• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.315-318
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• 2009

Some particular bound state energies of an electron, under Coulomb potential field, confined in a two-dimensional circle and a three-dimensional sphere are analytically derived. The derivation shows that the electron cannot be bound in a negative energy state when the circle (or sphere) is smaller than a certain critical size. The critical size dependency on the strength of Coulomb potential and the angular momentum of the electron is also analytically derived. This system mimics quantum dots. Therefore the derivation provides new information on a minimum critical size of quantum dots with hydrogenic impurity.

• Journal of Magnetics
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• v.13 no.4
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• pp.124-127
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• 2008

The magnetic and electronic properties of Ni impurity in bcc Fe ($Ni_1Fe_{26}$) are investigated using the full potential linearized augmented plane wave (FLAPW) method based the generalized gradient approximation (GGA). We found that the Ni impurity in bcc Fe increases both the lattice constant and the magnetic moment of bcc Fe. The calculated equilibrium lattice constant of $Ni_1Fe_{26}$ in the ferromagnetic state was 2.84 A, which is slightly larger than that of bcc Fe (2.83 ${\AA}$). The averaged magnetic moment per atom of $Ni_1Fe_{26}$ unit cell was calculated to be $2.24{\mu}_B$, which is greater than that of bcc Fe (2.17 ${\mu}_B$). The enhancement of magnetic moment of $Ni_1Fe_{26}$ is mainly contributed by the nearest neighbor Fe atom of Ni, i.e., Fe1, and this can be explained by the spin flip of Fe1 d states. The density of states shows that Ni impurity forms a virtual bound state (VBS), which is contributed by Ni $e_{g{\downarrow}}$ states. We suggest that the VBS caused by the Ni impurity is responsible for the spin flip of Fe1 d states.

• Advances in nano research
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• v.5 no.1
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• pp.13-25
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• 2017

We examine the total optical dielectric function (TODF) of impurity doped GaAs quantum dot (QD) from the viewpoint of anisotropy, position-dependent effective mass (PDEM) and position dependent dielectric screening function (PDDSF), both in presence and absence of noise. The dopant impurity potential is Gaussian in nature and noise employed is Gaussian white noise that has been applied to the doped system via two different modes; additive and multiplicative. A change from fixed effective mass and fixed dielectric constant to those which depend on the dopant coordinate manifestly affects TODF. Presence of noise and also its mode of application bring about more rich subtlety in the observed TODF profiles. The findings indicate promising scope of harnessing the TODF of doped QD systems through expedient control of site of dopant incorporation and application of noise in desired mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.99-102
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• 2003

The electronic structure of ${\beta}-MnO_2$ having impurities in the site of Mn was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}MO_{56}]^{-52}$ (M = transient metals). Madelung potential and spin polarization were considered for more exact calculations. As results of calculations, the energy levels of all electron included in the model were obtained. The energy band gap and positions of impurity levies were discussed in association with impurity 34 orbital that seriously affect electrical properties of $MnO_2$. It was shown that the energy band gap decreased with the increase of the atomic number of transient metal impurity.

• Journal of the Korean Electrochemical Society
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• v.18 no.2
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• pp.51-57
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• 2015

We report the effect of the impurities including water and bromide in the propylmethylpyrrolidinium bis(trifluoromethanesulfonyl)imide (PMPyr-TFSI) on the electrochemical performance of lithium ion batteries. The several kinds of PMPyr-TFSI electrolytes with different amount of impurities are applied as the electrolyte to the cell with the high potential electrode, $LiNi_{0.5}Mn_{1.5}O_4$ spinel. It is found that the impurities in the electrolytes cause the detrimental effect on the cell performance by tracing the cycleability, voltage profile and Coulombic efficiency. Especially, the polarization and Coulombic efficiency go to worse by both impurities of water and bromide, but the cycleability was not highly influenced by bromide impurity unlike the water impurity.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.611-615
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• 1999

Piezoelectric properties of PMN-PZT ceramics with $CeO_2$ impurity were investigated. Mechanical quality factor, $Q_m$ of 1792, 1285 and the electromechanical coupling coefficient, $k_p$ of 0.52, 0.54 were obtained from the specimen with 0.25 and 0.5 mole % $CeO_2$ respectively. Curie temperature was decreased with the addition of $CeO_2$ while the electric coercive field was proportional to the amount of impurity. Based on the system ceramics with 0.5 mole % cerium oxide, a Rosen type piezoelectric transformer was fabricated and tested. Voltage step-up ratios of 230 and 13 were obtained from the transformer at no load and $100 k\Omega$ resistance, respectively. Experimental results showed a potential of the transformer for the practical use coupled with the expected strength increase by the grain size refinement.

