• 한국산학기술학회논문지
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• 제20권3호
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• pp.638-644
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• 2019

본 연구에서는 전산유체역학 해석을 이용하여 알루미늄 피라미드 트러스 심재 샌드위치의 열유동 특성을 분석하였다. 규칙적 다공질 금속인 피라미드 트러스 코어를 샌드위치 구조물에 채용할 경우 공기 매질이 자유롭게 유입, 유출될 수 있는 개방형 코어인 점을 고려하여 하중을 지지할 수 있는 구조성능과 함께 방열체로서 다기능성을 구현할 수 있는 구조가 된다. 따라서, 유입되는 공기의 속도변화, 설계변수인 트러스각에 따른 압력강하와 열전달 메카니즘을 확인하기 위해 ANSYS/Fluent를 이용하여 수치해석을 실시하였다. 해석모델에 사용된 샌드위치 패널은 알루미늄으로 이루어져 있으며, 샌드위치 패널의 위 면재와 아래 면재 사이에는 15개의 피라미드 트러스 유닛셀이 반복되고 있다. 폭 방향으로는 무한히 넓은 유닛셀을 모사하기 위해 대칭조건을 지정하였으며, 입구에는 균일한 속도분포를 경계조건으로 입력하였다. 해석결과 입구부와 첫 유닛셀까지의 구간에서 입구영향이 관찰되었으며, 입구영향을 배제하고 마찰계수와 누셀수를 분석하였다. 공기의 속도가 증가할수록 마찰계수는 감소하였으며, 누셀수는 증가하는 경향을 보인다. 한편, V=1m/s에서 5m/s에서의 마찰계수와 누셀수 변화가 확연하였으며, 이는 층류에서 난류로 유동패턴이 변하기 때문에 거시적으로 열전도보다 대류열전달의 비중이 커졌기 때문이다. 또한, 설계변수인 트러스각에 대해서는 의미가 있을 정도의 마찰계수와 누셀수의 변화는 관찰되지 않았다. 따라서, 트러스각이 강도, 강성 등 구조성능에 민감한 점을 감안하면 다기능성을 염두에 둔 알루미늄 피라미드트러스 심재 설계 시 설계변수의 변화는 구조성능에 더 민감할 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Bulletin of the Korean Chemical Society
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• 제26권4호
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• pp.594-598
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• 2005

Treatment of a solution of $CuCl_2$ in dimethyl phosphate (DMP) with DMSO under nitrogen atmosphere afforded to a light blue fluorescence powder. Slow evaporation of $H_2O$-DMSO solution of this powder resulted in blue-sky crystals of a new polymeric Cu(II) complex, with a unit cell composed of $Cu_2(DMP)_4$(DMSO), (1). The crystal and molecular structure of the complex acquired crystallographically. Compound (1) crystallizes in the monoclinic space group $P2_1$/n with a = 12.8920(11) $\AA$, b = 13.1966(11) $\AA$, c = 14.7926(13) $\AA$, $\alpha$ = 90$^{\circ}$, $\beta$ = 98.943(2)$^{\circ}$, $\gamma$ = 90$^{\circ}$, V= 2486.1(4) ${\AA}^3$, and Z = 4. A square pyramidal environment for the metal center was established by coordination of oxygen atoms of four bridging DMP ligands in the basal positions and binding a tri-centered oxygen atom of DMSO in the apical disposition of Cu(II). The sixth position was also affected by a weak interaction with the sulfur atom of another DMSO. The phosphorous atom in the bridging DMP was arranged in a deformed tetrahedron with (gg) conformation for methyl esters with $C_{2v}$ symmetry.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.323-323
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• 2010

Saw damage of crystalline silicon wafer is unavoidable factor. Usually, alkali treatment for removing the damage has been carried out as the saw damage removal (SDR) process for priming the alkali texture. It usually takes lots of time and energy to remove the sawed damages for solar grade crystalline silicon wafers We implemented two different mixed acidic solution treatments to obtain the improved surface structure of silicon wafer without much sacrifice of the silicon wafer thickness. At the first step, the silicon wafer was dipped into the mixed acidic solution of $HF:HNO_3$=1:2 ration for polished surface and at the second step, it was dipped into the diluted mixed acidic solution of $HF:HNO_3:H_2O$=7:3:10 ratio for porous structure. This double treatment to the silicon wafer brought lower reflectance (25% to 6%) and longer carrier lifetime ($0.15\;{\mu}s$ to $0.39\;{\mu}s$) comparing to the bare poly-crystalline silicon wafer. With optimizing the concentration ratio and the dilution ratio, we can not only effectively substitute the time consuming process of SDR to some extent but also skip plasma enhanced chemical vapor deposition (PECVD) process. Moreover, to conduct alkali texture for pyramidal structure on silicon wafer surface, we can use only nitric acid rich solution of the mixed acidic solution treatment instead of implementing SDR.

