• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.196.2-196.2
• /
• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.3
• /
• pp.151-155
• /
• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• Applied Chemistry for Engineering
• /
• v.32 no.2
• /
• pp.214-218
• /
• 2021

We investigated the optimal stacked structure from the perspective of process architecture (PA) through emission spectrum analysis according to the wavelength of quantum dot (QD)-organic light-emitting diodes (OLED). We confirmed that the blue-light leakage through the QD can be minimized by increasing the QD filling density above a critical value in the red QD (R-QD) layer. In addition, when the thickness of red-color filter (R-CF) at the upper part of the R-QD increased to more than 3 ㎛, the leakage of blue light through the R-CF was effectively blocked, and a very sharp emission spectrum in the red wavelength band could be obtained. According to these outstanding results, we expect that the development of QD-OLED displays with very excellent color gamut can be possibly realized.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.09a
• /
• pp.137-141
• /
• 2005

Quantum dot(QD) 메모리용 silicon nano-particle을 corona 방전방법에 의해 상온에서 대량 발생하는 방법을 개발하였다. Silicon QD는 SiH4 가스를 코로나 방전 영역을 통과시켜 발생시켰으며, 코로나 전압은 2.75kV를 사용하였다. SiH4 몰농도 $0.33{\times}10^{-7}\;mol/l$ 일 경우 발생된 QD입자 크기는 약 10nm이며 기하학적 표준편차(geometric standard deviation)는 1.31이었다. 이 조건에서 nonvolatile quantum dot semiconductor memory (NVQDM)를 제작하였으며, 이렇게 제작된 NVQDM flat band voltage는 1.5 volt였다.

• Journal of IKEEE
• /
• v.27 no.1
• /
• pp.30-37
• /
• 2023

To improve the efficiency and stability of colloidal quantum dot light-emitting diodes (QD-LEDs), it is essential to achieve charge balance within the QD emissive layer. Zinc oxide (ZnO) is widely used for constructing an electron transport layer in the state-of-the-art QD-LEDs, but spontaneous electron injection from ZnO often results in excessive electrons in QDs that significantly deteriorate the performance of QD-LEDs. In this study, we demonstrated the improved performance of QD-LEDs by modifying the electron injection property of ZnO with self-assembled monolayer (SAM)-treatment. As a result of improved charge balance, the external quantum efficiency and maximum luminance of QD-LEDs with SAM-treatment were improved by 25% and 200%, respectively, compared to the devices without SAM-treatment.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.347.2-347.2
• /
• 2016

Recently, in order to improve the performance of the colloidal quantum dot solar cells (CQDSCs), various efforts such as the modification of the cell architecture and surface treatment for quantum dot (QD) passivation have been made. Especially, the incorporation of halides into the QD matrix was reported to improve the performances significantly via passivating QD trap states that lower the life-time of the minority-carrier. In this work, we fabricated a lead sulfide (PbS) QD bilayer treated with different ligands and utilized it as a photoactive layer of the CQDSCs. The bottom and top PbS layer was treated using metal iodide ($MI_x$ and butanedithiol (BuDT), respectively. All the depositions and ligand treatments were carried out in air using layer-by-layer spin-coating process. The fabrication of the active layers as well as the n-type zinc oxide (ZnO) layer was successfully carried out on the bendable indium-tin-oxide (ITO)-coated polyethylene terephthalate (PET) substrate, which implies that this technique can be applied to the fabrication of flexible and/or wearable solar cells. The power conversion efficiency (PCE) of the CQDSCs with the architecture of $PET/ITO/ZnO/PbS-MI_x/PbS-BuDT/MoO_x/Ag$ reached 4.2 %, which is significantly larger than that of the cells with single QD (PbS-BuDT) layer.

• Journal of the Korean Vacuum Society
• /
• v.15 no.1
• /
• pp.81-88
• /
• 2006

Laterally self-aligned InGaAs/GaAs quantum-dots (QDs) have been fabricated by using a multilayer stacking technique. For the growth optimization, we vary the number of stacks and the growth temperature in the ranges of 1-15 periods and $500-540^{\circ}C$. respectively, Atomic force microscope (AFM) images and photoluminescence (PL) spectra reveal that the lateral alignment of QDs is enhanced in extended length by an increased stack period, but severely degrades into film-like wires above a critical growth temperature. The morphological and the photoluminescence characteristics of laterally self-aligned InGaAs QDs have been analyzed through mutual comparisons among four samples with different parameters. An anisotropic arrangement develops with increasing number of stacks, and high-temperature capping allows isolated QDs to be spontaneously organized into a one-dimensionally aligned chain-like shape over a few ${\mu}m$, Moreover, the migration time allowed by growth interruption plays an additional important role in the chain arrangement of QDs. The QD chains capped at high temperature exhibit blue shifts in the emission energy, which may be attributed to a slight outdiffusion of In from the InGaAs QDs.

• Macromolecular Research
• /
• v.17 no.12
• /
• pp.995-1002
• /
• 2009

Luminescent polynorbornene (PNB)/quantum dot (CdSe@ZnS; QD) composite nanorods and nanotubes were successfully prepared using anodic aluminum oxide (AAO) membranes of various pore sizes as templates. To protect QDs with high quantum yield from quenching during the phosphoric acid treatment used to remove the AAO templates, chemically stable and optically clear norbornene-maleic anhydride copolymers (P(NB-r-MA)) were employed as a capping agent for QDs. The amine-terminated QDs reacted with maleic anhydride moieties in P(NB-r-MA) to form PNB-grafted QDs. The chemical- and photo-stability of QDs encapsulated with PNB copolymers were investigated by photoluminescence (PL) spectroscopy. By varying the pore size of the AAO templates from 40 to 380 urn, PNB/QD composite nanorods or nanotubes were obtained with a good dispersion of QDs in the PNB matrix.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.191-191
• /
• 2012

InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.207-207
• /
• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.