• Bulletin of the Korean Chemical Society
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• 제29권6호
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• pp.1233-1242
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• 2008

The hydration effect on the intrinsic magnetism of natural salmon double-strand DNA was explored using electron magnetic resonance (EMR) spectroscopy and superconducting quantum interference device (SQUID) magnetic measurements. We learned from this study that the magnetic properties of DNA are roughly classified into two distinct groups depending on their water content: One group is of higher water content in the range of 2.6-24 water molecules per nucleotide (wpn), where all the EMR parameters and SQUID susceptibilities are dominated by spin species experiencing quasi one-dimensional diffusive motion and are independent of the water content. The other group is of lower water content in the range of 1.4-0.5 wpn. In this group, the magnetic properties are most probably dominated by cyclotron motion of spin species along the helical π -way, which is possible when the momentum scattering time (${\tau}_k$) is long enough not only to satisfy the cyclotron resonance condition (${\omega}_c{\tau}_k$ > 1) but also to induce a constructive interference between the neighboring double helices. The same effect is reflected in the S-shaped magnetization-magnetic field strength (M-H) curves superimposed with the linear background obtained by SQUID measurements, which leads to larger susceptibilities at 1000 G when compared with the values at 10,000 G. In particular, we propose that the spin-orbital coupling and Faraday's mutual inductive effect can be utilized to interpret the dimensional crossover of spin motions from quasi 1D in the hydrate state to 3D in the dry state of dsDNA.

• 전자공학회논문지D
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• 제36D권4호
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• pp.86-92
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• 1999

SiGe을 이용한 p형 전계 효과 트랜지스터의 전류 구동 능력 향상을 위하여 이중 δ도핑층을 이용한 MESFET을 설계하고 시뮬레이션을 통하여 전기적 특성의 개선을 확인하였다. 두 δ도핑층 사이의 도핑 농도가 낮은 분리층에 SiGe층을 위치시키면 양자 우물이 형성되어 δ도핑층에서 넘쳐 나온 정공이 Si 채널의 경우보다 더 많아져 전류 구동 능력이 크게 향상된다. δ도핑층 사이의 SiGe층의 두께는 0∼300Å, Ge 구성비는 0∼30%의 범위에서 변화시켜 SiGe 두께 200Å, Ge 구성비 30%일 때 이중 δ도핑 Si 채널 MESFET에 비해 최대 45% 이상 개선될 수 있음을 확인하였다.

• Journal of Radiation Protection and Research
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• 제42권1호
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• pp.16-20
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• 2017

Background: The design of deuteron accelerator neutron source facilities requires reliable yield estimation of gamma-rays as well as neutrons from deuteron-induced reactions. We have so foar measured systematically double-differential thick target neutron yields (DDTTNYs) for carbon, aluminum, titanium, copper, niobium, and SUS304 targets. In the neutron data analysis, the events of gamma-rays taken simultaneously were treated as backgrounds. In the present work, we have re-analyzed the experimental data for a thick carbon target with particular attention to gamma-ray events. Materials and Methods: Double-differential thick target gamma-ray yields from carbon irradiated by 5 and 9 MeV deuterons were measured using an NE213 liquid organic scintillator at the Kyushu University Tandem accelerator Laboratory. The gamma-ray energy spectra were obtained by an unfolding method using FORIST code. The response functions of the NE213 detector were calculated by EGS5 incorporated in PHITS code. Results and Discussion: The measured gamma-ray spectra show some pronounced peaks corresponding to gamma-ray transitions between discrete levels in residual nuclei, and the measured angular distributions are almost isotropic for both the incident energies. Conclusion: PHITS calculations using INCL, GEM, and EBITEM models reproduce the spectral shapes and the angular distributions generally well, although they underestimate the absolute gamma-ray yields by about 20%.

• Bulletin of the Korean Chemical Society
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• 제12권5호
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• pp.554-559
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• 1991

The photophysical and photochemical properties of khellin were compared with those of 8-methoxypsoralen (8-MOP). Quantum yields of fluorescence and triplet formation decreases as solvent polarity increases, which is opposite to 8-MOP, and photocycloadditivity of khellin to olefins is much lower than that of 8-MOP. Electron ejection from khellin by laser flash was not observed, but observed from 8-MOP. As models of 4',5'-monoadducts of khellin or 8-MOP with thymine base, khellin<>dimethylfumarate 4',5'-monoadduct (KDF) was also compared with 8-MOP<>thymidine 4',5'-monoadduct (F-2) in those properties to give some insight on the second-step biadduct formation resulting in cross-links of DNA duplex. KDF and F-2 were very similar to khellin and 8-MOP in photophysical properties, respectively. However, KDF did not form adducts with various olefins, and thus it is thought that 2,3-double bond of chromone moiety in khellin is hardly reactive in contrast with 3,4-double bond of coumarin moiety in 8-MOP. These results indicate that khellin is fairly photostable compound, a poor type Ⅰ photodynamic sensitizer and producer of ${O_2}^{-}$ which is some cause of phototoxic erythemal reactions and undesirable side effects. Therefore khellin is safer to use than 8-MOP in photochemotherapy of some skin diseases. Although khellin is much less reactive than 8-MOP, khellin must be also a monofunctional drug. Since khellin is, however, as effective as 8-MOP in photochemotherapy of some skin diseases, it is suggested that khellin may be different from 8-MOP in the action mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Journal of the Optical Society of Korea
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• 제1권2호
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• pp.116-119
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• 1997

