• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2006년도 춘계학술대회 및 창립 30주년 심포지엄(논문집)
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• pp.19-27
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• 2006

상선승무원들의 승선근무로 인한 질병 발생 및 의료관리실태를 조사하여 승선근무로 인해 발생되는 질병예방 및 건강증진을 위한 기초 자료를 제공하기 위한 목적으로 1049명의 상선승무원들을 대상으로 설문 및 면접을 통해 조사 분석한 결과는 다음과 같다. 최근 12개월 동안 승선 중 당직근무에 지장을 받을 정도의 질병을 경험한 선원은 69.0%였으며, 질병경험분포에 유의성을 나타낸 변수는 연령(p<0.05), 소득수준 (p<0.01), 승선경력(p<0.01), 직급(p<0.01), 건강인식도(p<0.01), 건강염려도(p<0.01), 피로도(p<0.01), 직업 만족도(p<0.05), 휴식시간(p<0.05) 등이었으며, 질병경험은 치주질환 7.3%>무좀 6.6%>위궤양 6.4%>외상 3.3% 순이었다. 질병군별 질병 발생은 근골격계질환이 17.8%로 가장 많았고 구강계질환 13.6% > 피부계질환 12.4% > 소화계질환 12.1% 순이었으며, 발생 질병의 불편기간은 31일 이상이 35.7%, 입원기간과 치료기간은 각각 7일 이하가 50.2%, 42.8%, 의료시설 이용은 의원급이 27.9%로 가장 높게 조사되었다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2006년도 춘계학술대회 및 창립 30주년 심포지엄(논문집)
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• pp.29-38
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• 2006

어선원들의 승선근무로 인한 질병 발생 실태와 질병 발생에 영향을 미치는 인자들을 파악하여 승선근무로 인한 질병발생 예방 및 건강증진을 위한 기초자료를 제공하기 위한 목적으로 624명의 어선원들을 대상으로 설문 및 면접을 통해 수집 분석한 결과는 다음과 같다. 최근 12개월 동안 당직근무에 지장을 받은 질병을 경험한 어선원이 70.2%였으며, 질병발생에 유의한 영향을 미친 변수들은 연령, 직위, 건강인식도, 피로도, 휴식시간, 노동강도, 초과근무시간 등이었다. 연령이 많을수록(p<0.01), 피로도가 높을수록 (p<0.01), 노동강도가 높을수록(p<0.01), 초과근무시간이 많을수록(p<0.05) 질병경험이 높았고 건강인식도는 낮을수록(p<0.01), 휴식시간은 짧을수록(p<0.01) 질병경험이 높았다. 당직 근무에 지장을 준 질병 중 가장 많이 경험한 질병은 위장병 8.7%>디스크 7.2> 외상 7.1% 순으로 조사되었으며, 질병군별 분석에서는 근골격계질환이 가장 높은 20.5%의 분포를 보였으며 그 다음으로 소화기계 14.3%> 손상 및 중독 13.5%> 구강계 11.9% 순으로 많이 발생한 것으로 조사되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.156-156
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• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.7-8
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• 2010

The surface conductive layer (SCL) of chemical vapor deposition (CVD) diamonds has attracting much interest. However, neither photoemission electron microscopic (PEEM) nor micro-spectroscopic (PEEMS) information is available so far. Since SCL retains in an ultra-high vacuum (UHV) condition, PEEM or PEEMS study will give an insight of SCL, which is the subject of the present study. The sample was made on a Ib-type HTHP diamond (001) substrate by non-doping CVD growthin a DC-plasma deposition chamber. The SCL properties of the sample in air were; a few tens K/Sq. in sheet resistance, ${\sim}180\;cm^2/vs$ in Hall mobility, ${\sim}2{\times}10^{12}/cm^2$ in carrier concentration. The root-square-mean surface roughness (Rq) of the sample was ~0.2nm as checked by AFM. A $2{\times}1$ LEED pattern and a sheet resistance of several hundreds K/Sq. in UHV were checked in a UHV chamber with an in-situ resist-meter [1]. The sample was then installed in a commercial PEEM/S apparatus (Omicron FOCUS IS-PEEM) which was composed of electro-static-lens optics together with an electron energy-analyzer. The presence of SCL was regularly monitored by measuring resistance between two electrodes (colloidal graphite) pasted on the two ends of sample surface. Figure 1 shows two PEEM images of a same area of the sample; a) is excited with a Hg-lamp and b) with a Xe-lamp. The maximum photon energy of the Hg-lamp is ~4.9 eV which is smaller that the band gap energy ($E_G=5.5\;eV$) of diamond and the maximum photon energy of the Xe-lamp is ~6.2 eV which is larger than $E_G$. The image that appear with the Hg-lamp can be due to photo-excitation to unoccupied states of the hydrogen-terminated negative electron affinity (NEA) diamond surface [2]. Secondary electron energy distribution of the white background of Figs.1a) and b) indeed shows that the whole surface is NEA except a large black dot on the upper center. However, Figs.1a) and 1b) show several features that are qualitatively different from each other. Some of the differences are the followings: the two main dark lines A and B in Fig.1b) are not at all obvious and the white lines B and C in Fig.1b) appear to be dark lines in Fig.1a). A PEEMS analysis of secondary electron energy distribution showed that all of the features A-D have negative electron affinity with marginal differences among them. These differences can be attributed to differences in the details of energy band bending underneath the surface present in SCL [3].

