• 제목/요약/키워드: quantum double

검색결과 121건 처리시간 0.029초

Efficient Deep-Blue Organic Light-emitting Diodes with Double-Emission Layers

  • Seo, Ji-Hoon;Park, Jung-Sun;Seo, Bo-Min;Lee, Kum-Hee;Park, Jung-Keun;Yoon, Seung-Soo;Kim, Young-Kwan
    • Journal of Information Display
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    • 제10권3호
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    • pp.107-110
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    • 2009
  • Efficient deep-blue organic light-emitting diodes were demonstrated using 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl doped in double-emission layers (D-EMLs). The D-EML system, which consists of 2-methyl-9,10-di(2-naphthyl)anthracene and 1,4-(dinaphthalen-2-yl)-naphthalene as blue hosts, was employed to broaden the recombination zone and to ensure the good confinement of the holes and electrons. The optimized device showed a peak current efficiency of 4.47 cd/A, a peak external quantum efficiency of 4.09%, and Commission Internationale de L'Eclairage coordinates of (0.16, 0.10).

Synthesis of Core-Shell Silica Nanoparticles with Hierarchically Bimodal Pore Structures

  • 윤석본;박대근;윤완수
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.467-467
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    • 2011
  • Reflecting the growing importance of nanomaterials in science and technology, controlling the porosity combined with well-defined structural properties has been an ever-demanding pursuit in the related fields of frontier researches. A number of reports have focused on the synthesis of various nanoporous materials so far and, recently, the nanomaterials with multimodal porosity are getting an emerging importance due to their improved material properties compared with the mono porous materials. However, most of those materials are obtained in bulk phases while the spherical nanoparticles are one of the most practical platforms in a great number of applications. Here, we report on the synthesis of the core-shell silica nanoparticles with double mesoporous shells (DMSs). The DMS nsnoparticles are spherical and monodispersive and have two different mesoporous shells, i.e., the bimodal porosity. It is the first example of the core-shell silica nanoparticles with the different mesopores coexisting in the individual nanoparticles. Furthermore, the carbon and silica hollow capsules were also fabricated via a serial replication process.

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양자화학 입문 과정 교육을 위한 강의 모델의 연구: 시각화와 차별화

  • 유영재;박희수;장보영;신석민
    • EDISON SW 활용 경진대회 논문집
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    • 제3회(2014년)
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    • pp.15-27
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    • 2014
  • 양자화학 (quantum chemistry)을 처음 접했을 때, 이전까지의 고전역학 (classical mechanics)에 익숙한 대다수의 학생들은 양자화학을 받아들이는 데 어려움을 겪는다. 모형계에 양자역학 (quantum mechanics)을 직접 적용하여 봄으로써 생소한 양자 개념에 대한 이해를 도울 수 있다. 본 논문에서는 양자동역학 (quantum dynamics)을 수치적으로 구현하는 계산 프로그램을 모형계에 적용하여 양자 개념을 설명할 수 있는 몇 가지 예를 보이고자 한다. 1 차원 시간의존 슈뢰딩거 방정식 (1-D time-dependent $Schr{\ddot{o}}dinger$ equation)의 해를 얻어 양자동역학을 구현하였으며, 그에 해당하는 고전동역학은 뉴턴 방정식 (Newton's equation)의 해로 얻어졌다. 조화 진동자 퍼텐셜 (harmonic oscillator potential), 모스 진동자 퍼텐셜 (Morse oscillator potential), 이중 우물 퍼텐셜 (double-well potential), 네모 퍼텐셜 장벽 (rectangular potential barrier), 그리고 에카트 퍼텐셜 (Eckart potential)에 대한 계산을 수행하였다. 두 가지 동역학을 비교하기 위하여 계산 결과의 시각화 (visualization)를 이용하고 동역학 특성의 차이를 비교하는 차별화 (differentiation)를 강조한다. 영점에너지 (zero-point energy), 위상어긋남 (dephasing), 터널링 (tunneling), 그리고 반사 (reflection) 현상과 같은 양자동역학의 특징을 고전동역학과 비교함으로써 직관적인 이해를 도울 수 있었다. 이러한 결과는 양자화학에 입문하는 학생들을 대상으로 쓰일 수 있는 효율적인 강의 모델을 제시할 것으로 기대한다.

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MOCVD법에 의한 (Ga, Al) As/GaAs 변형된 영지우물 레이저 다이오드의 제작 (The Fabrication of (Ga, Al) As/GaAs Modified Multi-Quantum Well Laser Diode by MOCVD)

  • 김정진;강명구;김용;엄경숙;민석기;오환술
    • 전자공학회논문지A
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    • 제29A권9호
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    • pp.36-45
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    • 1992
  • The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

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Density Functional Theory for Calculating the OH Stretching Frequency of Water Molecules

  • Jeon, Kiyoung;Yang, Mino
    • 대한화학회지
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    • 제60권6호
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    • pp.410-414
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    • 2016
  • The anharmonic frequency of a local OH stretching mode of a water monomer and dimer was calculated using various levels of density functional theory. The quantum chemical potential energy curves as a function of the OH bond distance were calculated, and they were fitted with the Morse potential function to analytically obtain the fundamental transition frequency. By comparing those values with the frequencies similarly calculated using an ab initio quantum chemical method, the coupled cluster theory including both single and double excitations with the perturbative inclusion of triple excitation in the complete basis limit, the accuracy of various density functional methods in the calculation of anharmonic vibration frequency of water molecules was assessed. For a water monomer, X3LYP and B3LYP methods give the best accuracy, whereas for a water dimer, B972, LCBLYP, ${\omega}B97X$, ${\omega}B97$ methods show the best performance.

