significantly decreased as the addition amount increased, measuring 14.07 in BS4 (4% BSP) compared to 14.87 of BS2 (2% BSP) in the barley sprout group (p<0.05). In cross-sectional photography, the color became darker than that of the control group as the quantum of additives increased. In terms of the DPPH and ABTS radical scavenging activity, the total phenol content, and total flavonoid content, the groups with the addition of barley sprout and green tea showed higher antioxidant activity than the control group (p<0.05).