• 한국광학회지
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• 제20권2호
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• pp.128-133
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• 2009

본 연구에서는 광원을 내장하고 있는 포인팅 펜(pointing pen)의 출력광과 광 도파로 배열 사이의 광 결합을 이용하여 펜의 접촉여부와 접촉 위치를 검출하는 광학식 터치 패널 장치를 제안한다. 펜의 출력광과 광 도파로 배열 간의 광 결합을 최대화하고, 동시에 특정 광 도파로로 결합된 광속이 적은 손실로 전파할 수 있도록 하기 위해 광 도파로의 교차점 마다 부가적인 피라미드 구조를 삽입하였다. 광 도파로 단면의 크기가 $50{\times}50{\mu}m^2$인 경우 광선 추적법을 통해 결정된 피라미드의 최적 구조는 밑변의 폭, 높이, 경사각이 각각 $50{\mu}m$, $22.5{\mu}m$, $42^{\circ}$이었다. 이때 광 결합 효율은 97.8%이었으며, 전파손실은 평균적으로 0.3 dB/mm이었다. 그리고 펜의 기울어짐에 대한 허용 각도는 ${\pm}12^{\circ}$임을 확인하였다.

• 센서학회지
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• 제20권3호
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• pp.207-212
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• 2011

In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2617-2622
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• 2011

Two new Zn(II) complexes, $[Zn_2(dpa)_2(phen)_2(H_2O)_2]{\cdot}H_2O$ (1) (dpa = dephenate, phen = 1,10-phenanthroline) and [$Zn_2(dpa)_2(bpy)_2(H_2O)_2$] (2) (bpy = 2,2'-bipyridine) have been synthesized and characterized by elemental analysis, infrared spectroscopy, thermogravimetric analysis, and single crystal X-ray diffraction. The X-ray analysis reveals that the structures of 1 and 2 are dinuclear zinc(II) complexes bridged by dpa dianions, respectively. The zinc ions in 1 exhibit a distorted square pyramidal environments, while the zinc ions in 2 exhibit a trigonal bipyramid geometry. In each complex, the dpa ligand is coordinated to zinc ions as a bis-monodentate.

• 전자공학회논문지B
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• 제30B권6호
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• pp.35-48
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• 1993

In this paper, a hierarchical motion vector estimation algorithm using pyramidal structure is proposed. Using a smaller measurement window at each level of a pyramid than that of the conventional scheme, the proposed algorithm, based on the TSS(three step search), reduces the computational complexity greatly with its performance comparable to that of the TSS. By increasing the number of cnadidate motion vectors which are to be used as the initial search points for motion vector estimation at the next level, the performance improves further. Then the computational complexity of the proposed hierarchical algorithm depends on the number of candidate motion vectors, with its PSNR (peak signal to noise ratio) ranging between those of the TSS and the full search method. The simulation results with two different block sizes and various test sequences are given and its hardware implementation is also sketched.

• 한국표면공학회지
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• 제16권4호
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• pp.173-187
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• 1983

Zinc was electrodeposited at temperature from 20$^{\circ}C$ to 60$^{\circ}C$ over the ranges of the current density from 2 to 20 A/dm2 in acid chloride bath. The cathode overpotentials increased with increasing current density and decreasing tem-perature. The (10$.$3)-(10$.$2) preferred orientation developed at cathode overpotentials below about 450mV, the (10$.$3)(10$.$2)-(10$.$1) texture developed at overpotentials between 500mV and 950mV, and the (00$.$1) (10$.$3) texture developed at cathode overpotentials about 1000mV. The (00$.$1) (10$.$3) preferred orientation was also formed at the lower potentials between 400mV and 850mV at temperatures above 40$^{\circ}C$. The preferred orientations of the zinc deposits was discussed was discussed with both cathode overpo-tential and surface energy of deposit lattice planes. The pyramid type of structure with macrostep developed at low cathode overpotentials and the truncated pyramidal type developed at higher overpotenial.

• Bulletin of the Korean Chemical Society
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• 제22권12호
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• pp.1316-1322
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• 2001

Transition metal complexes of novel mono- and di-ferrocene-substituted porphyrins have been synthesized and characterized by structural and electrochemical methods. The X-ray structures of Mn(FPTTP)Cl and Mn(DFTTP)Cl showed the distorted square pyramidal coordination geometry with syn configuration of chloride and ferrocenyl substituents. The electrochemistry of ferrocene-substituted porphyrins and their metal complexes has been determined to elucidate the ${\pi}-conjugation$ effect of the porphyrin ring. The ferrocenyl group of H2FPTTP underwent a reversible one-electron transfer process at 0.30 V, indicating the good electron donating effect of the phorphyrin ring to the ferrocene substituent. The redox potential of the ferrocenyl subunit and porphyrin ring was affected by the central metal ions of the metalloporphyrins, that is, Zn(II) and Ni(II) made the oxidation of ferrocene much easier and Mn(III) made it harder. The ferrocene subunits of H2DFTTP interacted electrochemically with each other with peak splitting of 0.21 V. The strength of the electrochemical interactions between the two ferrocenyl substituents can be controlled by central metal ions of metalloporphyrins.