• Applied Chemistry for Engineering
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• 제2권2호
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• pp.127-137
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• 1991

The dissociation and partial oxidation of $CH_3OH$ on polycrystalline $MoO_3$ powder catalyst were studied using thermal desorption spectrometry(TDS) under high vacuum condition. $CH_3OH$ was dissociatively adsorbed on $MoO_3$ in the forms of surface methoxy($-OCH_3$) and atomic hydrogen(-H). $CH_3OH$ desorbed at 425 K via the re-association of methoxy and adsorbed hydrogen atom, and HCHO desorbed at 545 K through the bond breakage of C-H in methoxy. Water TDS spectra showed two desorption peaks, that is, ${\alpha}$-peak at 428 K and ${\beta}$-peak at 586 K. It was suggested that ${\alpha}$-peak was due to the hydroxyl formed on $MoO_3$ surface during the dissociation of $CH_3OH$, and that ${\beta}$-peak was from the association of lattice oxygen and surface hydrogen atom formed by the bond breakage of C-H in methoxy. Pre-adsorbed oxygen on the surface of $MoO_3$ catalyst increased the amount of adsorption of $CH_3OH$ by promoting the dissociation of $CH_3OH$ on the surface, whereas pre-adsorbed water decreased the amount of adsorption of $CH_3OH$ by blocking of adsorption sites for $CH_3OH$.

• Journal of Sensor Science and Technology
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• 제4권3호
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• pp.60-70
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• 1995

Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.

• Journal of the Korean Magnetics Society
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• 제15권2호
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• pp.81-84
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• 2005

The origin for the charge disproportionation (CD) transition in polycrystalline $La_{1/3}Sr_{2/3}FeO_{2.96}$ was examined using X-ray diffraction and the external field $M\ddot{o}ssbauer$ssbauer spectroscopy. In order to see how the external magnetic field affects the CD state above its transition temperature, an external magnetic field of up to 6 T was applied either parallel or perpendicular to the $\gamma-ray$ direction with the sample temperature fixed at 225 K, which was above the CD transition temperature. Without an external magnetic field, a completely paramagnetic singlet was obtained in the temperature range of the averaged valence state above the transition temperature, which was interpreted as coming from the average valence $Fe^{3.6+}$. In the longitudinal geometry, a magnetic Zeeman with its intensity ratio 3:0:1:1:0:3 is superimposed to the central singlet. In the transverse geometry, however, the central singlet disappears and only a magnetic component with its intensity ratio 3:4:1:1:4:3 emerges. The existence of a singlet is understood as an evidence of the fast electron-transfer among Fe ions. Since the singlet still exists under the magnetic field, the application of an external field has little effect on the conduction mechanism of hopping electrons.

• Journal of the Korean Magnetics Society
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• 제17권1호
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• pp.47-50
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• 2007

[ $ZnCr_2O_4$ ] shows geometrically frustrated magnet. Recently, $CoCr_2O_4$ has been investigated for multiferroic property and dielectric anomalies by spin-current model. Polycrystalline $CoCr_2O_4$ and $CoCrFeO_4$ compounds was prepared by wet-chemical process. Crystallographic and magnetic properties of $CoCr_2O_4$ and $CoCrFeO_4$ were investigate by using the x-ray diffractometer(XRD), vibrating sample magnetometer(VSM), superconducting quantum interference device magnetometer(SQUID), and $M\"{o}ssbauer$ spectroscopy. The crystal structure was found to be single-phase cubic spinel with space group of Fd3m. The lattice constants of $CoCr_2O_4$ and $CoCrFeO_4$ $a_0$ were determined to be 8.340 and 8.377 ${\AA}$, respectively. The ferrimagnetic transition temperature for the both samples were observed at 97 K and 320 K. The $M\"{o}ssbauer$ absorption spectra at 4.2 K show that the well developed two sextets are superposed with small difference of hyperfine field($H_{hf1}=507\;and\;H_{hf2}=492\;kOe$). Isomer shift values($\delta$) of the two sextets are found to be 0.33 and 0.34 mm/s relative to the Fe metal, respectively, which are consistent with the high spin $Fe^{3+}$ charge state.

• Korean Journal of Materials Research
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• 제20권10호
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• pp.518-523
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• 2010

In this study, partially stabilized zirconia was synthesized using a chemical $Y_2O_3$ stabilizer and hydrothermal method. First, $YCl_3-6H_2O$ and $ZrCl_2O-8H_2O$ was dissolved in distilled water. Y-TZP (a $Y_2O_3$-doped toughened zirconia polycrystalline precursor) was also prepared by conventional co-precipitates in the presence of an excess amount of $NH_4OH$ solution under a fixed pH of 12. The Y-TZP precursors were filtered and repeatedly washed with distilled water to remove $Cl^-$ ions. $ZrO_2$-Xmol%$Y_2O_3$ powder was synthesized by a hydrothermal method using Teflon Vessels at $180^{\circ}C$ for 6 h of optimized condition. The powder added with the Xmol%- $Y_2O_3$ (X = 0,1,3,5 mol%) stabilizer of the $ZrO_2$ was synthesized. The crystal phase, particle size, and morphologies were analyzed. Rectangular specimens of $33mm{\times}8mm{\times}3$ mm for three-point bend tests were used in the mechanical properties evaluation. A teragonal phase was observed in the samples, which contains more than 3 mol% $Y_2O_3$. The $3Y-ZrO_2$ agglomerated particle size was measured at $7.01{\mu}m$. The agglomerated particle was clearly observed in the sample of 5 mol % $Y_2O_3-ZrO_2$, and and the agglomerated particle size was measured at 16.4 um. However, a 20 nm particle was specifically observed by FE-SEM in the sample of 3 mol% $Y_2O_3-ZrO_2$. The highest bending fracture strength was measured as 321.3 MPa in sample of 3 mol% $Y_2O_3-ZrO_2$.

• Journal of the Optical Society of Korea
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• 제19권6호
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• pp.705-710
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• 2015

The fabrication process of thin boron-doped nanocrystalline diamond (B-NCD) microelectrodes on fused silica single mode optical fiber cladding has been investigated. The B-NCD films were deposited on the fibers using Microwave Plasma Assisted Chemical Vapor Deposition (MW PA CVD) at glass substrate temperature of 475 ℃. We have obtained homogenous, continuous and polycrystalline surface morphology with high sp³ content in B-NCD films and mean grain size in the range of 100-250 nm. The films deposited on the glass reference samples exhibit high refractive index (n=2.05 at λ=550 nm) and low extinction coefficient. Furthermore, cyclic voltammograms (CV) were recorded to determine the electrochemical window and reaction reversibility at the B-NCD fiber-based electrode. CV measurements in aqueous media consisting of 5 mM K₃[Fe(CN)₆] in 0.5 M Na₂SO₄ demonstrated a width of the electrochemical window up to 1.03 V and relatively fast kinetics expressed by a redox peak splitting below 500 mV. Moreover, thanks to high-n B-NCD overlay, the coated fibers can be also used for enhancing the sensitivity of long-period gratings (LPGs) induced in the fiber. The LPG is capable of measuring variations in refractive index of the surrounding liquid by tracing the shift in resonance appearing in the transmitted spectrum. Possible combined CV and LPG-based measurements are discussed in this work.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• Korean Journal of Materials Research
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• 제10권12호
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Korean Journal of Materials Research
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• 제22권11호
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• pp.631-635
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• 2012

Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{\circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{\circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{\circ}C$.

• Korean Journal of Materials Research
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• 제9권11호
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.