• Nuclear Engineering and Technology
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• 제39권5호
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• pp.603-616
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• 2007

Roy Huddle, having invented the coated particle in Harwell 1957, stated in the early 1970s that we know now everything about particles and coatings and should be going over to deal with other problems. This was on the occasion of the Dragon fuel performance information meeting London 1973: How wrong a genius be! It took until 1978 that really good particles were made in Germany, then during the Japanese HTTR production in the 1990s and finally the Chinese 2000-2001 campaign for HTR-10. Here, we present a review of history and present status. Today, good fuel is measured by different standards from the seventies: where $9*10^{-4}$ initial free heavy metal fraction was typical for early AVR carbide fuel and $3*10^{-4}$ initial free heavy metal fraction was acceptable for oxide fuel in THTR, we insist on values more than an order of magnitude below this value today. Half a percent of particle failure at the end-of-irradiation, another ancient standard, is not even acceptable today, even for the most severe accidents. While legislation and licensing has not changed, one of the reasons we insist on these improvements is the preference for passive systems rather than active controls of earlier times. After renewed HTGR interest, we are reporting about the start of new or reactivated coated particle work in several parts of the world, considering the aspects of designs/ traditional and new materials, manufacturing technologies/ quality control quality assurance, irradiation and accident performance, modeling and performance predictions, and fuel cycle aspects and spent fuel treatment. In very general terms, the coated particle should be strong, reliable, retentive, and affordable. These properties have to be quantified and will be eventually optimized for a specific application system. Results obtained so far indicate that the same particle can be used for steam cycle applications with $700-750^{\circ}C$ helium coolant gas exit, for gas turbine applications at $850-900^{\circ}C$ and for process heat/hydrogen generation applications with $950^{\circ}C$ outlet temperatures. There is a clear set of standards for modem high quality fuel in terms of low levels of heavy metal contamination, manufacture-induced particle defects during fuel body and fuel element making, irradiation/accident induced particle failures and limits on fission product release from intact particles. While gas-cooled reactor design is still open-ended with blocks for the prismatic and spherical fuel elements for the pebble-bed design, there is near worldwide agreement on high quality fuel: a $500{\mu}m$ diameter $UO_2$ kernel of 10% enrichment is surrounded by a $100{\mu}m$ thick sacrificial buffer layer to be followed by a dense inner pyrocarbon layer, a high quality silicon carbide layer of $35{\mu}m$ thickness and theoretical density and another outer pyrocarbon layer. Good performance has been demonstrated both under operational and under accident conditions, i.e. to 10% FIMA and maximum $1600^{\circ}C$ afterwards. And it is the wide-ranging demonstration experience that makes this particle superior. Recommendations are made for further work: 1. Generation of data for presently manufactured materials, e.g. SiC strength and strength distribution, PyC creep and shrinkage and many more material data sets. 2. Renewed start of irradiation and accident testing of modem coated particle fuel. 3. Analysis of existing and newly created data with a view to demonstrate satisfactory performance at burnups beyond 10% FIMA and complete fission product retention even in accidents that go beyond $1600^{\circ}C$ for a short period of time. This work should proceed at both national and international level.

• 광물과 암석
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• 제33권3호
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• pp.185-193
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• 2020

자원의 재활용 관점에서 굴패각의 소성에 관한 연구가 많이 진행되고 있다. 굴패각을 소성시켜 만들어진 생석회는 건식으로 사용되기도 하고 물과 반응을 시켜 액상소석회로 변환시킨 뒤 사용되기도 한다. 그러나 굴패각은 석회석과는 약간 다른 소성 및 액상소석회 변화의 특성을 보여준다. 본 연구에서는 굴패각과 이를 비교하기 위한 석회석을 소성시켜 생석회를 만든 후 이를 다양한 온도의 물과 반응시켜 액상소석회로 변환 실험을 실시하였다. 액상소석회로 변환 후 150 ㎛의 체를 이용하여 거르고 액상소석회로의 전환률을 계산하였다. 소성된 석회석은 모든 온도에서 액상소석회로 전환되었다. 그러나 굴패각의 경우 본 연구의 실험조건 중 30℃와 50℃에서 액상소석회로 변환되지 않고 오히려 물과의 반응을 통하여 만들어진 Ca(OH)₂의 존재로 질량이 증가하였으며 90℃에서도 석회석 보다는 낮은 액상소석회 전환률을 보여주었다. 굴패각에서 보여주는 이러한 차이는 굴패각의 각주층과 진주층에서 발견되는 단백질의 일종인 콘키올린이 높은 온도에서도 분해되지 않아 물과의 반응을 감소시켜 생기는 결과로 일부 설명할 수 있다. 그러나 콘키올린이 존재하지 않는 초크층에서도 석회석 보다 액상소석회의 변화률이 낮음을 보여준다. 이것은 석회석에는 거의 존재하지 않으나 굴패각에서 미량으로 존재하는 Na에 의하여 소성 시 패각의 방해석이 공융용융체 형성과 같은 추가적인 반응에 의한 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• 자원환경지질
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• 제29권4호
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• pp.421-428
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• 1996

망간단괴내에 자생하는 필립사이트는 단괴의 핵을 이루는 풍화된 화산암편과 고화된 해저퇴적물 또는 단괴를 이루는 망간광물들의 층간에서 산출된다. 이 광물은 주로 화산성 유리질 석기들의 가상조직을 보이고 있으며, 연한 노란색을 갖는 등립질의 판상으로 산출된다. 필립사이트 입자들은 자형의 삼각능, 사각기둥 또는 도변상을 가지며 크기는 길이 $2{\sim}20{\mu}m$, 두께 $2{\sim}5{\mu}m$정도이다. 이 광물의 화학조성은 $({Ca_{0.1}Mg_{0.3}Na_{1.1}K_{1.5}})_3{(Fe_{0.3}Al_{4.2}Si_{11.8})O_{32}{\cdot}10H_2O}$이며, $Si/(Al+Fe^{+3})=2.37-2.78$, Na/K=0.59-0.81 로서 Si와 알카리의 함량이 아주 높다. 결정구조는 단사정계($P2_l/m$) 속하며 $a=10.005{\AA}$, $b=14.129{\AA}$, $c=8.686{\AA}$, ${\beta}=124.35^{\circ}$ 이고 $V=1013.6{\AA}^3$ 이다. 심해저 환경으로 보아 망간단괴에서 산출되는 필립사이트는 보통 $10^{\circ}C$ 이하의 온도, 0.7 kb 정도의 압력, pH 8 정도의 조건에서 자생하는 것으로 추정된다.