• 한국연초학회지
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• 제33권1호
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• pp.21-27
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• 2011

Amadori compounds(1-deoxy-1-amino-2-ketoses) are important precursors of color, flavor and aroma produced in foods. Amadori compounds occur naturally in tobacco. The contribution of amadori compounds to smoke quality has been (of) interest because of their roles of the Maillard reaction in the leaf chemistry. The amounts of these compound in tobacco are affected by the processes of aging, drying and storage conditions. In this study, eight compounds were chemically synthesized because amadori compounds (have not been sold commercially these days.) were not available for obtaining commercially. The aim of this study was to develop the analytical method of amadori compounds in tobacco leaf by the liquid chromatography mass spectrometry using triple quadrupole analyzer(LC-MS/MS). This method was simple, rapid, selective and sensitive, and eight amadori compounds were simultaneously and quantitatively analyzed within 20 minutes. This method showed excellent accuracy and precision. Recovery rates of amadori compounds ranged from 86% to 102%, with relative standard deviation(RSD) ranged from 2.6% to 5.9%. This method was applied to analysis of amadori compounds contents of tobacco leaves in different varieties. Furthermore, it was expected that the method could be extended to the analysis of other amadori compounds.

• 전기학회논문지
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• 제56권2호
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.117-118
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• 2006

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20% and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a O2 addition of 2 sccm into the $BCl_3/(BCl_3+ Ar)$ of 20% plasma.