• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.638-644
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• 2019

In this study, the fluid flow and heat transfer characteristics within sandwich panels are investigated using computational fluid dynamics. Within the sandwich panels having periodic cellular cores, air can freely move inside the core section so that the structure is able to perform multi-functional roles such as simultaneous load bearing and heat dissipation. Thus, there needs to examine the thermal and flow analysis with respect to design variables and various conditions. In this regard, ANSYS Fluent was utilized to explore the flow and heat transfer within the pyramidal truss sandwich structures by varying the truss angle and inlet velocity. Without the entry effect in the first unitcell, the constant rate of pressure and the constant rate of Nusselt number was observed. As a result, it was demonstrated that Nusselt number increases and friction factor decreases as the inlet velocity increases. Moreover, the rate of Nusselt number and friction factor was appreciable in the range of V=1-5m/s due to the transition from laminar to turbulent flow. Regarding the effect of design variable, the variation of truss angle did not significantly influence the characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Bulletin of the Korean Chemical Society
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• v.26 no.4
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• pp.594-598
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• 2005

Treatment of a solution of $CuCl_2$ in dimethyl phosphate (DMP) with DMSO under nitrogen atmosphere afforded to a light blue fluorescence powder. Slow evaporation of $H_2O$-DMSO solution of this powder resulted in blue-sky crystals of a new polymeric Cu(II) complex, with a unit cell composed of $Cu_2(DMP)_4$(DMSO), (1). The crystal and molecular structure of the complex acquired crystallographically. Compound (1) crystallizes in the monoclinic space group $P2_1$/n with a = 12.8920(11) $\AA$, b = 13.1966(11) $\AA$, c = 14.7926(13) $\AA$, $\alpha$ = 90$^{\circ}$, $\beta$ = 98.943(2)$^{\circ}$, $\gamma$ = 90$^{\circ}$, V= 2486.1(4) ${\AA}^3$, and Z = 4. A square pyramidal environment for the metal center was established by coordination of oxygen atoms of four bridging DMP ligands in the basal positions and binding a tri-centered oxygen atom of DMSO in the apical disposition of Cu(II). The sixth position was also affected by a weak interaction with the sulfur atom of another DMSO. The phosphorous atom in the bridging DMP was arranged in a deformed tetrahedron with (gg) conformation for methyl esters with $C_{2v}$ symmetry.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.323-323
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• 2010

Saw damage of crystalline silicon wafer is unavoidable factor. Usually, alkali treatment for removing the damage has been carried out as the saw damage removal (SDR) process for priming the alkali texture. It usually takes lots of time and energy to remove the sawed damages for solar grade crystalline silicon wafers We implemented two different mixed acidic solution treatments to obtain the improved surface structure of silicon wafer without much sacrifice of the silicon wafer thickness. At the first step, the silicon wafer was dipped into the mixed acidic solution of $HF:HNO_3$=1:2 ration for polished surface and at the second step, it was dipped into the diluted mixed acidic solution of $HF:HNO_3:H_2O$=7:3:10 ratio for porous structure. This double treatment to the silicon wafer brought lower reflectance (25% to 6%) and longer carrier lifetime ($0.15\;{\mu}s$ to $0.39\;{\mu}s$) comparing to the bare poly-crystalline silicon wafer. With optimizing the concentration ratio and the dilution ratio, we can not only effectively substitute the time consuming process of SDR to some extent but also skip plasma enhanced chemical vapor deposition (PECVD) process. Moreover, to conduct alkali texture for pyramidal structure on silicon wafer surface, we can use only nitric acid rich solution of the mixed acidic solution treatment instead of implementing SDR.

