• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권5호
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 2001년도 추계 학술발표회 논문집
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• pp.51-56
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• 2001

정유공장으로부터 발생으로 중잔사유를 이용하는 가스화 복합발전 플랜트에 대한 공정모사를 수행하였고, 공기분리장치의 연계공정 최적화를 통해 IGCC 플랜트이 효율을 극대화하였다. 가스화 복합사이클의 발전계통을 모델링하기 위해, 본 연구는 MS7001FA 가스터빈이 공기분리장치와 연계되어 있고, 공기분리장치를 위한 공기 추출과 공기분리장치로 부터의 질소회석이 이루어진다고 가정하였다. 가스터빈의 폐열은 삼중압력의 폐열회수 증기발생장치로부터 회수하였다. 정유공장 중잔사유는 Shell 가스화 및 Sulfinol-SCOT-Claus 공정을 거쳐, 합성가스 연료를 발생시키는 것으로 가정하였다. 공기분리 장치의 연계 공정 최적 결과는 가스화 복합사이클의 효율이, 질소 회석이 없는 경우와 있는 경우에 대해, 공기추출비 20% 또는 40-60%에서 가장 우수함을 보여주었다.

• 대한수학회보
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• 제29권1호
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• pp.137-143
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• 1992

The purpose of this paper is to provide the affirmative solution of the following conjecture due to Davis and Geramita. Conjecture; Let A=R[T] be a polynomial ring in one variable, where R is a regular local ring of dimension d. Then maximal ideals in A are complete intersection. Geramita has proved that the conjecture is true when R is a regular local ring of dimension 2. Whatwadekar has rpoved that conjecture is true when R is a formal power series ring over a field and also when R is a localization of an affine algebra over an infinite perfect field. Nashier also proved that conjecture is true when R is a local ring of D[ $X_{1}$,.., $X_{d-1}$] at the maximal ideal (.pi., $X_{1}$,.., $X_{d-1}$) where (D,(.pi.)) is a discrete valuation ring with infinite residue field. The methods to establish our results are following from Nashier's method. We divide this paper into three sections. In section 1 we state Theorems without proofs which are used in section 2 and 3. In section 2 we prove some lemmas and propositions which are used in proving our results. In section 3 we prove our main theorem.eorem.rem.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1475-1477
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• 1998

In this paper, breakdown strength and time to breakdown are experimented under semiconducting layer/needle electrode in XLPE which is used for power cable insulator. Shape and scale parameters of obtained data are estimated using 2-parameters Weibull distribution. Life-time coefficient(n-value) using shape parameters for breakdown strength and time to breakdown tests is estimated. n-value of 1000 hour aged XLPE showed higher value than that of virgin XLPE. Increase of n-value is estimated by the stability due to removal of by-product and residue gas in XLPE by heating.

• 한국환경보건학회:학술대회논문집
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• 한국환경보건학회 2002년도 춘계 국제 학술대회
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• pp.84-90
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• 2002

In 1995 we licensed pyrolysis gas melting technology of indirect heating type (using kiln) from Siemens AG, and built its demonstration facility in 1998 at Clean-Park-East of Fukuoka City to demonstrate the technology for municipal solid waste (MSW). In 1997 we were awarded an order from Kanemura Co., Ltd. to build a pyrolysis gas melting and power generation plant, specifically for treating residue from car shredder. The latter was launched in 1998, and is currently in commercial operation. The operation of these plants have proven the following facts. (1) The system is capable for performing a stable operation with a wide variety of waste. (2) Pyrolysis is achieved steadily regardless of the variation in the quality of waste. (3) The system can be operated under low excess air ratio (1.2∼1.3). (4) The concentration of dioxins at the furnace outlet is 0.062ng-TEQ/㎥$\_$N/, and 0.002ng-TEQ/㎥$\_$N/, at the stack. (the value is corrected to dryO$_2$ 12％) (5) The purity of recovered metals exceeds 90%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.26-29
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in $Cl_2(20)/CF_4(20)/Ar(80)$. As rf power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass sperometry.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권3호
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• pp.334-341
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• 2015

This research outlines the design of a HR-TDC (High Resolution Time-to-Digital Converter) for high data rate communication systems using a $0.18{\mu}m$ CMOS process. The coarse-fine architecture has been adopted to improve the resolution of the TDC. A two-stage vernier time amplifier (2S-VTA) was used to amplify the time residue, and the gain of the 2S-VTA was larger than 64. The error during time amplification was compensated using two FTDCs (Fine-TDC) with their outputs. The resolution of the HR-TDC was 0.15 ps with a 12-bit output and the power consumption was 4.32 mW with a 1.8-V supply voltage.