• Korean Journal of Mathematics
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• v.26 no.3
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• pp.349-371
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• 2018

Some inequalities for quantum f-divergence of matrices are obtained. It is shown that for normalised convex functions it is nonnegative. Some upper bounds for quantum f-divergence in terms of variational and ${\chi}^2-distance$ are provided. Applications for some classes of divergence measures such as Umegaki and Tsallis relative entropies are also given.

• Journal of applied mathematics & informatics
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• v.39 no.5_6
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• pp.751-760
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• 2021

We study in this paper the right Rényi mean for a quantum divergence induced from the α - z Rényi relative entropy. Many properties including homogeneity, invariance under permutation, repetition and unitary congruence transformation, and determinantal inequality have been presented. Moreover, we give the identity of two right Rényi means with respect to tensor product.

• Current Optics and Photonics
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• v.3 no.6
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• pp.583-589
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• 2019

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I_th) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I_op) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

• ETRI Journal
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• v.43 no.2
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• pp.246-259
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• 2021

Traditional wisdom on how late industrialized countries follow the technology trajectories of preceding economies is in need of reformation as these countries have attained industrial leadership in a growing number of fields. However, current understandings about these countries' development of their emerging technologies have yet to investigate the divergence of idiosyncratic technology trajectories. The aim of this paper was to explore how their knowledge production strategies in emerging technology sectors are diverging. Specifically, this research examines the changing patterns of knowledge production in quantum technology in South Korea and China by developing a knowledge portfolio and knowledge strategic diagram. According to the knowledge portfolio, the relative literature position differs. In the knowledge strategic diagram, there are diverging patterns in the emerging keywords sector. This paper contributes to the literature by demonstrating the diverging strategies of late industrialized countries in their transition from catch-up to post-catch-up paradigms and provides policy implications for countries developing an idiosyncratic trajectory in emerging technology sectors.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.79-86
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• 1994

Gain-guided broad-area single quantum well separate confinement heterostructure diode lasers have been fabricated from structures grown by metal organic vapor phase epitaxy. The active layer of the epi-structure is InGaAs emitting 962-965nm and the guiding layer GaAs. The channel width is fixed to 150${\mu}$m and the cavity length varys within the range of 300~800${\mu}$m. For uncoated LD's, the output power of 0.7W has been obtaained at a pulsed current level of 2A, which results about 60% external quantum efficiency. The threshold current density is 200A/cm$^{2}$ for the cavity lengths of 800.mu.m LD's. The stain effect upon the transparent current density has been observed. The internal quantum efficiency is expected to be 88% and the internal loss to be 18$cm^{-1}$. The beam divergence has been measured to be 7$^{\circ}$to lateral and 40$^{\circ}$to transverse direction. finally, 1.2W continuous-wave output power has been obtained at a current level of 2A for AR/HR coated LD's die-bonded on Cu heat-sink and cooled by TEC.