• 소성∙가공
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• 제13권4호
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• pp.374-381
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• 2004

In this study, the deformation behavior of semi-solid Al-Si alloy was investigated by nanoindenter as a part of the research on the surface crack behavior in thixoformed automobile component. The microstructure of semi-solid Al-Si alloy consists of primary and eutectic regions. In eutectic regions the crack initiation begins with initial fracture of the eutectic silicon particles and inside other intermetallic phases. Nano-deformation characteristics in the eutectic and primary phase of semi-solid aluminium alloy were investigated through the nano-indentation experiments and the AFM observation. In addition, mechanical properties of each region were investigated and compared with each other.

• 대한기계학회논문집A
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• 제23권7호
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• pp.1147-1154
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• 1999

The objective of this paper is to evaluate the fracture resistance characteristics of SA508 CL.1a carbon steel, and their associated welds manufactured for primary coolant piping system of nuclear power plants. The effect of various parameters such as pipe size, welding method and chemical composition on the material properties were discussed. Test results showed that the offset of pipe size on tincture toughness was negligible, while the effect of welding method on fracture toughness was significant. In addition, Fracture toughness for carbon steel was influenced by silicon contents due to the different steel refining processes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 A
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• pp.40-42
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• 1999

In this paper, light-weight system of linear induction motor(LIM) for light railway train is presented, and is compared with former type of LIM. For the light-weight system without modification of motor size the material of primary core(silicon steel) is changed with iron-cobalt alloy and the material of primary winding(copper) is changed with aluminium. The characteristics of LIM are analyzed. Specially, the air gap magnetic flux density distribution due to end effect is showed with motor velocity, we will present papers continuously through designing and testing a trial product.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국안광학회지
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• 제19권3호
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• pp.315-322
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• 2014

목적: 4-iodoaniline을 포함한 하이드로젤 콘택트렌즈 기본 재료에 티타늄 실리콘 산화물 나노입자를 첨가하여 친수성 착색 콘택트렌즈의 물리적 및 광학적 특성을 측정하고 제조된 고분자의 자외선 투과율을 측정하여 티타늄 실리콘 옥사이드 나노입자의 자외선 차단 안의료용 렌즈 소재로의 활용도 및 4-iodoaniline만을 기본 콘택트렌즈 재료에 공중합하여 두 실험군의 물성을 비교 분석하였다. 방법: 하이드로젤 렌즈 제조를 위해, HEMA, MA, MMA, 4-iodoaniline, 교차결합제인 EGDMA 및 개시제인 AIBN을 사용하여 공중합 하였다. 또한, 티타늄 실리콘 옥사이드 나노입자는 첨가제로 사용되었다. 중합 후 제조된 콘택트렌즈 재료의 함수율, 굴절률, 접촉각 및 분광투과율 등의 물리적 특성을 측정하였다. 결과: 하이드로젤 렌즈 고분자의 물성을 측정한 결과, 함수율 35.01~ 38.68%, 굴절률 1.4350~1.4418, 접촉각 $34.15{\sim}57.25^{\circ}$ 그리고 UV-B 투과율의 경우 1.0~10.0%의 범위로 나타났다. 또한 첨가제를 사용하지 않은 실험군에서는 함수율 34.0~36.8%, 굴절률 1.4378~1.4420, 접촉각 $40.15{\sim}60.16^{\circ}$ 그리고 UV-B 투과율의 경우 1.8~25.0% 범위의 분포를 나타내었다. 결론: 티타늄 실리콘 옥사이드 나노입자를 첨가한 조합에서 자외선 투과율이 크게 감소하는 것으로 나타났다.

• 열처리공학회지
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• 제7권4호
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• pp.244-252
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• 1994

The morphological changes of primary solid particles as a fuction of process time on Al-Si alloys during semi-solid state processing with a shear rate of 200s were studied. In hypereutectic Al-15.5wt%Si alloy, it was observed that primary Si crystals are fragmented in the early stage of stirring and morphologies of primary Si crystals change from faceted to spherical during isothermal shearing for 60 minutes. In quaternary Al-12.5wt%Si-2.9wt%Cu-0.7wt%Mg alloy system, it was observed both primary silicon and ${\alpha}$-alumunum particles. Microstructural evolution of primary Si crystals was similar to that of the hypereutectic Al-Si alloy but equiaxed ${\alpha}$-Al dendrites are broken into nearly spherical at the early stage of shearing and later stage of the isothermal shearing ${\alpha}$- Al particles are slightly coarsoned by Ostwald ripening. Mechanical properties of Al-Si-Cu-Mg alloy were compared to those from other processes (squeeze casting and gravity casting). After T6 heat treatment, comparable values of hardness were obtained while slightly lower compressive strength values were observed in rheocast alloy. The elongation, on the other hand, exhibited significant increasement of 15% over gravity cast alloy.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제52권3호
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• pp.101-106
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• 2003

