• Journal of Advanced Marine Engineering and Technology
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• 제20권5호
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• pp.93-102
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• 1996

Laser-induced plume and laser-target interaction during pulsed laser deposition are demonstrated for a lead zirconate titanate (PZT). A KrF excimer laser (wavelength 248nm) was used and the laser was pulsed at 20Hz, with nominal pulse width of 20ns. The laser fluence was~$16J/cm^2,$ with 100mJ per pulse. The laser-induced plasma plume for nanosecond laser irradiation on PZT target has been investigated by optical emission spectra using an optical multichannel analyzer(OMA) and by direct observation of the plume using an ICCD high speed photography. OMA analysis showed two distinct ionic species with different expansion velocities of fast or slow according to their ionization states. The ion velocity of the front surface of the developing plume was about $10^7$cm/sec and corresponding kinetic energy was about 100eV. ICCD photograph showed another kind of even slower moving particles ejected from the target. These particles considered expelled molten parts of the target. SEM morphologies of the laser irradiated targets showed drastic melting and material removal by the laser pulse, and also showed the evidence of the molten particle ejection. The physics of the plasma(plume) formation and particle ejection has been discussed.

• 한국분말재료학회지
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• 제12권5호
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• pp.345-350
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• 2005

In this study the nanostructured ${\alpha}-Al_{2}O_3$ ceramics have been fabricated by the combined application of magnetic pulsed compaction (MPC) and subsequent spark plasma sintering (SPS), and their density and hardness properties were investigated. The ${\alpha}-Al_{2}O_3$ prepared by the combined processes showed an increase by $8.4\%$ in density, approaching the value close to the true density, and an enhancement by $210\~400\;Hv$ in hardness, compared to those fabricated by MPC or static compaction method followed by sintering treatment.

• 전력전자학회논문지
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• 제25권2호
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• pp.87-93
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• 2020

This study proposes a gate driver that operates semiconductor switches in the bipolar pulsed power modulator. The proposed gate driver was designed to receive isolated power and synchronized signals through the gate transformer. The gate circuit has a separate delay in the on-and-off operation to prevent a short circuit between the top and bottom switches of each leg. On the basis of the proposed gate circuit, a bipolar pulsed power modulator prototype with a 2.5 kV/100 A rating was developed. Finally, the bipolar pulsed power modulator was tested under resistive load and plasma reactor load conditions. It is verified that the proposed gate driver can be applied to a bipolar pulsed power modulator.

• 접착 및 계면
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• 제10권1호
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• pp.17-22
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• 2009

Polymer thin films were prepared by radio frequency (RF) plasma polymerization of phthalic anhydride (PA). First, monomer vaporization temperature ($100{\sim}160^{\circ}C$) was optimized by evaluating the thermal properties of thin films using differential scanning calorimeter (DSC) and measuring the root-mean-square (RMS) roughness with atomic force microscope (AFM) at the fixed plasma power of 10 W and time of 5 min in a continuous-wave (CW) mode. Plasma power (5~20 W) was then optimized by measuring the film solubility in solvents such as toluene, acetone, dimethylsulfoxide (DMSO) and 1 methylpyrrolidine (NMP). Next, pulsed mode plasma polymerization was also studied by varying the duty cycle of on-time (5, 20%) under optimized conditions of continuous-wave (CW) mode ($120^{\circ}C$, 10 W) in order to increase the anhydride functional groups. Finally, polymer thin films were characterized by Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analyzer (TGA) and ${\alpha}$-step.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of Welding and Joining
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• 제17권1호
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• pp.71-76
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• 1999