• Korean Journal of Optics and Photonics
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• v.20 no.2
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• pp.128-133
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• 2009

In this paper, an optical touch panel device is newly proposed, with operating principle based on the optical coupling between a pointing pen having a built-in light source and perpendicularly crossed optical waveguide arrays. In order to enable an external light to couple into a waveguide core, the auxiliary pyramidal structures are introduced into all intersecting points located periodically along optical waveguides. The shape is optimized for minimizing the unwanted propagation loss due to the same structure by a ray tracing method. For the optical waveguide with the size of $50{\times}50{\mu}m^2$, the bottom width, height, and slope angle of the optimized pyramidal structure are $50{\mu}m$, $22.5{\mu}m$, and $42^{\circ}$, respectively. The optical coupling efficiency of about 97.8% and the average propagation loss of 0.3 dB/mm were achieved for the optimized touch panel. Finally, it is found from the tolerance analysis that tilting of the pen up to ${\pm}12^{\circ}$ can be allowed.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.207-212
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• 2011

In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2617-2622
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• 2011

Two new Zn(II) complexes, $[Zn_2(dpa)_2(phen)_2(H_2O)_2]{\cdot}H_2O$ (1) (dpa = dephenate, phen = 1,10-phenanthroline) and [$Zn_2(dpa)_2(bpy)_2(H_2O)_2$] (2) (bpy = 2,2'-bipyridine) have been synthesized and characterized by elemental analysis, infrared spectroscopy, thermogravimetric analysis, and single crystal X-ray diffraction. The X-ray analysis reveals that the structures of 1 and 2 are dinuclear zinc(II) complexes bridged by dpa dianions, respectively. The zinc ions in 1 exhibit a distorted square pyramidal environments, while the zinc ions in 2 exhibit a trigonal bipyramid geometry. In each complex, the dpa ligand is coordinated to zinc ions as a bis-monodentate.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.6
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• pp.35-48
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• 1993

In this paper, a hierarchical motion vector estimation algorithm using pyramidal structure is proposed. Using a smaller measurement window at each level of a pyramid than that of the conventional scheme, the proposed algorithm, based on the TSS(three step search), reduces the computational complexity greatly with its performance comparable to that of the TSS. By increasing the number of cnadidate motion vectors which are to be used as the initial search points for motion vector estimation at the next level, the performance improves further. Then the computational complexity of the proposed hierarchical algorithm depends on the number of candidate motion vectors, with its PSNR (peak signal to noise ratio) ranging between those of the TSS and the full search method. The simulation results with two different block sizes and various test sequences are given and its hardware implementation is also sketched.

• Journal of the Korean institute of surface engineering
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• v.16 no.4
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• pp.173-187
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• 1983

Zinc was electrodeposited at temperature from 20$^{\circ}C$ to 60$^{\circ}C$ over the ranges of the current density from 2 to 20 A/dm2 in acid chloride bath. The cathode overpotentials increased with increasing current density and decreasing tem-perature. The (10$.$3)-(10$.$2) preferred orientation developed at cathode overpotentials below about 450mV, the (10$.$3)(10$.$2)-(10$.$1) texture developed at overpotentials between 500mV and 950mV, and the (00$.$1) (10$.$3) texture developed at cathode overpotentials about 1000mV. The (00$.$1) (10$.$3) preferred orientation was also formed at the lower potentials between 400mV and 850mV at temperatures above 40$^{\circ}C$. The preferred orientations of the zinc deposits was discussed was discussed with both cathode overpo-tential and surface energy of deposit lattice planes. The pyramid type of structure with macrostep developed at low cathode overpotentials and the truncated pyramidal type developed at higher overpotenial.

• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1316-1322
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• 2001

Transition metal complexes of novel mono- and di-ferrocene-substituted porphyrins have been synthesized and characterized by structural and electrochemical methods. The X-ray structures of Mn(FPTTP)Cl and Mn(DFTTP)Cl showed the distorted square pyramidal coordination geometry with syn configuration of chloride and ferrocenyl substituents. The electrochemistry of ferrocene-substituted porphyrins and their metal complexes has been determined to elucidate the ${\pi}-conjugation$ effect of the porphyrin ring. The ferrocenyl group of H2FPTTP underwent a reversible one-electron transfer process at 0.30 V, indicating the good electron donating effect of the phorphyrin ring to the ferrocene substituent. The redox potential of the ferrocenyl subunit and porphyrin ring was affected by the central metal ions of the metalloporphyrins, that is, Zn(II) and Ni(II) made the oxidation of ferrocene much easier and Mn(III) made it harder. The ferrocene subunits of H2DFTTP interacted electrochemically with each other with peak splitting of 0.21 V. The strength of the electrochemical interactions between the two ferrocenyl substituents can be controlled by central metal ions of metalloporphyrins.