• Journal of Magnetics
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• v.4 no.4
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• pp.111-114
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• 1999

Numerical calculation for temperature dependence of galvanomagnetic properties of thin bismuth films is pursued. The quasi-two dimensional system is treated in the perturbation formalism of previous study, where realistic screened potential due to impurity is assumed to be the only scattering channel. The potential is separated into pure two dimensional part and the remaining presumed perturbation part. Relaxation time and mobilities for both electron and hole are evaluated, then temperature dependence of the Hall coefficient and magnetoresistance is obtained. The broad minimum of magnetoresistnace is manifested, and the interpretation under the kinetic theory is made. Thickness dependence of the quantities are also shown, which are in good agreement with the expected quantum size effect.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.817-824
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• 1996

Removal of Cu impurities on Si substrates using remote H-plasma was investigated. Si substrates were intentionally contaminated by 1ppm ${CuCI}_{2}$, standard chemical solution. To determine the optimal process condition, remote H-plasma cleaning was conducted varying the parameters of rf power, cleaning time and remoteness(the distance between the center of plasma and the surface of Si substrate). After remote H-plasma cleaning was conducted, Si surfaces were analysed by TXRF(total x-ray reflection fluorescence) and AFM(atomic force microscope). The concentration of Cu impurity was reduced by more than a factor of 10 and its RMS roughness was improved by more than 30% after remote H-plasma cleaning. TXRF analysis results show that remote H-plasma cleaning is effective in eliminating Cu impurity on Si surface when it is performed under the optimal process condition. AFM analysis results also verifies that remote H-plasma cleaning makes no damage to the Si surface. The deposition mechanism of Cu impurity may be explained by the redox potential(oxidation-reduction reaction potential) theory. Based on the XPS analysis results we could draw a conclusion that Cu impurities on the Si substrate are removed together with the oxide by a "lift-off" mechanism when the chemical oxide( which forms when Cu ions are adsorbed on the Si surface) is etched off by reactive hydrogen atoms.gen atoms.

• Analytical Science and Technology
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• v.35 no.3
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• pp.93-115
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• 2022

Potential impurities in pharmaceuticals could be produced during manufacture, distribution, and storage and affect quality and safety of pharmaceuticals. In particular, highly reactive impurities could result in carcinogenic (mutagenic) effects on human body. International Conference on Harmonisation (ICH) has provided M7(R1) guideline for "Assessment and Control of DNA Reactive (Mutagenic) Impurities in Pharmaceuticals to Limit Potential Carcinogenic Risk" and recommended an adoption of this guideline to the authorities. ICH M7(R1) guideline provides classification, accepted intakes, and controls of potential impurities in pharmaceuticals. However, since appropriate and unified analytical methods for impurities in pharmaceuticals have not been provided in this guideline, most potential impurities in pharmaceuticals are still difficult to manage and supervise by pharmaceutical companies and regulatory authorities, respectively. In this review, we briefly described definition of unintended mutagenic impurities, basic information in ICH M7(R1) guideline, and analytical methods to determine potential impurities. This review would be helpful to manage and supervise potential impurities in pharmaceuticals by pharmaceutical companies and regulatory authorities.

• YAKHAK HOEJI
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• v.37 no.1
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• pp.76-83
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• 1993

The changes in discharge current, emission and/or oscillation frequency of the electric oscillation of a glow discharge are the potential sensitive measure of the concentration of an impurity in the argon plasma supporting gas. A single jet enhanced glow discharge has been interfaced with the gas chromatograph via 1/8" O.D. tube with a heating pad to study the changes in discharge current. To investigate the optimum operating conditions of the glow discharge system as detector for gas chromatography, pressure, gas flow rate, discharge current, distance between the anode and the cathode have been studied.