The high temperature superconductor transformers gain interests from the industries. This paper described construction and test results of 10㎸A HTS transformer Three phase transformer with double pancake windings were constructed. To reduce the leakage magnetic field, secondary coil were placed between the two primary coils. BSCCO-2223 wire. silicon sheet steel core and FRP cryostats were used to construct the transformer. Three coils were stacked in one cryostat. Two double pancake coils were connected in series for the primary coil and one double pancake coil was used for the secondary coil. Total number of turns of the primary winding and the secondary winding were 112turns and 98urns, respectively, The rated voltages of each winding were 440/220V. The rated currents of each winding were 13.1/26.2A. After the tests of basic properties of the three phase HTS transformer using no-load test, short-circuit test and full-load test, continuous operation of 100 hours with pure resistive load has been carried out. Test results proved over-load capability and reliability of the HTS transformer.

• International Journal of Korean Welding Society
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• 제1권1호
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• pp.58-62
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• 2001

The surface of AC8A Ah alloy was modified by adding the Cu powder using a Plasma Transferred Arc (PTA) welding process. Under the optimum fabricating conditions, the modified surface of AC8A Ah alloy was observed to possess the sound microstructure with a minimum porosity. Hardness and wear resistance properties of the as-fabricated alloy were compared with those of the 76 heat-treated one. In case of the as-fabricated alloy, the hardness of the modified layer was twice that of the matrix region. Although significant increase in the hardness of the matrix region was observed after T6 heat treatment, the hardness of the modified layer was not observed to change. The wear resistance of the modified layer was significantly increased compared to that of the matrix region. The microstructure of a weld zone and the matrix region were investigated using the optical microscope, scanning electron microscope (SEM), electron probe microanalysis (EPMA), and transmission electron microscope (TEM). The primary and eutectic silicon in the weld zone were finer and more curved than in the matrix region, while some precipitates has had been found therein. According to the TEM observation, the predominant precipitate present in the weld zone was the $\theta$'phase, which is precipitated during cooling by rapid solidification in PTA welding process. Improvement of hardness and wear properties in the weld zone in the as-fabricated condition can be explained based on the presence of $\theta$’precipitates and fine primary and eutectic silicon distribution.

• 한국위성정보통신학회논문지
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• 제10권4호
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• pp.1-5
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• 2015

PPS 소자가 삽입된 부분웰 구조의 N형 실리콘 제어 정류기(NSCR_PPS) 소자에서 정전기 보호 성능의 향상을 위한 CPS 이온주입조건의 최적화에 대해 연구하였다. 종래의 NSCR 표준소자는 on-저항, 스냅백 홀딩 전압 및 열적 브레이크다운 전압이 너무 낮아 정전기 보호소자의 필요조건을 만족시키지 못해 적용이 어려웠으나, 본 연구에서 제안하는 CPS 이온주입과 부분웰 이온주입을 동시에 적용한 변형 설계된 소자의 경우 스냅백 홀딩 전압을 동작전압 이상으로 증가시킬 수 있는 향상된 정전기 보호성능을 나타내어 고전압 동작용 마이크로 칩의 정전기보호 소자로 적용 가능함을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.374-374
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• 2012

반도체 소자의 크기가 100 nm 이하로 감소되면 통상적인 이온 주입 조건인 이온 에너지, 조사량 및 이온 주입 각도뿐만 아니라 Dose Rate 및 모재 온도가 Dopant Profile을 조절하는 데에 있어서 매우 중요한 인자로 작용한다. 본 연구에서는 Ribbon-beam 및 Spot-beam을 사용하여 활성화 열처리 후 Dopant Profile을 분석하였다. 이온 주입은 모든 시편에서 $BF_2$를 가속 에너지 10 keV 및 조사량 $2{\times}10^{15}/cm^2$로 고정하였다. 이온 주입 후 도펀트 활성화는 100% 질소 분위기 하에서 $850^{\circ}C$-30s 조건으로 RTA 열처리를 수행하였다. Boron 및 Fluorine의 Profile은 SIMS 분석을 통하여 구하였다. Spot-beam은 Ribbon-Beam에 비하여 Dose Rate 및 Cooling Efficiency가 높기 때문에 이온 주입 후 더욱 많은 양의 Primary-defect를 발생시키고 이에 따라 두꺼운 비정질 충을 형성한다. $BF_2$ 이온 주입 된 시편에서 B 및 F의 농도 Peak-height는 a/c 계면에 위치하는 것을 관찰하였다. 또한 B 및 F의 농도 Peak-height는 Silicon 모재의 온도가 증가할수록 증가하는 것을 관찰하였다. Silicon 모재의 온도가 증가함에 따라 Active-area의 면저항이 변화하지 않는 상태에서 Vt (Threshold Voltage)가 급격히 감소함을 관찰 하였다. 비정칠 층의 두께가 증가할수록 a/c 계면 하단에 잔존하는 Residual-defect의 양이 감소하고 이는 측면확산을 감소시키는 역할을 한다는 것이 관찰되었다.