• 전자공학회논문지D
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• 제34D권4호
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• pp.79-86
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• 1997

An electro-optic polymer digital optical switch with rib waveguides is designed and fabricated by using the RIE method. POlarization-independent and wavelength-insensitive operation is demonstrated at the wavelengths of 1.3mm and 1.55mm, for the first time in electro-optic polymer-based devices. The rib waveguides have been designed to achieve good guiding properites for both TE and TM polarizations by controlling the etching depth as well as its aspect ratio. Especially theetching depth is controlled to change the guided mode profiles of the rib waveguide and thus to achieve an optimum coupling in the branch. The measured crosstalk is better than -16dB and the extincton ratio of each output port is greater than 16dB.

• 한국세라믹학회지
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• 제43권4호
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• pp.220-223
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• 2006

BLT nanotubes were synthesized by using simple and convenient method template-wetting process. Porous alumina membranes were prepared by 2 step anodic oxidation as the template. To improve wetting properties and make low surface energy, BLT solution was mixed with polymer. Polymer was removed completely during annealing. After completely etching the template in 30 wt% KOH solution, we demonstrate that BLT nanotubes with a diameter of 200 nm can be fabricated. Grain growth process of BLT nanotubes during baking, and furnace annealing was examined by FE-SEM and XRD.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.34-35
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• 2000

A Y-branch phase modulator made of an electro-optic(EO) polymer has been designed and fabricated. An EO polymer, PMMA-DR1, is used for the core layer, and UV-curable polymers, UV-15 and UV-15 LV, for the cladding layers. The rib type polymeric waveguides are fabricated by the reactive ion etching method and their EO effects are obtained by the poling process. The optical properties of the fabricated phase modulator are as follows: the halfwave voltage, $V_{\pi}$, is 25 V, the insertion loss of TM mode is 13.8 dB, and the intensity modulation is 0.17 % (V).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.823-827
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• 2005

Barrier ribs in the plasma display panel (PDP) function to maintain the discharge space between the glass plates as well as to prevent optical crosstalk. Patterning of barrier ribs is one of unique processes for making PDP. Barrier ribs could be formed by screen-printing, sand blasting, etching, and photolithographic process. In this work photosensitive barrier rib pastes were prepared by incorporating binder polymer, solvent, functional monomers photoinitiator, and barrier rib powder of which surface was treated with fumed silica particles. Studies on the function of materials for the barrier rib paste were undertaken. After optimization of paste formulation and photolithographic process, it was applied to the photosensitive barrier rib green sheet and was found that photolithographic patterning of barrier ribs could be formed with good resolution up to $110{\mu}m$ height and $60{\mu}m$ width after sintering.

• 한국신뢰성학회지:신뢰성응용연구
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• 제17권1호
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• pp.66-71
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• 2017

Purpose: Polymer capacitors are known to have very high reliability as compared with liquid electrolytic capacitors, but their capacity has been reported to decrease in charge and discharge at low temperature. The purpose of this study to clarify these characteristics. Methods: In order to clarify these characteristics, charging-discharging tests were carried out for 200 hours with three different capacities and at 5 different temperature from $5^{\circ}C$ to $100^{\circ}C$. Results: As a result of the test, it was confirmed that the capacity of the polymer capacitor was decreased with higher capacity and lower temperature. Conclusion: Such a failure phenomenon was caused by the shrinkage and expansion characteristics of the polymer used therein, it is presumed that this failure phenomenon is due to the complex pore structure made by etching.

• 한국재료학회지
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• 제1권4호
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• pp.214-220
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• 1991

실리콘 산화막을 $CHF_{3/}C_2F_6$ 혼합가스를 사용하여 반응성이온 건식식각을 행할 때 실리콘 표면에 형성되는 잔류막과 손상층을 X-선 광전자 분광기(XPS)와 이차이온 질량 분석기(SIMS)를 사용, 연구하였다. 실리콘, 탄소, 산소 및 불소의 angle-resolved XPS분석기술을 이용한 비파괴적 화학결합상태의 깊이분포 분석을 통하여 잔류막의 표면부에 O-F 결합이 존재하며 잔류막은 주로 탄소와 불소의 결합체인 C-F 플리머로 구성되어져 있고 Si-O, Si-C 및 Si-F 결합 등이 존재함을 알았다. 손상층은 실리콘 표면에서 약 60nm 깊이까지 탄소와 불소의 침투에 의해 형성되어져 있음을 알았다.

• 한국표면공학회지
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• 제39권3호
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• 한국진공학회지
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• 제7권2호
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• pp.155-160
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• 1998

256M DRAM급에 해당하는 0.25$\mu\textrm{m}$의 회로선 폭을 가공하기 위해 Arc layer & DUV resist 사용이 필수적이다. Poly-Si 식각시 Arc layer 적용여부 및 resist 종류에 따른 차이 를 TCP-9408 etcher(Lam Research Co.)에서 $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr 3가지 gas chemistry 를 변화시키면서 조사하였다. 동일한 식각 조건에서 DUV resist사용의 경우에 I-line resist 에 비해 식각 profile이 profile이 positive하고 CD gain도 크게 나왔다. 이것은 resist손실에 의한 polymer생성의 증가가 식각시 측벽 보호막을 강화시키기 때문이다. Arc layer 적용의 경우 Arc layer 식각시 생기는 fluorine계 polymer가 poly-Si 식각시 mask역할을 하므로 CD gain이 증가하는 것으로 나타났다. Gas chemistry에 의한 영향은 $Cl_2/O_2$의 경우가 식각 시 polymer형성을 촉진시켜 positive profile 및 CD gain을 초래하였다. $Cl_2$/HBr의 경우에는 profile이 vertical 하였고 CD gain도 거의 없었다. 또한 dense pattern 과 isolated pattern 사이의 profile 및 CD 차이도 가정 작게 나타났다. HBr gas 사용이 식각시 pattern density 에 따른 측벽 보호막 형성의 불균일성을 최소화 시켜 양호한 특성을 보여주었다.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.915-918
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• 2010

In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

• 한국정밀공학회지
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• 제22권1호
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• pp.199-206
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• 2005

Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.