• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.79-86
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• 1997

An electro-optic polymer digital optical switch with rib waveguides is designed and fabricated by using the RIE method. POlarization-independent and wavelength-insensitive operation is demonstrated at the wavelengths of 1.3mm and 1.55mm, for the first time in electro-optic polymer-based devices. The rib waveguides have been designed to achieve good guiding properites for both TE and TM polarizations by controlling the etching depth as well as its aspect ratio. Especially theetching depth is controlled to change the guided mode profiles of the rib waveguide and thus to achieve an optimum coupling in the branch. The measured crosstalk is better than -16dB and the extincton ratio of each output port is greater than 16dB.

• Journal of the Korean Ceramic Society
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• v.43 no.4 s.287
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• pp.220-223
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• 2006

BLT nanotubes were synthesized by using simple and convenient method template-wetting process. Porous alumina membranes were prepared by 2 step anodic oxidation as the template. To improve wetting properties and make low surface energy, BLT solution was mixed with polymer. Polymer was removed completely during annealing. After completely etching the template in 30 wt% KOH solution, we demonstrate that BLT nanotubes with a diameter of 200 nm can be fabricated. Grain growth process of BLT nanotubes during baking, and furnace annealing was examined by FE-SEM and XRD.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.34-35
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• 2000

A Y-branch phase modulator made of an electro-optic(EO) polymer has been designed and fabricated. An EO polymer, PMMA-DR1, is used for the core layer, and UV-curable polymers, UV-15 and UV-15 LV, for the cladding layers. The rib type polymeric waveguides are fabricated by the reactive ion etching method and their EO effects are obtained by the poling process. The optical properties of the fabricated phase modulator are as follows: the halfwave voltage, $V_{\pi}$, is 25 V, the insertion loss of TM mode is 13.8 dB, and the intensity modulation is 0.17 % (V).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.823-827
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• 2005

Barrier ribs in the plasma display panel (PDP) function to maintain the discharge space between the glass plates as well as to prevent optical crosstalk. Patterning of barrier ribs is one of unique processes for making PDP. Barrier ribs could be formed by screen-printing, sand blasting, etching, and photolithographic process. In this work photosensitive barrier rib pastes were prepared by incorporating binder polymer, solvent, functional monomers photoinitiator, and barrier rib powder of which surface was treated with fumed silica particles. Studies on the function of materials for the barrier rib paste were undertaken. After optimization of paste formulation and photolithographic process, it was applied to the photosensitive barrier rib green sheet and was found that photolithographic patterning of barrier ribs could be formed with good resolution up to $110{\mu}m$ height and $60{\mu}m$ width after sintering.

• Journal of Applied Reliability
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• v.17 no.1
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• pp.66-71
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• 2017

Purpose: Polymer capacitors are known to have very high reliability as compared with liquid electrolytic capacitors, but their capacity has been reported to decrease in charge and discharge at low temperature. The purpose of this study to clarify these characteristics. Methods: In order to clarify these characteristics, charging-discharging tests were carried out for 200 hours with three different capacities and at 5 different temperature from $5^{\circ}C$ to $100^{\circ}C$. Results: As a result of the test, it was confirmed that the capacity of the polymer capacitor was decreased with higher capacity and lower temperature. Conclusion: Such a failure phenomenon was caused by the shrinkage and expansion characteristics of the polymer used therein, it is presumed that this failure phenomenon is due to the complex pore structure made by etching.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.214-220
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• 1991

The effects of $SiO_2$ reactive ion etching (RIE) in $CHF_{3/}C_2F_6$ on the surface properties of the underlying Si substrate were studied by X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) techniques. Angle-resolved XPS analysis was carried out as non-destructive depth profile one for investigating the chemical bonding states of silicion, carbon, oxygen and fluorine. The residue layer consists of C-F polymer. O-F bond was found on the top of the polymer layer and Si-O, Si-C and Si-F bonds were detected between Si substrate and polymer film. A 60nm thick damaged layer of silicon surface mainly contains carbon and fluorine.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.155-160
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• 1998

It is necessary to use Arc layer and DUV resist to define 0.25 $\mu \textrm{m}$ line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries; $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using $Cl_2/O_2$ gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using $Cl_2$/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.915-918
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• 2010

In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.1
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• pp.199-206
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• 2005

Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.