• 제목/요약/키워드: polymeric insulator

검색결과 62건 처리시간 0.034초

옥외용 HTV 실리콘고무 절연재료의 열화 및 회복특성 (Aging and Recovery of HTV Silicone Rubber Used for Outdoor Insulator)

  • 연복희;허창수;조한구
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권10호
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    • pp.465-472
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    • 2002
  • This paper presents a study on the aging and recovery of HTV (high temperature vulcanized) silicone rubber used for outdoor insulators. UV irradiation, corona discharge and water immersion were employed as factors of the artificial aging. The effects of changes derived from these stresses on the tracking and arc resistance of silicone rubber were examined. We have investigated the aging phenomena of HTV silicone rubber by the above stresses using the surface energy calculation with contact angle measurement, solvent-extraction, and surface/volume resistivity and so on. These results showed that UV irradiation and corona discharge lead to nearly the same surface oxidation, but the percentage change of mobile low molecular weight by these stresses was different. Furthermore, the oxidized layer induced under UV irradiation restricted the recovery of hydrophobic surface. Water immersion little lowered hydrophobicity level and leaded to a loss of tracking and arc resistance. The degradation mechanism based on our results was discussed.

전기절연물용 GFRP의 winding 각도에 따른 굽힘강도 (Bending strength of GFRP for Insulator according to Winding Angle)

  • 박효열;강동필;안명상;이태주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.429-432
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    • 2004
  • The demand for electric power keeps growing, and tends to be more effective. Polymer insulators have been manufactured for almost twenty years and the excellent insulation performance of polymer insulators is attractive. Polymeric materials are now widely used as a replacement for inorganic materials such as porcelain or glass for the outdoor insulation of high voltage insulation. GFRP has been used widely as a core materials for polymer insulators. This paper reports the mechanical properties of GFRP for insulators. The bending strength was simulated and evaluated according to the winding angle. The fiber orientation in GFRP has a great effect on the strength of GFRP because the strength of GFRP mainly depends on the strength of fiber. Results of simulated and evaluated strength of GFRP were compared each other. The simulated strength of GFRP rod was different from the evaluated strength. It was caused that the shear stress had a great effect on the strength of GFRP although the stress of parallel direction of GFRP was much higher.

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An Organic Electrophosphorescent Device Driven by All-Organic Thin-Film Transistor using Polymeric Gate Insulator

  • Pyo, S.W.;Shim, J.H.;Kim, Y.K.
    • Journal of Information Display
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    • 제4권2호
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    • pp.1-6
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    • 2003
  • In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

HVDC용 나노복합 절연재료의 DC절연파괴특성 연구

  • 정의환;윤재훈;이승수;임기조
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.155-155
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    • 2009
  • This paper introduces the findings of a detailed study on breakdown voltage strength under DC voltage and the development of HVDC cable. Recently, Nano-fillers are attracting attentions of many researchers and engineers, since they seem to bring higher potentials for advancement of electrical insulating properties as nano-composites. Additives and fillers are often adopted to polymeric materials for improving insulating and machanical properties. We have improved the polymer composition and developed a new insulation material for HVDC cable. Each specimen blended at LDPE1 to antioxidant, LDPE2 to antioxidant, pure XLPE was manufactured respectively. The insulation performances of the proposed insulator were compared with specimens blended at nano powders. DC breakdown strength of LDPE1 specimen at 90[$^{\circ}C$] was higher than other specimens. The experimental results show that polar groups intorduced in moleculars chains of blended specimen plays an important role in enhancement of thermal conductivity.

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Effect of Side Chain Structure of Gate Insulator on Characteristics of Organic Thin Film Transistor

  • Yi, Mi-Hye;Ha, Sun-Young;Pyo, Seung-Moon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.487-490
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    • 2006
  • We propose a new method to achieve well-defined surface properties of the polymeric gate dielectrics without using SAM technique and inserting another organic/inorganic buffer layer. Pentacene thin film transistors(OTFTs) fabricated with the polyimide gate insulators with different side chain structures were demonstrated. Further, a relationship between the surface properties (surface morphology, surface energy, etc) of the films and the performance of OTFTs have investigated, which will be given in more detail in presentation.

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용액 공정 고분자 게이트 절연체를 이용한 Top-Gate 펜타센 박막 트랜지스터에 관한 연구 (Study on the Top-Gate Pentacene Thin Film ransistors Using Solution Processing Polymeric Gate Insulator)

  • 형건우;김준호;서지훈;구자룡;서지현;박재훈;정용우;김유현;김우영;김영관
    • 한국응용과학기술학회지
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    • 제25권3호
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    • pp.388-394
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    • 2008
  • 본 논문에서는 용액 공정을 이용한 고분자 절연층을 갖는 top-gate 구조의 펜타센 박막 트랜지스터(Thin Film Transistor, TFT)의 특성을 연구하였다. Top-gate 구조의 펜타센 TFT 제작에 앞서 유기 반도체인 펜타센의 결정성 성장을 돕기 위해서 가교된 PVP (cross-linked poly(4-vinylphenol))를 유리 기판 상에 스핀 코팅을 이용하여 형성한 후, 노광 공정을 통해 니켈/은 구조를 갖는 채널 길이 $10{\mu}m$의 소오스, 드레인 전극을 형성하였다. 그리고 열 증착을 이용하여 60 nm 두께의 펜타센 층을 성막하였고, 고분자 절연체로서 PVA(polyvinyl alchol) 또는 가교된 PVA를 용액공정인 스핀 코팅을 이용하여 형성한 후 열 증착으로 알루미늄 게이트 전극을 성막하였다. 이로써 제작된 소자들의 전기적 특성을 확인한 결과 가교된 PVA를 사용한 펜타센 TFT 보다 PVA를 게이트 절연체로 사용한 소자가 전기적 특성이 우수한 것으로 관찰되었다. 이는 PVA의 가교 공정에 의한 펜타센 박막의 성능 퇴화에 기인한 것으로 사료된다. 실험 결과 $0.9{\mu}m$ 두께의 PVA 게이트 절연막을 사용한 top-gate 구조의 펜타센 TFT의 전계 효과 이동도와 문턱전압, 그리고 전류 점멸비는 각각, 약 $3.9{\times}10^{-3}\;cm^2/Vs$, -11.5 V, $3{\times}10^5$으로써 본 연구에서 제안된 소자가 용액 공정형 top-gate 유기 TFT 소자로서 우수한 성능을 나타냄을 알 수 있었다.

