• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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• pp.367-370
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• 2009

It is important to reduce a reflection of light as a solar cell is device that directly converts the energy of solar radiation to electrical energy in oder to improve efficiency of solar cells. The antireflection coating has proven effective in providing substantial increase in solar cell efficiency. This paper investigates the formation of thin film PSi(porous silicon) layer on the surface of crystalline silicon substrates without other ARC(antirefiection coating) layers. On the other hand the formation of $SO_{2}/SiN_x$ ARC layers on the surface of crystalline silicon substrates. After that, the structure of PSi and $SO_2/SiN_x$ ARC was investigated by SEM and reflectance. The formation of PSi layer and $SO_{2}/SiN_x$ ARC layers on the textured silicon wafer result about 5% in the wavelength region from 0.4 to $1.0{\mu}m$. It is achieved on the textured crystalline silicon solar cell that each efficiency is 14.43%, 16.01%.

• 대한금속재료학회지
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• 제50권11호
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• pp.839-845
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• 2012

The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

• 한국세라믹학회지
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• 제27권3호
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• pp.412-422
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• 1990

Porous SiC ceramics were proposed to be promising materials for high-temperature thermoelectric energy conversion. Throughthe thermoelectric property measurements and microstructure observations on the porous alpha SiC and the mixture of $\alpha$-and $\beta$-SiC, it was experimentally clarified that elimination of stacking faults and twin boundaries by grain growth is effective to increase the seebeck coefficient and increasing content of $\alpha$-SiC gives rise to lower electrical conductivity. Furthermore, the effects of additives on the thermoelectric properties of 6H-SiC ceramics were also studied. The electrical conductivity and the seebeck coefficient were measured at 35$0^{\circ}C$ to 105$0^{\circ}C$ in argon atmospehre. The thermoelectric conversion efficiency of $\alpha$-SiC ceramics was lower than that of $\beta$-SiC ceramics. The phase homogeneity would be needed to improve the seebeck coefficient and electrical conductivity decreased with increasing the content of $\alpha$-phase. In the case of B addition, XRD analysis showed that the phase transformation did not occur during sintering. On the other hand, AlN addiiton enhanced the reverse phase transformation from 6H-SiC to 4H-SiC, and this phenomenon had a great effect upon the electrical conductivity.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 춘계학술강연 및 발표대회강연 및 발표논문 초록집
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• pp.39-40
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• 2006

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.863-863
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• 2006

• 한국세라믹학회지
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• 제32권3호
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• pp.385-393
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• 1995

Akali-resistant porous glass was prepared by phase separation in Na2O-B2O3-SiO2 system containing ZrO2 and MgO. ZrO2 was added for alkali-resistance and MgO for anti-cracking during leaching. Optimal content of ZrO2 for alkali-resistance was 7wt% and devitrification by heat treatment resulted from further addition. Pore size and pore volume were decreased and specific surface area was increased with ZrO2 addition due to depression in phase separation. Addition of 3mol% MgO to mother glass containing 7wt% ZrO2 was effective for anti-crack during leaching. In this case, with phase separation at 55$0^{\circ}C$ and 5$25^{\circ}C$ for 20 hrs. crack-free porous glasses could be prepared. The relation between pore size r and heat treatment time t at 55$0^{\circ}C$ was D=25.58＋18.16t. According to measurement of gas permeability, the mechanism of gas permeation was Knudsen flow. N2 and He permeability of porous glass which was prepared by heat treatment at 55$0^{\circ}C$ for 20 hrs. were 0.843$\times$10-7mol/$m^2$.s.Pa and 2.161$\times$10-7mol/$m^2$.s.Pa respectively.

• 멤브레인
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• 제17권3호
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• pp.254-268
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• 2007

다양한 재료특성(Si/Al 몰비, 두께, 구조적 불완전성)을 갖는 Na형 faujasite 제올라이트 분리층을 다공성 $\alpha$-알루미나 튜브 표면에 수열조건에서 이차성장 시키고 $CO_2/N_2$ 분리거동을 $CO_2/N_2$ 몰비가 1인 혼합기체에 대하여 $30^{\circ}C$에서 평가하였다. 수열조건 중에서 수열용액 내의 $SiO_2$ 양은 형성된 제올라이트 분리층의 재료특성에 가장 큰 영향을 주는 변수임을 확인하였다. 즉, 수열용액 내의 $SiO_2$ 양이 증가함에 따라서 형성된 제올라이트 분리층의 Si/Al 몰비, 두께, 구조적 불완전성(discontinuity)은 동시에 증가하였다. 본 논문에서는 불완전한 치밀화에 의해 잔존하는 결정립간 공극(void), GIS Na-P1 상에 의해 형성된 균열(crack) 등 구조적 불완전성이 $CO_2/N_2$ 분리에 가장 큰 영향을 주는 재료특성이며, 투과부에서의 $CO_2$ 탈착이 전체 $CO_2$ 투과의 율속단계(rate-determining step)임을 확인하였다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2004년도 추계총회 및 연구발표회 초록집
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• pp.97.2-97.2
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• 2004

• 한국세라믹학회지
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• 제51권5호
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.

• 한국산학기술학회논문지
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• 제19권3호
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• pp.576-583
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• 2018

탄화규소는 실리콘과 비교시 큰 에너지 밴드 갭을 갖고, 불순물 도핑에 의해 p형 및 n형 전도의 제어가 용이해서 고온용 전자부품 소재로 활용이 가능한 재료이다. 특히 ${\beta}$-SiC 분말로부터 제조한 다공질 n형 SiC 세라믹스의 경우, $800{\sim}1000^{\circ}C$에서 높은 열전 변환 효율을 나타내었다. SiC 열전 변환 반도체를 응용하기 위해서는 변환 성능지수도 중요하지만 $800^{\circ}C$ 이상에서 사용할 수 있는 고온용 금속전극 또한 필수적이다. 일반적으로 세라믹스는 대부분의 보편적인 용접용 금속과는 우수한 젖음을 갖지 못 하지만, 활성 첨가물을 고용시킨 합금의 경우, 계면 화학종들의 변화가 가능해서 젖음과 결합의 정도를 증진시킬 수 있다. 액체가 고체 표면을 적시면 액체-고체간 접합면의 에너지는 고체의 표면에너지 보다 작아지고 그 결과 액체가 고체 표면에서 넓게 퍼지면서 모세 틈새로 침투할 수 있는 구동력을 갖게 된다. 따라서 본 연구에서는 비교적 낮은 융점을 갖는 Ag를 이용해서 다공질 SiC 반도체 / Ag 및 Ag 합금 / SiC 및 알루미나 기판간의 접합에 대해 연구하였고, Ag-20Ti-20Cu 필러 메탈의 경우 SiC 반도체의 고온용 전극으로 적용 가능할 것으로 나타났다.