• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1576-1577
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• 2006

22kV, 60kA급 커패시터 펄스전원장치의 스위치로 신뢰성과 제어성이 우수한 반도체 스위치인 싸이리스터(Thyristor)를 사용하였다. 싸이리스터 규격의 적합성을 검토하였으며 펄스파워발생환경에서 신뢰성을 높이기 위한 대책을 고려하였다. 실험결과와 모사실험 결과를 비교하였다.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.48-50
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• 2018

본 논문은 광물 탐사용 25kW 양극성 펄스전원장치에 대해 기술한다. 고효율 LCC 공진형 컨버터와 풀 브리지 기반 바이폴라 펄스 스위칭부로 구성된 500V, 12.5A 단위 모듈을 설계한다. LCC 공진형 컨버터는 도전 손실을 줄이기 위해 사다리꼴 모양의 공진 전류를 갖도록 하고, 높은 전력 밀도를 달성하기 위해 변압기의 누설 인덕턴스를 공진 인덕턴스로 활용한다. 또한, 반복적인 짧은 펄스 기반으로 설계된 게이트 구동 회로는 DC에서 8kHz의 주파수 범위를 동작시키고 게이트 변압기의 사이즈를 줄이기 위해 제안된다. 개발된 양극성 펄스전원장치는 4개의 모듈이 직병렬로 결선되어 부하 조건에 따라 Grounded dipole mode (2kV, 12.5A) 또는 Loop mode (500V, 50A)로 동작한다. 네 모듈의 출력 전압 밸런싱을 충족시키기 위해 LCC 공진형 컨버터의 변압기에 보상권선이 감긴다. 본 논문에서는 양극성 펄스전원 장치의 상세설계에 대해 기술하고, 시뮬레이션 및 실험 결과를 통해 이를 검증한다.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.176-180
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• 2002

During the last two decades the laser beam has progressed from a sophisticated laboratory apparatus to an adaptable and viable industrial tool. Especially, in its welding mode, the laser offers high travel speed, low distortion, and narrow fusion and heat-affected zones (HAZ). The principal obstacle to selection of a laser processing method in production is its relatively high equipment cost and the natural unwillingness of production supervision to try something new until it is thoroughly proven. The major objective of this work is focused on the combined features of gas tungsten arc and a low-power cold laser beam. Although high-power laser beams have been combined with the plasma from a gas tungsten arc (GTA) torch for use in welding as early as 1980, recent work at the Ohio State University has employed a low power laser beam to initiate, direct, and concentrate a gas tungsten arcs. In this work, the laser beam from a 7 watts carbon monoxide laser was combined with electrical discharges from a short-pulsed capacitive discharge GTA welding power supply. When the low power CO laser beam passes through a special composition shielding gas, the CO molecules in the gas absorbs the radiation, and ionizes through a process known as non-equilibrium, vibration-vibration pumping. The resulting laser-induced plasma (LIP) was positioned between various configurations of electrodes. The high-voltage impulse applied to the electrodes forced rapid electrical breakdown between the electrodes. Electrical discharges between tungsten electrodes and aluminum sheet specimens followed the ionized path provided by LIP. The result was well focused melted spots.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2098-2100
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• 2000

We propose pulsed $CO_2$ laser below 30W by the AC(60Hz) switching control of leakage transformer primary which has some advantage of cost and size compared to a typical pulsed power supply. Pulse repetition rate is adjusted from 5Hz to 60Hz to control laser output. In this laser, a low voltage open loop control for high voltage discharge circuit is employed to avoid the HV sampling or switching and high voltage leakage transformer is used to convert rectified low voltage pulse to high voltage one. A ZCS(Zero Cross Switch) circuit and a PIC one-chip microprocessor are used to control gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to the frequency of AC line and a high leakage inductance. The maximum laser output was obtained about 23W at pulse repetition rate of 60Hz, total gas mixture of $CO_{2}/N_{2}$/He = 1/9/15, SCR gate trigger angle 90$^{\circ}$, and total pressure of 18Torr.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2201-2203
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• 1999

In this study, we have designed and manufactured not a present elliptic cavity but a circular cavity and we have experimented the operational characteristics. As a result, we obtained the maximum efficiency of 2.1 %. It didn't have any difference compared with elliptic cavity. A circular cavity is much more compact, so far easier to be manufactured than a elliptic cavity. And it can be made at a low cost. At the input energy, parameter $\alpha$, input voltage, and pulse width were in the same condition, we have decided to the optimization of the mesh number of a parallel-mesh circuit which was connected with main power supply.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1631-1633
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• 2001

In manufacturing processes, various and suitable pulse shapes are required for the purpose of material processing and the pulseshape is regarded as a dominant factor due to the specific property of processing materials. Therefore, in this study, a variable pulse width, high duty cycle Pulse Forming Network(PFN) is constructed by time sequently. The power supply for this experiment consists of three switching circuits. The PFN elements operate at low voltage and drive the primary of HV leakage transformer. The secondary of the transformer has a full-wave rectifier, which passes the pulse energy to the load in a continuous sequence of properly phased and nested increments. We investigated laser pulse width as various delay time among three switching circuit. As a result, we tan obtain various laser pulse width from about 4ms to 10ms. The maximum laser pulse width obtained at this experiment was about 10ms at delay time of 4ms among each switching circuit.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.244.2-244.2
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• 2014