고분자 절연체를 이용한 칩투칩 본딩 (Chip-to-chip Bonding with Polymeric Insulators )

  • 오예진;전성우;신진수;류기윤;윤현식
    • 마이크로전자및패키징학회지
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    • 제31권3호
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    • pp.87-90
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    • 2024
  • 현재 3D 집적을 위한 하이브리드 본딩 공정에서 산화물을 절연체로 사용하는 경우 박리가 일어나거나 RC 지연이 증가하는 문제가 발생한다. 본 연구에서는 유전율을 제어할 수 있는 고분자 절연체를 이용한 하이브리드 본딩을 연구하였다. 고분자 계면의 de-wetting 방식의 가능성을 확인하기 위해 기존의 마이크로 범프(micro bump)에 고분자를 코팅 후 열 압착 본딩을 진행하여 금속 사이의 고분자가 빠져나가도록 하였다. 본 연구에서 수행된 하이브리드 본딩의 절연체로 고분자를 도입할 경우, 고분자의 저유전율 특성과 미세 피치 금속 본딩으로 RC 지연을 줄여 신호 전달 속도가 향상될 것으로 사료된다. 또한 차후 이 기술을 하이브리드 본딩에 적용하여 I/O 단자 수가 증가되어 상용화될 것을 기대한다.

스핀 코팅으로 제작된 유기 절연체와 P3HT 유기 박막 트랜지스터 특성 (Characteristics of Organic Thin-Film Transistors with Polymeric Insulator and P3HT by Using Spin-Coating)

  • 김중석;장종현;김병민;주병권;박정호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1313-1314
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    • 2007
  • This paper presents organic thin-film transistors (OTFTs) with poly(3-hexylthiophene)(P3HT) semiconductor and several polymeric dielectric materials of poly(vinyl phenol)(PVP), poly(vinyl alcohol)(PVA), and polyimide(PI) by using soluble process. The fabricated OTFT's have inverted staggered structure using transmission line method(TLM) pattern. In order to evaluate the electrical characteristics of the OTFT, capacitance-voltage(C-V) and current-voltage(I-V) were measured. C-V graphs were measured at several frequencies of 100 Hz, 1 kHz, and 1 MHz and ID-VDS graphs according to $V_{GS}$. The current on/off ratio and threshold voltage with each of PVP, PVA, and PI based OTFTs were measured to $10^3$, and -0.36, -0.41, and -0.62 V. Also, the calculated mobility with each of PVP, PVA, and PI was 0.097, 0.095, and 0.028 $cm^{2}V^{-1}s^{-1}$, respectively. In the cases of PVP and PVA, the hole mobility of P3HT was in excellent agreement with the published value of 0.1 $cm^{2}V^{-1}s^{-1}$.

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옥외용 실리콘 고무의 침식요인에 관한 연구 (The erosion factor of silicone rubber for outdoor use)

  • 서광석;김정호;이호열;박용관;양계준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.117-120
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    • 1998
  • It is analyzed the erosing process of the polymeric insulator for outdoor use with the inclined plane method. Materials used are the different type of silicone rubber, they have the content of filler and component each other. As the content of filler added to improve the tracking and erosion resistance. It has the difference of electrical performance and erosion rate. The dry-band arc is also the parameter of accelerating erosion, and appear in the form of leakage current, and the activities of leakage current has a close relationship with the surface hydrophobicity. In this paper, the erosion growth is observed by measuring the time from the voltage application to the whole breakdown, and the erosion depth. In addition, it is measured the hydrophobicity and leakage current to be a cause of erosion by the erosion steps, studied SEM, EDX for observing the transformation of surface structure by erosing.

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$M_1-P-M_2$형 접촉으로 인하여 생기는 단락전류 (Short-Circuit Currents arising at a $M_1-P-M_2$ Contacts)

  • 이덕출
    • 전기의세계
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    • 제25권1호
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    • pp.95-100
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    • 1976
  • The main purpose of this paper is to study on the transient current due to the change of environmental temperature under no external field in the arrangement of M$_{1}$(metal)-P(polyver)-M$_{2}$(metal). The specimer of polymeric insulator sandwiched by two metal electrodes composes a parallel-plate condenser represented by Maxwell-model. The behaviors of short circuit current flowing in M-P-M arrangement are very complex and the analysis of its conduction mechanism appears to be much complicated. In this paper we can suggest that a contact potential difference as an energetic state exists in the thin film specimen both sides of which are contacted by two different metals having different cook functions. Futhermore the contact potential difference appears to be constant through the course of temperature change, however, the dielectric constant and caparitance of the specimen must be temperature dependent. Accordingly the charge difference induced on both sides of electrodes may be a cause for the shory circuited transient current flowing through the external circuit. It is also suggestive that the results of the observation must be considered in cases of insulation design of electrical machines and D.C. cable for high voltage use.

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