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.221-221
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• 2013

Vertical LED (VLED) has been recognized as a way to obtain the high-power LED due to their advantages [1]. However, approximately 4% of the light generated from the active region is extracted, if the light extraction from side walls and back side is neglected because of Fresnel reflection (FR) and total internal reflection (TIR) [2,3]. In this study, the optical simulation of the VLED with the various microstructures was performed. Among them, the microlens having the diameter of 3 ${\mu}m$ and the height of 1.5 ${\mu}m$ shown the best result was chosen, and then, optimized microlens was formed on a GaN template using conventional semiconductor process. Various microstructures were proposed to improve the light extraction efficiency (LEE) of the VLED for the simulation. The LEE was simulated using LightTools based on a Monte Carlo ray tracing. The microstructures with hemisphere, cone, truncated and cylinder pattern having diameter of 3 ${\mu}m$ were employed on the top layer of the VLED respectively. The improvement of the LEE by using the microstructure is 87% for the hemisphere, 77% for the cone, 53% for the truncated, 21% for the cylinder, compared with the LEE of the flat surface at the reflectance of 85%. The LEE was increased by 88% at the height of 1.5 ${\mu}m$, compared with the LEE of the flat surface. We found that the microlens on the top layer is the most suitable for increasing the LEE. In order to apply the proposed microlens on n-GaN surface, we fabricated microlens on a GaN template. A photoresist array having hexagonal-closed packed microlens was fabricated on the GaN template. Then, optimization of etching the GaN template was performed using a dry etching process with ICP-RIE. The dry etching carried out using a gas mixture of Cl2 and Ar, each having a flow rate of 16 sccm and 10 sccm, respectively with RF power of 50 W, ICP power of 900 W and chamber pressure of 2 mTorr was the optimum etching condition as shown in Fig. 2(a).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• 한국광물학회:학술대회논문집
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• 한국광물학회.한국암석학회 2003년도 공동학술발표회 논문집
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• pp.54-54
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• 2003

The metasedimentary rocks together with various granitoids are the main constituents in Taebaeksan gneiss complex, northern Yeongnam Massif. Chemical compositions of sedimentary rocks may reflect the nature of the provenance and could be crucial for understanding the evolution of early continental crust. Previous workers have suggested that the provenance and tectonic studies based on the geochemistry of sediments are applicable to the Precambrian samples. In this study we analyzed the major, trace and REE elements of metasedimentary rocks to understand their provenance and tectonic setting during sedimentation. The overall geochemical characteristics of metasedimentary rocks are similar to those of average shale of the post-Archean. Major element chemistry indicates mature and sorted nature of the sediments. The degree of weathering in the source rocks the is not uniform, as inferred from a large scatter in chemical indices of weathering (CIW). The immobile trace elements such as Th, Sc, and REE can be used to discriminate various sedimentary processes. The Th/sc ratios (0.9 - 4.4) are larger than those of the upper crust and average shale, suggesting that the felsic source predominates. The contents of Ni and Cr and the variations in the ratio of compatible to incompatible elements are similar to the average post-Archean shale. Uniform chondrite-normalized REE pattern with the LREE enrichment (LaN/SmN = 4.9 ${\pm}$ 0.4) and slight negative Eu anomalies (Eu/Eu$\^$*/ = 0.7 ${\pm}$ 0.1) also support this observation. The presence of negative Eu anomaly indicates that intracrustal igneous processes involving plagioclase separation have affected the provenance rocks. The LREE enrichment implies the major role of felsic rocks in source rocks. The eNd (1.9 Ga) values of metasediment rocks vary from 9.4 to 6.7, corresponding to TDM of 2.9 - 2.7 Ga. On the other hand, the 147Sm/144Nd ratios are 0.1079 - 0.1101, corresponding to typical tettigenous sediments. The geochemical features of metasedimentary rocks such as high abundances of large ion lithophile elements, high ratios of Th/Sc and La/Sm, commonly high Th/U ratios, negative Eu anomalies, and negative eNd, suggest a provenance consisting virtually entirely of recycled upper continental crust in passive margin environment. Tectonic discrimination diagrams based upon major element compositions also support this suggestion. In conjunction with igneous activity and metamorphism in the convergent margin setting at 1.8 - 1. 9 Ga, the transition from passive margin to active margin characterize the Paleoproterozoic crustal evolution in northern Yeongnam Massif.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2011년도 학술발표회
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• pp.13-13
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• 2011