The real-time holographic interferometer with digital high-speed camera is applied to the experimental study of laser induced plasma/plume in pulsed Nd:YAG laser welding. A pulsed Nd:YAG laser with 1.2 kW average power is applied to generate laser induced plume. The recording speed of the high-speed camera is 3,000 f/s. The high speed photographs of weld plume without another visualization method, are compared with the visualization photographs with holographic interferometer. The radiation intensity from the laser induced plume is recorded by the high speed photographs, which fluctuated during laser radiation and disappeared after laser end. The density distribution of the plume is recorded by the holographic visualization method. The experimental results show the process of generation of the laser induced plasma/plume, and give the feasibility of quantitative measurement of laser induced plume in laser welding.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1601-1604
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• 1998

In this study, the impedance characteristic for wire-prate plused plasma reactor was analyzed by experiment. For this, rotary spark gap and MPC purse generator were used as power source. The reactor impedance decreases with increasing wire length and applied voltage. From this fundamental experiment, we deduced a method for the impedance matching between purse generator and pulsed plasma reactor.

• 대한금속재료학회지
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• 제46권1호
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• pp.39-43
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• 2008

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of $3 {\times}10^{17}atoms/cm^2$ in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with $2,000{\AA}$ $Si_3N_4 $ by PECVD. Cross-sectional TEM showed that continuous $500{\AA}$ thick buried oxide layer was formed with $300{\AA}$ thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.104-105
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• 2001

Recently, plasma injection has been suggested as a means to enhance and control combustion rates of propellant materials. It is also of interest for applications in fields such as rocket propulsion, electrothermal-chemical (ETC) launchers, and hypersonic mass acceleration technology. In order to characterize the plasma fundamental measurements such as the plasma excitation temperature and electron number density are essential. (omitted)

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.107-107
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• 2017

전자제품의 성능이 향상됨에 따라서 전자제품에 사용되는 부품의 고집적화가 필연적으로 요구되고 있으며, 고집적화 된 전자제품의 방열(heat dissipation)에 관한 문제점이 대두되고 있다. 방열은 전자기기의 성능과 수명을 유지하는데 있어서 중요한 문제 중 하나로서 방열 효과를 높이기 위해 다양한 연구 개발이 진행 중이다. 방열에 사용되는 소재로는 Cu가 있으며, 저렴한 가격과 상대적으로 높은 방열 효율을 가지는 장점이 있다. Cu는 전기 도금 증착 방법을 사용하여왔으나, 전기도금 방식으로 증착된 Cu 방열판은 제품에 열이 축적될 경우 Cu와 substrate 사이의 residual stress로 인해 박리나 뒤틀림 현상 등이 발생하여 high power를 사용하는 device의 방열 소재로 사용하기에는 개선해야 할 문제점이 있다. 이러한 문제점을 극복하기 위한 방법으로 magnetron sputter 증착 방법이 있으며, magnetron sputter은 대면적화가 용이하고, 다양한 물질의 증착이 가능한 장점으로 인해 hard coating 또는 thin film 증착과 같은 공정에 사용되고 있다. 특히 증착된 film의 특성을 조절하기 위해서 magnetron sputter에 pulse 또는 ICP (inductively coupled plasma) assisted 등을 적용하여 plasma 특성을 조절하는 방법 등에 관한 연구가 보고되고 있다. 본 연구에서는 pulsed magnetron sputtering 방식을 이용하여 증착된 Cu film 특성 변화를 확인하였다. 다양한 pulsing frequency와 pulsing duty ratio 조건에서, Si substrate 위에 증착된 Cu film과의 residual stress 변화를 측정하였다. Pulse duty ratio가 90% 에서 60%로 감소함에 따라서 Cu film의 residual stress가 감소하였고, pulsing frequency가 증가함에 따라 Cu film의 residual stress가 감소하는 것을 확인하였다. 증착 조건에 따른 plasma의 특성 분석을 위하여 oscilloscope를 이용하여 voltage와 current를 측정하였고, Plasma Sampling Mass spectrometer 를 이용하여 ion energy의 변화를 측정하였다. 이를 통해 plasma 특성 변화가 증착된 Cu film에 미치는 영향과 residual stress의 변화에 대한 연관성에 대하여 확인할 수 있었다.