• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.174-174
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• 2010

In this article, the dry etching mechanism of ZnO thin films in $N_2/Cl_2$/Ar gas chemistry was investigated. The ZnO thin films were deposited on Si substrate using Atomic layer deposition. The etching experiments were performed by inductively coupled plasma system. The maximum etch rate was104.5 nm/min and the highest selectivity of ZnO over $SiO_2$ was 3.3. Etching rate was measured by surface profiler. And the chemical reaction on the surface of the etched ZnO thin films was investigated by x-ray photo electrons pectroscopy. As a result of XPS, $Zn2p_{3/2}$ peak shifted toward a higher binding energy and the O-O and N-O bond were obtained from the sample of ZnO thin film which after plasma treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.298-299
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• 2008

Images of deposited layers of organic light-emitting diodes were observed by scanning-electron microscope (SEM). We were able to see a clear cross-sectional view of deposited layers. The SEM is a type of electron microscope that images the sample surface by scanning it with a high-energy beam of electrons in a raster scan pattern. A thickness of deposited layer measured by thickness monitor is close to a real value measured by a-step surface profiler within 5%. We were able to see a formation of domains of size about 50-100nm from a surface morphology of Al, and pin holes of size about 50nm.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.220-221
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• 2005

Sub-bottom profiler(SBP) has been used extensively for the mapping of basement in the foundation design of offshore structure, for pre- and post-dredging operations within harbors and channels, for selection of pipeline routes, sitting of drilling platforms, and in the exploration for an aggregates such as sands and gravels. During the construction of Siwha embankment for irrigation water and the expansion of arable land, the breaking of an embankment unfortunately occurred so that a lot of riprap was swept away and widely dispersed by the tide and strong current. The feasibility study for the construction of the tidal-powered electric plant in Siwha embankment was performed quite recently. Therefore we made use of SBP survey to investigate the distribution of the lost riprap. We could successfully map out the distribution of the lost riprap from the reflection amplitude characteristics of the sediments in SBP data set. We demonstrated the variation of reflection amplitude versus the sediments with and/or without riprap by means of the numerical modeling of acoustic wave equation using finite difference method. Also we examined an amplitude anomaly of the ripraped area through the physical modeling using ultrasonic.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.2
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• pp.69-74
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• 2020

In this study, we proposed a method for surface profiling aspheric lens molds using a precision displacement sensor with a spatial scanning mechanism. The precision displacement sensor is based on the confocal principle using a broadband light source, providing a 10 nm resolution over a 0.3 mm measurable range. The precision of the sensor, depending on surface slope, was evaluated via Allan deviation analysis. We then developed an automatic surface profiling system by measuring the cross-sectional profile of a lens mold. The precision of the sensor at the flat surface was 10 nm at 10 ms averaging time, while 200 ms averaging time was needed for identical precision at the steepest slope at 25 deg. When we compared the measurement result of the lens mold to a commercial surface profiler, we found that the accuracy of the developed system was less than 90 nm (in terms of 3 sigmas of error) between the two results.

• IEMEK Journal of Embedded Systems and Applications
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• v.3 no.3
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• pp.158-166
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• 2008

These days, mobile embedded systems adopt flash memory capable of XIP feature since they can reduce memory usage, power consumption, and software load time. XIP provides direct access to ROM and flash memory for processors. However, using XIP incurs unnecessary degradation of applications' performance because direct access to ROM and flash memory shows more delay than that to main memory. In this paper, we propose a memory management framework, dynamic XIP, which can resolve the performance degradation of using XIP. Using a constrained RAM cache, dynamic XIP can dynamically change XIP region according to page access pattern to reduce performance degradation in execution time or energy consumption resulting from native XIP problem. The proposed framework consists of a page profiler gathering applications' memory access pattern using PMU and an XIP manager deciding that a page is accessed whether in main memory or in flash memory. The proposed framework is implemented and evaluated in Linux kernel. Our evaluation shows that our framework can reduce execution time at most 25% and energy consumption at most 22% compared with using XIP-only case adopted in general mobile embedded systems. Moreover, the evaluation shows that in execution time and energy consumption, our modified LRU algorithm with code page filters can reduce more than at most 90% and 80% respectively compared with applying just existing LRU algorithm to dynamic XIP.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.25-28
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• 2001

In this paper, we have investigated the effects of gas flow rate, rf power, process pressure and Ar addition on reactive ion etching of InP, InGaAs and InAlAs using Sic14 and Cl$_2$ gases. The etch rates were measured by using a surface profiler. The etched profiles, sidewall roughness, and surface morphology were observed by scanning electron microscopy and by atomic force microscopy. The selective etching of InGaAs to InP and InAlAs was studied by varying the etching parameters. It was found that Cl$_2$ gas is more efficient for the selective etching of InGaAs to InAlAs than SiCl$_4$ gas. The etch selectivity of InGaAs to InAlAs is strongly dependent on the rf power and the process pressure.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.50-50
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• 2010

최근 토요타 자동차의 대량 리콜 사태로 안전과 관련된 자동차 품질에 대한 관심과 중요성이 크게 부각되었다. 본 연구에서는 나날이 높아지고 있는 자동차 품질 기준과 생산 비용 절감, 공정 자동화 요구에 부응하기 위한 차체 저항 점 용접부 품질 검사 자동화 기술 개발을 위해 적용 가능한 센서들을 비교, 검토하였다. 알려진 비파괴 검사 방법은 초음파, 와전류, 방사선 검사법 등 다양한 방법들이 존재하지만, 이 연구에서는 생산 라인 현장 적용이 가능한 소형 센서들을 중심으로 검토 영역을 제한하였다. 검토된 비파괴 검사 방법은 총 5가지 종류로 종래의 수동 초음파 검사법, 집적된 탐촉자를 이용한 3차원 초음파 검사법, NAUT(Non-contact Air-coupled Ultrasonic Test), EMAT(EletroMagnetic Acoustic Test), 그리고 너겟 프로파일러$^{TM}$이다. 이 연구에서는 각 검사법의 원리와 장단점을 설명하고 생산 라인 적용에 필요한 필수 항목들에 대해 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.99-99
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• 1999

