• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.3 s.106
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• pp.239-248
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• 2006

In this paper, the cryogenically cooled low noise amplifier module for radio telescope receiver front-end using pHE-MT MMIC is designed and fabricated. In the selection of MMIC, the MMIC fabricated with the pHEMTS providing successful cryogenic operation are chosen. They are mounted in the housing using the thin film substrate. In the design of the housing, the absorber and the elimination of the gap between the carrier and the housing as well removed the unnecessary oscillations by its structure. The mismatch is improved by ribbon-tuning to provide the best performance at room temperature. The fabricated module shows the gain of $35dB{\pm}1dB$ and the noise figure of $2.37{\sim}2.57dB$ at room temperature over $21.5{\sim}23.5GHz$. In the cryogenic temperature of $15^{\circ}K$ cooled by He gas, the measured gain was above 35 dB and flatness ${\pm}2dB$ and the noise temperatures of $28{\sim}37^{\circ}K$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.442-448
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• 2021

In this work, the (K_1-xAg_x)(Ta_0.8Nb_0.2)O₃ (x=0.1-0.4) ceramics were fabricated using mixed-oxide method, and their structural and electrical properties were measured. All specimens represented a pseudo cubic structure with the lattice constant of 0.3989 nm. When 0.4 mol of Ag was added, second phases induced from metallic Ag and K₂(Ta,Nb)₆O₁₆ phase were observed. Dielectric constant and dielectric loss of K(Ta_0.8Nb_0.2)O₃ specimen doped with 0.3 mol of Ag were 2,737 and 0.446, respectively. The curie temperature was about -5℃, which does not change with Ag addition. The remanent polarization began to decrease sharply around 12~15℃, and the temperature at which the remanent polarization began to decrease as the applied voltage increased shifted to the high temperature side. The electrocaloric effect (ΔT) and electrocaloric efficiency (ΔT/ΔE) of the (K_0.7Ag_0.3)(Ta_0.8Nb_0.2)O₃ ceramics were 0.01024℃ and 0.01825 KmV^-1, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.297-303
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• 2024

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.