Highly quantum efficient and multi-color emissible polymer light emitting devices have been realized utilizing poly (1-dodecyloxy-4-methyl-1, 3-phenylene)(2, 5"-terthienylene)(hereafter, mPTTh polymer) as an emitting layer and tris(8-hydroxyquinoline) aluminum (Alq3) as an electron transport layer. A single layer EL device of mPTTh polymer emits orange-colored light. EL efficiency increases as the thickness of Alq3 layer increases, but the emission color becomes visually broad when the Alq3 layer thickness is greater than 30nm since the relative peak intensity of green EL from Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer grows. EL color is changed from orange to greenish orange as the thickness of Alq3 layer increases. EL efficiency of the double layer device was greatly enhanced by 3000 times compared with that of a single layer device. Alq3 layer in device acts as a hole blocking electron transporting layer and an emitting layer as a function of the thickness of Alq3 layer.ayer.

• 한국광학회지
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• 제20권1호
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• pp.41-47
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• 2009

다중모드 간섭기를 이용한 반도체 이중사각형 링 공진기에서의 단일 파장 모드 발진특성을 관찰하였다. 실험에 사용된 공진기의 에피택시는 발진 중심파장이 $1.55{\mu}m$인 InGaAsP-InP 다중양자우물 구조를 활성층으로 사용하여 제작되었다. 공진기의 구조는 다중모드 간섭기를 결합기로 이용한 이중사각형 링 공진기이며 발진특성을 측정하였다. 여러 가지 구조 변수를 즉 공진기의 구조 및 크기, 다중모드 간섭기의 길이를 변화시키며 실험을 진행하였다. 실험 결과 다양한 크기와 구성에서 단일파장모드선택 특성이 잘 나타남을 확인할 수 있었다.

• 한국응용과학기술학회지
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• 제16권2호
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• pp.127-133
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• 1999

New electroluminescent materials base on anthracene chromophore, [9.10-bis(${\alpha}$-naph -thylethenyl) anthracene (${\alpha}$-BNA)] were newly synthesized. The anthracene derivatives with bulky substituent possessed high melting point and they gave stable amorphous films through vacuum - sublimation methods. Three types of electroluminescent devices were fabricated with double layer and triple layer structure : ITO/TPD/emission layer/MgAg, ITO/emission layer/ OXD-7 and ITO/ TPD/ emission layer/OXD-7/MgAg, respectively. In three types of devices with the emissive layer of ${\alpha}$-BNA, efficient orange electroluminescence was observed. In the triple layer device whit a emitting layer of 20 nm thickness , maximum luminance was about 10000 cd/ $m^2$ at an applied voltage of 10v and maximum external quantum efficiency was 1.0%.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.27-32
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• 1999

We developed a 40-channel superconducting quantum interference device (SQUID) system for neuromagnetic measurements. The main features of the system are use of double relaxation oscillation SQUID (DROS), and planar gradiometer for measuring tangential field components. The DROSS with high flux-to-voltage transfers enabled direct readout of the SQUID output by room-temperature electronics and simple flux-locked loop circuits could be used for SQUID operation. The pickup coil is an integrated first-order planar gradiometer with a baseline of 40 mm. The average noise of the 40 channels is around 1.2 fT/cm/${\sqrt{Hz}}$ at 100 Hz, corresponding to the field noise of 5 fT/${\sqrt{Hz}}$ at 100 Hz, operated inside a magnetically shielded room. The 40-Channel system was applied to measure auditory-evoked neuromagnetic fields.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.222-232
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• 2000

The relationship between carrier electron concentration(n) and atmosphere oxygen partial pressure($P_{O_2}$ for pure ZnO calculated by the mass-action law, well-known as n ${\propto}P^{-1/m}_{O_2}$ where m = 4 or 6 for the single or the double ionization of the native donor defects due to its nonstoichiometry, respectively, is found in competition with the calculation result on the basis that the total defect concentration is the sum of those of unionized and ionized defects. Definitively, it is found inconsistent with the calculation result by employing the Fermi-Dirac(FD) statistics for their ionization processes. By application of the FD statistics law to the ionization while assuming the defect formation is still ruled by the mass-action law, the calculation results shows the concentration is proportional to $P^{-1/2}_{O_2}$ whenever they ionize singly and/or doubly. Conclusively we would like to propose the new theoretical relation n ${\propto}P^{-1/m}_{O_2}$ because the ionization processes of donors in ZnO should be treated with the electronoccupation probability at localized quantum states in its forbidden band created by the donor defects, i.e. the FD statistics