• Title/Summary/Keyword: pulsed source

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Evaluation of Discharge Characteristics Followed by the Development of Blumlein Pulsed Power Source (Blumlein 펄스파워 전원개발 및 방전특성 평가)

  • Han, Sang-Bo;Park, Sang-Hyun
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.10
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    • pp.99-105
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    • 2010
  • This paper discussed the theoretical simulation results for developing the blumlein pulsed power source and showed the circuit configuration and the discharge characteristics of the realistic manufactured pulsed power system. In the simulation, the output voltage characteristics at a load resistor showed the general impulse shape when the impedance of a single coaxial cable is matched with the that of a load resistor. In addition, it is confirmed that output values of the pulsed power can be easily controlled by the duplication of coaxial cables and the pulsed waveform showed the general impulse characteristics. Specifically, the inception discharge voltage in the gap distance of 5[mm] between needle and plane electrodes is about 20[kV] and which is lower than about 29[kV] in 9[mm] due to the difference of the reaching time of the inception voltage. Therefore, this paper showed that the output voltage of the blumlein pulsed power source can be easily controlled.

Position Estimation of Underwater Acoustic Source Using Pulsed CW Signal (Pulsed CW 신호를 사용하는 수중 음원의 위치 추정을 위한 시간지연차 추정법)

  • 최영근;손권;도경철;김기만
    • The Journal of the Acoustical Society of Korea
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    • v.23 no.7
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    • pp.514-520
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    • 2004
  • There are many techniques for underwater source localization. These are the methods based on TDOA (Time Difference Of Arrival) estimation. beamforming techniques and high resolution techniques, etc. In this Paper we estimate the underwater source position using MCPSP (Modified Cross Power Spectrum Phase) function that is calculated on frequency domain using sensors of small number. However, the performances of the localizing method based on MCPSP function drops greatly in the case of CW (Continuous Wave) signal . In this Paper we proposed the TDOA estimation method for pulsed CW signal. In the Proposed method we composed of new segment including a edge of ping. This segment was computed by short-time energy detection. With theoretical representation the performances of the proposed method were analyzed under various environment.

A Theoretical Study of Photothermal Pulsed Radiometry Method for the Thermal Diffusivity Measurement (재료의 열확산계수 결정을 위한 광열복사법의 이론적 연구)

  • Yook, Hyung-Kyu;Yoo, Jai-Suk;Kim, Hyun-Jung;Lee, Kwang-Jai
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.29 no.1 s.232
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    • pp.27-34
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    • 2005
  • We analyze in detail axially symmetric theoretical study for the photothermal pulsed radiometry of a cylindrical model. The theoretical solutions describe the transient infrared radiation from the sample heated by short-duration pulsed heating. In the conventional transmission radiometry technique, the excitation source and the detector are on opposite sides of the sample, otherwise in the new single ended radiometry technique, the excitation source and the detector are on same sides of the sample. The analytical solution described for photothermal radiometry in this study would not need to cut or polish samples to measure the thermal diffusivity. Therefore the radial area and axial thickness of samples are not limited. The effects of excitation pulse duration and the area of heat source are discussed.

Modulated Pulsed Power를 이용한 Cr 박막의 증착과 특성 분석

  • Min, Gwan-Sik;Song, Je-Beom;Yun, Ju-Yeong;Sin, Yong-Hyeon;Cha, Deok-Jun;Hwang, Yun-Seok;Heo, Yun-Seong;Kim, Jin-Tae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.123.1-123.1
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    • 2013
  • 반도체 공정에서는 사용하는 power source의 형태는 pulse-DC이다. Pulse-DC는 DC power에 비해 증착율이 좋고, 박막의 특성도 우수한 특성을 가진다. 이러한 장점에도 불구하고 pulse-DC나 DC power는 플라즈마 내 이온이 가지는 에너지가 크고, 이온화율도 낮다. 이러한 단점을 극복하기 위해 등장한 power source가 modulated pulsed power이다. Modulated pulsed power는 이온이 가지는 에너지가 DC power의 1/2 수준이며, 이온화율은 4배 이상 높은 특징을 가진다. 본 연구에서는 modulated pulsed power를 사용하여 Cr 박막을 Si wafer 위에 증착하여 박막의 특성을 관찰하였다. 연구에 사용된 power는 5 kV (800 V, 12.5 A), 20~120 KHz, 3 step까지 설정이 가능한 장비이며, base pressure $1.5{\times}10^{-6}$ Torr에서 실험이 진행되었고, 실험에 사용된 불활성 기체는 Ar을 사용하였다.

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A Simulation Study of a Chopping System for Extracting a Pulsed Beam from a Cyclotron

  • Kim, Jae-Hong;Hong, Seong-Gwang;Kim, Mi-Jeong;Kim, Seong-Jun;Kim, Myeong-Jin;Kim, Do-Gyun;Yun, Jong-Cheol;Kim, Jong-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.537-537
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    • 2013
  • Cyclotron-accelerated ion beams are used for various researches, such as nuclear physics, nuclear chemistry, biotechnology, and material sciences including radio-isotope production. Recently considerable applications are asked to the cyclotron development undertaken to meet user requirements of various ions'energies, intensities, and their pulsed beams. For instance, a cocktail beam acceleration technique rapidly changing the ion species and energies was developed to irradiating integrated circuit chips. Also a chopping system in a cyclotron injection line is considered for producing a pulsed ion beam with a relatively long period compared with that generated by the resonance frequency. For the research in neutron time-of-flight measurement, a single-pulsed beam with a repetition interval of the order of mili-seconds or longer is necessary to have a good resolution and to remove background events. In this paper a feasibility of pulsed beam with an external ion source is simulated by adopting a combination system of a chopper accompanying with a bunching stage in the injection line and an additional chopper after the exit of the cyclotron in order to produce beam pulses with a range of $1{\mu}s{\sim}1ms$ periods from a resonance RF cycle. The pulseperiod will be adjusted by chopping the number of beam bunches from the injected pulses in the injection line. However, the longer pulses will have reduced number of beam pulses and sacrificed beam currents. Because the beam users need an intense single pulsed beam, a careful tuning of the acceleration phase and a high-intense external ion source are necessary to achieve an intense single-pulsed beam from the cyclotron. It is essential to strictly match the acceleration phase of injected beams in the central region of the cyclotron to improve its efficiency. An effect of space charge at each pulse from the ion source will be also considered.