The Rio Grande Compact Commission, in collaboration with local water management entities, water users and universities established a three state Rio Grande The Rio Grande Compact Commission, in collaboration with local water management entities, water users and universities established a three state Rio Grande Salinity Management Program. The objectives of the Rio Grande Project Salinity Management Program are to reduce salinity concentrations, loading, and salinity impacts in the Rio Grande basin for the 270 mile river reach from San Acacia, New Mexico to Fort Quitman, Texasto increase usable water supplies for agricultural, urban, and environmental purposes. The focus of this first phase of the program is the development of baseline salinity and hydrologic information and a preliminary assessment of the economic impacts of salinity. An assessment of the economic impacts of salinity in this region was conducted by scientists at Texas A&M University's AgriLife Research Center at El Paso and New Mexico State University. Economic damages attributable to high salinity of Rio Grandewater were estimated for residential, agricultural, municipal, and industrial uses. The major impact issues addressed were: who is being affected the types of economic impacts the magnitude of economic damages overall and by user category and identification of threshold-effect levels for different types of water use. Salinity concentrations in this 270 mile reach of the river typically range from 480 ppm to 1,200 ppm, but can exceed 3,000 ppm in the lower section of this reach. Economic impacts include reductions in agricultural yields, reduced water appliance life, equipment replacement costs, and increased water supply costs. This preliminary economic assessment indicates annual damages of $10.5 million from increased water salinity. Under current water uses, municipal and industrial uses account for 75% of the total estimated impacts. However, agricultural impacts are based on current crop pattern yield reductions and, salinity leaching requirements and do not account for the impacts of reduced revenue from having to grow salinity tolerant, lower value crops. Actual damages are anticipated to be significantly higher with the inclusion of these additional agricultural impacts plus the future impacts from the growing population in the region. A more comprehensive economic analysis is planned for the second phase of this program. Results of the economic analysis are being used to determine the feasiblity of salinity control alternatives and what salinity reduction control measures will be pursued.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2019년도 학술발표회
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• pp.96-97
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• 2019

최근 홍수파 또는 댐 및 보 등의 하천구조물과, 본류와 지류의 합류로 인해 발생하는 배수영향 등으로 하천에 고리형 수위-유량관계가 나타나 수위-유량관계식의 신뢰도가 저하된다고 판단되는 대하천 본류와 합류부 인근 지류에서 초음파유속계 측정결과를 지표로 활용하는 자동유량장치가 현재 58개소에 도입되어 운용되고 있다. 그러나, 최근 4대강 사업으로 다기능보 설치 등 하천의 수리적 특성이 변동하였고, 지류에서 주로 운용되는 수위-유량관계 기반 유량관측소에 본류-지류합류로 인한 배수영향으로 고리형 수위-유량관계가 형성될 경우, 지류 수위관측소를 자동유량관측소로 대체할 필요성이 제기되고 있다. 또한, 기존 자동유량관측소의 경우 홍수량이 기준이하로 나타날 경우 수위-유량 관계식으로 대체하는 경우도 있는데 적용기준이 명확하지 않다. 본 연구에서는 신규 자동유량장치 설치, 기존 수위관측소의 자동유량관측소대체, 자동유량관측소에서 수위-유량관계곡선의 활용 기준 마련 등을 명확하게 판단하기 위해 고리형 수위-유량관계 패턴을 분석하고 배수영향구간을 산정하여 제시하고 지류 수위관측소의 존속여부, 유량자료의 적절성을 판단할 수 있는 방법론을 제시 하고자한다. 이를 위해, 다기능보 설치 및 지류-본류로 인한 지류하천의 배수영향과 홍수파에 의한 고리형 수위-유량관계의 양상을 다양한 수문사상에 대해 분석하였다. 분석방법으로는 대상유역을 선정하고, 대상유역에 대한 부정류 모형을 구축하기 위해 HEC-RAS 모형을 사용하고, 대상유역에 대한 HEC-RAS 지형자료와 유량입력자료를 구축한다. HEC-RAS 부정류 모형 구축 후 다양한 본류와 지류의 유량을 가정하여 고리형 수위-유량 발생 패턴을 분석한다. 지류-본류 합류 영향의 경우, 본류영향의 유무를 고려하여 상승된 수위의 비율로부터 일정 유의수준을 두어 배수영향구간을 산정한다. 다기능보의 영향은 다기능보 설치 전후를 가정하여 영향을 분석한다. 본 연구에서는 시범구역으로 하류에 창녕함안보가 위치한 낙동강과 합류하는 남강과 하류에 달성보가 위치한 낙동강과 합류하는 금호강을 대상하천으로 하여 위 분석방법을 적용하였다. 분석결과 남강의 경우 지류 유량이 작은 경우에도 본류 유량이 상대적으로 큰 경우 배수영향에 의한 고리형이 나타났고, 다기능보에 의한 배수영향은 매우 적은 것으로 나타났다. 또한, 지류의 유량이 큰 경우 홍수파에 의한 고리형 관계도 발생함을 알 수 있었다. 금호강의 경우 또한 마찬가지로 본류의 유량에 의해 발생하는 고려형 관계가 지배적임을 알 수 있었다. 따라서 이러한 결과를 바탕으로 95%의 유의 수준을 기반으로 고리형 발생 여부를 확일할 수 있는 모노그래프를 남강, 금호강에 대해 작성하여 수위-유량관계 기반 유량 산정의 적절성을 판단하는 기준으로 제안하였다.