투명전도막인 Ito(Indium Tin Oxide)는 flat panel display 와 solar cell 같은 optoelectronic 이나 microelectronic device에서 널리 이용되어 지고 있다. 현재 상용화되고 있는 거의 대부분의 ITO 박막은 sputtering법에 의해 제조되고 있으나 공정상의 이유로 15$0^{\circ}C$이상의 기판온도가 요구되어진다. 그런, 실제 display device 제조공정에서는 비정질 실리콘 박막이나 유기막 위에 ITO박막을 제작할 필요성이 증대되어 지고 있고, 또한 다른 전자소자에 있어서도 상온 ITO 박막 형성 공정에 대한 필요성이 증대되고 있다. 이러한 이유로 본 실험에서는 IBAE(Ion Beam Assisted Evsporation)을 이용하여 저온 ITO박막을 유기막 위에 증착하는 공정에 대한 연구를 수행하였다. 이렇게 증착된 ITO 박막의 결정성은 비정질이었다. 또한, 모든 display device 제작에는 식각공정이 필수인데 기존에 사용되고 있는 wet etching 법은 등방성 식각특성 때문에 미세 pattern 형성에 부적합？, 따라서 비등방성 식각에 용이한 plasma etching법을 사용하여 저온 증착된 ITO 박막의 식각특성을 알아보았다. 실험에 사용된 식각장비는 자장 강화된 유도결합형 플라즈마 식각장비(MEICP)를 사용하였으며, 13.56MHz의 RF power를 사용하였다. 식각조건으로 source power는 600W~1000W, 기판 bias boltage는 -100V~-250V를 가하였으며, Ar, CH4, O2, H2, BCl3의 식각 gases, 5mTorr~30mTorr의 working pressure 변화 그리고 기판 온도에 따른 식각특성을 관찰하였다. ITO 가 증착된 기판으로는 유기물 중 투명전도성 박막에 기판으로서 사용가능성이 클 것으로 기대되어지는 PET(polyethylene-terephtalate), PC(polycarbonate), 아크릴을 사용하여 기판 변화가 식각특성에 미치는 영향에 대해서 각각 관찰하였다. 식각속도의 측정은 stylus profiler를 이용하여 측정하였으며 식각후에 표면상태는 scanning electron spectroscopy(SEM)을 이용하여 관찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.223-223
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• 1999

PZT(PbZr1-xTixO3) 박막은 고유전율과 같은 remanent polarization을 가져서 고집적 소자의 커패시터 유전율층 또는 비휘발성 메모리 소자의 제조에 이용되고 있으나, fatigue 와 aging 문제로 인하여 새로운 물질의 개발이 필요한데, 그 대표적으로 연구되고 있는 것이 PMN-PT(Pb(Mg1/3Nb2/3)O-PbTiO3) 이다. 본 실험에서는 sol-gel 법에 의하여 제조된 PMN-PT막을 ICP(Inductively coupled plasma)에 의하여 식각하였고 mask층으로는 PR을 사용하였다. 식각 가스로는 Ar, Cl, BCl를 단독 또는 혼합하여 사용하였으며, 식각 특성을 보기 위하여 RF Power, Substrate bias, Operation pressure, Substrate temperature를 변화시켰다. 식각속도는 stylus profiler를 이용하여 측정하였고, 단면 profile은 scanning electron microscopy (SEM)를 이용하여 관찰하였다. 식각 메커니즘을 규명하고자 식각된 박막의 표면을 X-ray photoelectron spectroscopy (XPS)로 관찰하였고, optical emission spectroscopy (OES)로 플라즈마 특성을 규명하고자 하였다. 식각속도는 Ar 또는 Cl2 플라즈마에 BCl3 가스를 혼합하였을 경우 증가되었고, BCl3 가스를 단독으로 사용하여도 높은 식각속도를 나타내었으며, BCl3의 첨가량이 늘어날수록 PR의 식각속도는 감소하여 높은 선택비를 보였다. 90% BCl3/10%Cl2 플라즈마에서 2800$\AA$/min의 식각속도 그리고 1.37:1의 PR 선택비를 얻을 수 있었다. Power나 기판 bias 증가에 따라 식각속도는 증가하였으나 기판 온도변화에는 민감하지 않았다. BCl3 rich에서의 식각속도 증가와 선택비 증가는 B2O3의 형성에 의한 것으로 생각된다.

• Journal of Environmental Science International
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• v.22 no.5
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• pp.591-597
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• 2013

For Kangjeong stream and Akgeun stream in the central part of the southern Jeju Island, on-site discharge estimation was carried out for approximately 10 months (July 2011-April 2012) twice a month on a regular basis by using ADCP (acoustic doppler current profiler) and long term rate of discharge was calculated by using SWAT (soil and water assessment tool) model. The discharge was $0.28-1.30m^3/sec$ for Kangjeong stream and $0.10-1.54m^3/sec$ for Akgeun stream. It showed the maximum in the summer and the minimum in the winter. As a result of parameter sensitivity analysis of SWAT model, CN (NRCS runoff curve number for moisture condition II), SOL_AWC (available water capacity of the soil layer), and ESCO (soil evaporation compensation factor) showed sensitive responses. By using the result, the model was corrected and the rate of discharge was calculated. As a result, the annual discharge rate was 27.12-31.86(%) at the Akgeun basin and 23.55-28.43(%) at the Kangjeong basin.