• Journal of the Institute of Electronics Engineers of Korea SP
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• v.49 no.4
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• pp.58-66
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• 2012

Currently many devices reproduce electronic images in the various ways. However, the color that is reproduced in any device is different from the original color due to the differences in the gamut between devices. A recent trend in gamut mapping algorithms is the use of spatial information to compute the color transformation of pixels from the input to the output gamut. However, these techniques share the problem of preserving details, and avoiding halos, and hue shift. In this paper, spatial gamut mapping for preserving the details of the input image is proposed. Our approach improves visibility of detail that is not effectively represented with conventional spatial gamut mapping. In proposed method, initially, we gamut map the input image using gamut clipping and obtain a detail layer for both the input and the gamut mapped images. Next, we calculate the difference between the two detail layers, obtaining the details of the out of gamut region. Finally, we add the details of out of gamut region to the gamut mapped image. Since the resulting image has out of gamut colors, we obtain resulting image of proposed method by using a gamut clipping method. Consequently, the printed output image was more consistent with the corresponding monitor image.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.43-50
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• 2014

By the trends of electronic package to be smaller, thinner and more integrative, the reliability of interconnection between Si chip and printed circuit board is required. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder joints with different the thicknesses of electroless Ni-P deposit. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without $HNO_3$ vapor treatment. The high speed shear energy of SAC405 solder joint with $1{\mu}m$ Ni-P deposit was found to be lower without $HNO_3$ vapor, compared to those of over $3{\mu}m$ Ni-P deposit. This could be due to the edge of solder resist in $1{\mu}m$ Ni-P deposit, which provides a fracture location for the weakened shear energy of solder joints and brittle fracture in high speed shear test. With $HNO_3$ vapor, the brittle fracture mode in high speed shear test decreased with increasing the thickness of Ni-P deposit. Then the roughness (Ra) of Ni-P deposits decreased with increasing its thickness. Thus, this gives the evidence that the decrease in roughness of Ni-P deposit for Eelectroless Ni/ Electroless Pd/ Immersion Au (ENEPIG) surface play a critical role for improving the robustness of SAC405 solder joint.

• Clean Technology
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• v.19 no.4
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• pp.410-415
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• 2013

The supercapacitors were fabricated using silver (Ag) nano paste and activated carbon paste on the polyimide (PI) film and 5% potassium polyacrylate (PAAK) was used for gel electrolyte. In this paper, the current collector film and the electrode film were fabricated using screen printing. The thickness of printed silver paste was $7.3{\mu}m$ and the sheet resistance has the range of $5-7m{\Omega}/square$. An activated carbon with a surface area of $1,968m^2/g$, an electronic conducting agent (SUPER P, TIMCAL) and poly (4-vinylphenol) were mixed in 2-(2-buthoxyethoxy) ethyl acetate (BCA) with a ratio of 7:1:3 to fabricate the electrode paste. To analyze electrochemical characteristics, cyclic voltammetry was performed to evaluate the stability of the devices under the voltage range of -0.5-0.5 V. The calculated specific capacitances were 44.04 and 8.62 F/g for 10 and 500 mV/s scan rates, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.695-700
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• 2018

This paper presents the development of compact and lightweight broadband power amplifier module using HMIC (Hybrid Microwave Integrated Circuit) technology that could be high-density integration for many non-packaged microwave components into the small area of a high dielectric constant printed circuit board, such as a ceramic substrate, also using the special design and fabrication schemes for the structure of minimized electromagnetic interference to obtain the homogeneous electrical performance at the wideband frequency. The results confirmed that the small signal gain has a gain flatness of ${\pm}1.5dB$ within the range of 32 to 36 dB. In addition, the output power satisfied more than 30 dBm. The noise figure was measured within 7 dB, and OIP3 (Output Third Order Intercept Point) was more than 39 dBm. The fabricated broadband power amplifier satisfied the target specification required to electrically drive the high power amplifiers of jamming generators for electronic warfare, so the actual applicability to the system was verified. Future studies will be aimed at designing other similar microwave power amplifiers in the future.