Zn_{0.9}Cd_{0.1}/ZnSe 변형된 단일 양자우물구조의 열처리 효과 (Annealing Effects on $Zn_{0.9}Cd_{0.1}$/Se/ZnSe Strained Single Quantum Well)

  • 김동렬;배인호;손정식
    • 한국전기전자재료학회논문지
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    • 제13권6호
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    • pp.467-471
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    • 2000
  • The thermal annealing effect of $Zn_{0.9}Cd_{0.1}$ single quantum-well structures grown by molecular beam epitaxy is investigated. As the results of before and after rapid thermal annealed samples a red shift of E1-HH1 peak by Cd interdiffusion during thermal annealing of ZnCeSe/ZnSe sample was observed. In the case of annealed sample over $450^{\circ}C$ donor and acceptor impurities related peaks were observed which seems to be due to a diffusion of Ga and As from GaAs substrate. And also interdiffusion phenomena is idenified by the results of DCX measurements and which are consisten with the PL measurements.

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Improved Efficiency of Polymer LEDs using Electron Transporting Layer

  • Kim, Jong-Lae;Kim, Jai-Kyeong;Cho, Hyun-Nam;Kim, Dong-Young;Hong, Sung-Il;Kim, Chung-Yup
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.125-126
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    • 2000
  • We report the use of fluorene based copolymers containing quinoline(POF66, PIF66) and pyridine(PFPV) units as electron transporting polymers for multi-layered LEDs. Double-layer device structure combining PIF66 as electron-transporting layer with the emissive MEHPPV showed a maximum quantum efficiency of 0.03%, which is 30 fold increased compared with ITO/MEHPPV/Al single-layer device. PFPV layer increased the quantum efficiency up to 0.1% in the device structure of ITO/(P-3:PVK)/PFPV/Al. The ETL with the electron deficient moiety improved the LED performance by the characteristics of electron transporting as well as hole blocking between emissive layer and metal cathode.

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Theoretical Investigation of the Vibrational Relaxation of NO(${\upsilon}=1-7$) in Collisions with $O_{2}\;and\;N_{2}$

  • Jongbaik Ree
    • Bulletin of the Korean Chemical Society
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    • 제14권1호
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    • pp.47-52
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    • 1993
  • The vibrational relaxation rate constants of NO(v = 1-7) by $O_2\;and\;N_2$ have been calculated in the temperature range of 300-1000 K using the solution of the time-dependent Schrodinger equation. The calculated relaxation rate constants by $O_2$ increase monotonically with the vibrational energy level v, which is compatible with the experimental data, while those by $N_2$ are nearly independent of v in the range of $3.40 {\pm}1.60{\times}10_{-16} cm^3$/molecule-sec at 300 K. Those for NO(v) + $N_2$ are about 2-3 orders of magnitude smaller than those for NO(v) + $O_2$, because the latter is an exothermic processes while the former an endothermic. Relaxation processes can be interpreted by single-quantum V-V transition. The contributions of V-T/R transition and double-quantum V-V transition to the relaxation are negligible over the entire temperature range.

Rotational State Distribution of NO after Collisions with Fast Hydrogen Atom

  • 김유항
    • Bulletin of the Korean Chemical Society
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    • 제16권5호
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    • pp.436-438
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    • 1995
  • Based on the collisional time-correlation function approach a general analytical expression has been derived for the double differential cross-section with respect to the scattering angle and the final rotational energy, which can be applied to molecules with non-zero electronic orbital angular momentum after collision with fast hydrogen atoms. By integrating this expression another very simple expression, which gives the final rotational distribution as a function of the rotational quantum number, has also been derived. When this expression is applied to NO(2Π1/2, v'=1) and NO(2Π3/2, v'=1, 2, 3), it can reproduce the experimental rotational distribution after collision with fast H atom very well. The average rotational quantum number and average rotational energy using this expression are also in good agreement with those deduced from the experimental distributions.

레이저를 이용한 결정질 실리콘 태양전지의 Double Texturing 제조 및 특성 (Characteristics of Double Texturization by Laser and Reactive Ion Etching for Crystalline Silicon Solar Cell)

  • 권준영;한규민;최성진;송희은;유진수;유권종;김남수
    • 한국재료학회지
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    • 제20권12호
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    • pp.649-653
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    • 2010
  • In this paper, double texturization of multi crystalline silicon solar cells was studied with laser and reactive ion etching (RIE). In the case of multi crystalline silicon wafers, chemical etching has problems in producing a uniform surface texture. Thus various etching methods such as laser and dry texturization have been studied for multi crystalline silicon wafers. In this study, laser texturization with an Nd:$YVO_4$ green laser was performed first to get the proper hole spacing and $300{\mu}m$ was found to be the most proper value. Laser texturization on crystalline silicon wafers was followed by damage removal in acid solution and RIE to achieve double texturization. This study showed that double texturization on multi crystalline silicon wafers with laser firing and RIE resulted in lower reflectance, higher quantum yield and better efficiency than that process without RIE. However, RIE formed sharp structures on the silicon wafer surfaces, which resulted in 0.8% decrease of fill factor at solar cell characterization. While chemical etching makes it difficult to obtain a uniform surface texture for multi crystalline silicon solar cells, the process of double texturization with laser and RIE yields a uniform surface structure, diminished reflectance, and improved efficiency. This finding lays the foundation for the study of low-cost, high efficiency multi crystalline silicon solar cells.