금속, 플라스틱, 유리 등의 재료 표면에 다양한 색상을 표현하기 위해 일반적으로 습식 도금을 많이 적용하고 있다. 하지만 습식 도금은 공정 수가 많을 뿐만 아니라 위험물질 및 오염물질을 많이 사용하기 때문에 산업사고, 환경오염 등을 야기 시킨다. 따라서 본 연구에서는 친환경적 방법인 물리적기상증착(PVD ; Physical Vapor Deposition) 방식의 한 종류인 스퍼터링(Sputtering)으로 색상을 구현하였다. PVD 방식의 증착은 습식 도금 방식에 비해 친환경적이며, 전처리에서 후처리까지 한 공정으로 가능하다는 점이다. 스퍼터링은 PVD의 다른 방식인 E-beam 방식에 비해 대량생산을 할 수 있다는 장점이 있다. 양산형 스퍼터링 장비(${\Phi}1200mm{\times}H1400mm$)로 실험을 진행하였으며, 증착 물질은 Ti, Al, Cr 을 사용하였고, 반응성 가스(Reactive Gas) 로는 N2, C2H2 가스를 사용하였다. 전처리는 LIS (Linear Ion Source)로 식각(Etching) 하였고, 펄스직류전원공급장치(Pulsed DC Power Supply)를 사용하여 증착 하였으며, 증착시 기판에 bias (-100 V)를 인가 하였다. 그 결과 회색계열, 갈색계열 등 여러가지 색을 구현할 수 있었으며, 증착된 박막의 특성을 알아보기 위하여 색차계, 내마모 시험기, 연필경도 시험기를 사용하였다. 향후 후처리 공정으로 내지문(AF ; anti fingerprint coating) 박막 등과 같은 실용적인 박막을 증착할 계획이다.

• Journal of Biomedical Engineering Research
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• v.43 no.1
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• pp.11-18
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• 2022

An electromagnetic generator with variable stimulation parameters is required to conduct basic research on magnetic flux density and frequency for pulsed electromagnetic fields (PEMFs). In this study, we design an electromagnetic generator that can conduct basic research by providing parameters optimized for cell and animal experimental conditions through adjustable stimulation parameters. The magnetic core was selected as a solenoid capable of uniform and stable electromagnetic stimulation. The solenoid was designed in consideration of the experimental mouse and cell culture dish insertion. A voltage and current adjustable power supply for variable magnetic flux density was designed. The system was designed to be adjustable in frequency and pulse width and to enable 3-channel output. The reliability of the system and solenoid was evaluated through magnetic flux density, frequency, and pulse width measurements. The measured magnetic flux density was expressed as an image and qualitatively observed. Based on the acquired image, the stimulation area according to the magnetic flux density decrease rate was extracted. The PEMF frequency and pulse width error rates were presented as mean ± SD, and were confirmed to be 0.0928 ± 0.0934% and 0.529 ± 0.527%, respectively. The magnetic flux density decreased as the distance from the center of the solenoid increased, and decreased sharply from 60 mm or more. The length of the magnetic stimulation area according to the degree of magnetic flux density decrease was obtained through the magnetic flux density image. A PEMF generator and stimulation parameter control system suitable for cell and animal models were designed, and system reliability was evaluated.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.17-18
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• 2011

Plasma in liquid phase has attracted great attention in the last few years by the wide domain of applications in material processing, decomposition of organic and inorganic chemical compounds and sterilization of water. The plasma in liquid is characterized by three main regions which interact each - other during the plasma operation: the liquid phase, which supply the plasma gas phase with various chemical compounds and ions, the plasma in the gas phase at atmospheric pressure and the interface between these two regions. The most complex region, but extremely interesting from the fundamental, chemical and physical processes which occur here, is the boundary between the liquid phase and the plasma gas phase. In our laboratory, plasma in liquid which behaves as a glow discharge type, is generated by using a bipolar pulsed power supply, with variable pulse width, in the range of 0.5~10 ${\mu}s$ and 10 to 30 kHz repetition rate. Plasma in water and other different solutions was characterized by electrical and optical measurements. Strong emissions of OH and H radicals dominate the optical spectra. Generally water with 500 ${\mu}S/cm$ conductivity has a breakdown voltage around 2 kV, depending on the pulse width and the repetition rate of the power supply. The characteristics of the plasma initiated in ultrapure water between pairs of different materials used for electrodes (W and Ta) were investigated by the time-resolved optical emission and the broad-band absorption spectroscopy. The deexcitation processes of the reactive species formed in the water plasma depend on the electrode material, but have been independent on the polarity of the applied voltage pulses. Recently, Coherent anti-Stokes Raman Spectroscopy method was employed to investigate the chemistry in the liquid phase and at the interface between the gas and the liquid phases of the solution plasma system. The use of the solution plasma allows rapid fabrication of the metal nanoparticles without being necessary the addition of different reducing agents, because plasma in the liquid phase provides a reaction field with a highly excited energy radicals. We successfully synthesized gold nanoparticles using a glow discharge in aqueous solution. Nanoparticles with an average size of less than 10 nm were obtained using chlorauric acid solutions as the metal source. Carbon/Pt hybrid nanostructures have been obtained by treating carbon balls, synthesized in a CVD chamber, with hexachloro- platinum acid in a solution plasma system. The solution plasma was successfully used to remove the template remained after the mesoporous silica synthesis. Surface functionalization of the carbon structures and the silica surface with different chemical groups and nanoparticles, was also performed by processing these materials in the liquid plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.