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Two-dimensional Numerical Simulation of a Pulsed Heat Source High Temperature Inert Gas Plasma MHD Electrical Power Generator

  • Matsumoto, Masaharu;Murakami, Tomoyuki;Okuno, Yoshihiro
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2008.03a
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    • pp.589-596
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    • 2008
  • Performance of a pulsed heat source high temperature inert gas plasma MHD electrical power generator, which can be one of the candidates of space-based laser-to-electrical power converter, is examined by a time dependent two dimensional numerical simulation. In the present MHD generator, the inert gas is assumed to be ideally heated to about $10^4K$ pulsed-likely within short time(${\sim}1{\mu}s$) in a stagnant energy input volume, and the energy of high temperature inert gas is converted to the electricity with the medium of pure inert gas plasma without seeding. The numerical simulation results show that an enthalpy extraction ratio(=electrical output energy/pulsed heat energy) of several tens of % can be achieved, which is the same level as the conventional seeded non-equilibrium plasma MHD generator. Although there still exist many phenomena to be clarified and many problems to be overcome in order to realize the system, the pulsed heat source high temperature inert gas MHD generator is surely worth examining in more detail.

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A High Voltage Poorer Supply for Electrostatic Precipitator with Superimposing Voltage Pulse on DC Source (펄스 및 직류 중첩형 전기집진기용 고전압 전원장치 개발 연구)

  • Kim, Jong-Soo;Rim, Geun-Hie;Lee, Sung-Jin;Kim, Seung-Min;Cho, Chang-Ho
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.50 no.12
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    • pp.624-630
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    • 2001
  • The trend of the regulations on environmental issues are getting tight. Responding to this trend new technologies such as moving electrodes, wide pitch and pulsed power supply are also introduced in the electrostatic precipitator(EP) systems. The introduction of wide pitch and moving electrodes enhances the system performance of the EPs by improving air-flow and by improving the ash reentrainment on rapping. The power supplies for the EPs developed up to date include thyristor-based dc or intermittent type, SMPS(switching mode power supply) type and the pulsed-power supply type. The use of the pulsed ones is known to improve dust-collecting efficiency of high resistivity ash and reduces back corona occurrence in the collecting plate. There are two kinds of pulsed-power supplies; one with pulsed transformers and the other with direct dc switching devices. The latter uses rotary spark gap switches or semiconductor switches. Both have the merits and demerits: the spark gap switches are simple and robust but has short life time, hence, high maintenance cost, whereas the semiconductor switches have long life time but are costly. In this study, A high voltage power supply with superimposing voltage pulse on dc source was developed for EPs. This study describes circuit topology, operating principle of the scheme, and analysis of experimental results on Dong-Hae Power Plant. The pulsed power supply consists of a variable dc power supply with ratings of 60kV, 800mA and pulse generator which is made of high voltage thyristor-diode switch strings, an LC resonant tank and a blocking inductor. The pulse generator generates variable pulse-voltage up to 70kV using a high frequency resonant inverter with a variable dc source. Two prototypes were built and tested on 250MW DongHae power plant to verify the possibility of the commercial use and the normal operation in the transient states.

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Neutronic and thermohydraulic blanket analysis for hybrid fusion-fission reactor during operation

  • Sergey V. Bedenko ;Igor O. Lutsik;Vadim V. Prikhodko ;Anton A. Matyushin ;Sergey D. Polozkov ;Vladimir M. Shmakov ;Dmitry G. Modestov ;Hector Rene Vega-Carrillo
    • Nuclear Engineering and Technology
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    • v.55 no.7
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    • pp.2678-2686
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    • 2023
  • This work demonstrates the results of full-scale numerical experiments of a hybrid thorium-containing fuel plant operating in a state close to critical due to a controlled source of D-T neutrons. The proposed facility represented a level of generated power (~10-100 MWt) in a small pilot. In this work, the simulation of the D-T neutron plasma source operation in conjunction with the facility blanket was performed. The fission of fuel nuclei and the formation of spatial-energy release were studied in this simulation, in pulsed and stationary modes of the facility operation. The optimization results of neutronic and fluid dynamics studies to level the emerging offsets of the radial energy formed in the volume of the facility multiplying part due to the pulsed operation of the D-T neutron plasma source were presented. The results will be useful in improving the power control-based subcriticality monitoring method in coupled systems of the "pulsed neutron source-subcritical fuel assembly" type.

Silicon On Insulator (SOI) Wafer Development using Plasma Source Ion Implantation (PSII) Technology (플라즈마 이온주입 기술을 이용한 SOI 웨이퍼 제조)

  • Jung, Seung-Jin;Lee, Sung-Bae;Han, Seung-Hee;Lim, Sang-Ho
    • Korean Journal of Metals and Materials
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    • v.46 no.1
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    • pp.39-43
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    • 2008
  • PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.