• Title/Summary/Keyword: pulsed-laser deposition

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The properties of$Y_1Ba_2Cu_3O_{7-x}$ superconducting thin films deposited by 'off-axis' pulsed laser deposition (Off-axis'레이저 기법에 의한 고온 초전도 $Y_1Ba_2Cu_3O_{7-x}$박막의 특성)

  • 문병무
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.285-290
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    • 1995
  • High quality $Y_{1}$Ba$_{2}$Cu$_{3}$$O_{7-x}$ thin films have been fabricated by pulsed Nd:YAG laser deposition using an unusual 'off-axis' target-substrate geometry. Various properties of superconducting $Y_{1}$Ba$_{2}$Cu$_{3}$$O_{7-x}$ thin films have been studied systematically as a function of oxygen pressure during the deposition, in both 'on-axis' and the unusual 'off-axis' target substrate geometries. In the 'off-axis' geometry, one can completely eliminate the so-called 'laser droplets' from the film surface and thus obtain smooth high quality films. It is found that films with optimum structural and electrical properties are obtained at a lower oxygen pressure range during the 'off-axis' deposition when compared with that required in the 'on-axis' deposition geometry.

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Light emission properties of ZnO thin films grown by pulsed laser deposition (펄스 레이저 증착법으로 제작한 ZnO 박막의 발광 특성)

  • 배상혁;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.539-542
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    • 2000
  • ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

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The Variation of the Characteristics of DLC Thin films by Pulsed Laser Deposition (레이저 증착변수에 의한 다이아몬드상 카본 박막 특성변화)

  • Sim, Gyeong-Seok;Lee, Sang-Ryeol
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.344-348
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    • 1999
  • Diamond like carbon(DLC) thin films possesed not only marvelous material characteristics such as large thermal conductivity, high hardness and being chemically inert, but also possesed negative electron affinity (NEA) properties. The NEA is an extremely desirable property of the material used in microelestronics and vacuum microelestronics device. DLC films were fabricated by pulsed laser deposition(PLD). Theeffect of the laser energy density and the substrate temperature on the properies of DLC films was investigated. The experiment was accomplished at temperatures in the range of room temperature to $600^{\circ}C$. The laser energy density was in the range of 6 $J/cm^2$ to 16 $J/cm^2$.

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Growth optimization of CeCoIn5 thin films via pulsed laser deposition

  • Rivasto, Elmeri;Kim, Jihyun;Tien, Le Minh;Kang, Ji-Hoon;Park, Sungmin;Choi, Woo Seok;Kang, Won Nam;Park, Tuson
    • Progress in Superconductivity and Cryogenics
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    • v.23 no.3
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    • pp.41-44
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    • 2021
  • We developed an optimization process of the pulsed laser deposition method to grow epitaxial CeCoIn5 thin films on MgF2 substrates. The effects of different deposition parameters on film growth were extensively studied by analyzing the measured X-ray diffraction patterns. All the deposited films contained small amounts of CeIn3 impurity phase and misoriented CeCoIn5, for which the c-axis of the unit cell is perpendicular to the normal vector of the substrate surface. The deposition temperature, target composition, laser energy density, and repetition rate were found effective in the formation of (00l)-oriented CeCoIn5 as well as the undesired phases such as CeIn3, misoriented CeCoIn5 along the (112) and (h00). Our results provide a set of deposition parameters that produce high-quality epitaxial CeCoIn5 thin films with sufficiently low amounts of impurity phases and can serve as a reference for future studies to optimize the deposition process further.