• Title/Summary/Keyword: polycrystalline

Search Result 1,290, Processing Time 0.027 seconds

Preparation and characterization of Zinc Oxide films deposition by (PVD) (PVD 코팅법에 의한 ZnO제조 및 특성)

  • Kim, Sung Jin;Pak, Hunkyun
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2010.06a
    • /
    • pp.95.1-95.1
    • /
    • 2010
  • Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

  • PDF

Impedance Spectroscopy Models for X5R Multilayer Ceramic Capacitors

  • Lee, Jong-Sook;Shin, Eui-Chol;Shin, Dong-Kyu;Kim, Yong;Ahn, Pyung-An;Seo, Hyun-Ho;Jo, Jung-Mo;Kim, Jee-Hoon;Kim, Gye-Rok;Kim, Young-Hun;Park, Ji-Young;Kim, Chang-Hoon;Hong, Jeong-Oh;Hur, Kang-Heon
    • Journal of the Korean Ceramic Society
    • /
    • v.49 no.5
    • /
    • pp.475-483
    • /
    • 2012
  • High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

Adherence of Salivary Proteins to Various Orthodontic Brackets (다양한 교정용 브라켓 표면에 부착하는 타액단백질에 관한 연구)

  • Ahn, Sug-Joon;Ihm, Jong-An;Nahm, Dong-Seok
    • The korean journal of orthodontics
    • /
    • v.32 no.6 s.95
    • /
    • pp.443-453
    • /
    • 2002
  • The principal aims of this study were to identify the composition of salivary pellicles formed on various orthodontic brackets and to obtain a detailed information about the protein adsorption profiles from whole saliva and two major glandular salivas. Four different types of orthodontic brackets were used. All were upper bicuspid brackets with a $022{\times}028$ slot Roth prescription; stainless steel metal, monocrystalline sapphire, polycrystalline alumina, and plastic brackets. Bracket pelicles were formed by the incubation of orthodontic brackets with whole saliva, submandibular-sublingual saliva, and parotid saliva for 2 hours. The bracket pellicles were extracted and confirmed by employing sodium dodecyl sulfatepolyacrylamide gel electrophoresis, Western transfer methods, and immunodetection. The results showed that low-molecular weight salivary mucin, ${\alpha}-amylase$, secretory IgA (sIgA), acidic proline-rich proteins, and cystatins were attached to all of these brackets regardless of the bracket types. High-molecular weight mucin, which promotes the adhesion of Streptococcus mutans, did not adhere to uy orthodontic brackets. Though the same components were detected in all bracket pellicles, however, the gel profiles showed qualitatively and quantitatively different pellicles, according to the origins of saliva and the bracket types. In particular, the binding of sIgA was more prominent in the pellicles from parotid saliva and the binding of cystatins was prominent in the pellicles from the form plastic brackets. This study indicates that numerous salivary proteins adhere to the orthodontic brackets and these salivary proteins adhere selectively according to bracket types and the types of the saliva.

The Effect of Veneering Techniques on the Color Parameters of Y-TZP Based All Ceramic Restoration of Varying Ceramic Core Thickness (지르코니아 코어 두께에 따른 전부도재관의 상부도재 축성방법이 보철물 색조에 미치는 영향)

  • Huh, Sung-Yoon;Son, Ho-Jung;Kim, Hae-Young;Kim, Jae-Hong
    • Journal of dental hygiene science
    • /
    • v.12 no.2
    • /
    • pp.123-129
    • /
    • 2012
  • The aim of study was to compare the color parameters and mean color difference of porcelain specimens by different veneering technique in order to examine the effect of veneering technique on esthetics of yttria-stabilized tetragonal zirconia polycrystalline(Y-TZP) all ceramic restoration. Three groups of square-shaped core ceramic specimens(14mm in diameter and 0.3, 0.5, 0.7 mm) and two groups of veneering ceramic specimen were prepared for analysis. Color parameter($L^*,a^*,b^*$) and color difference of zirconia core squares and core-veneer specimens were measured with ShadeEye $NCC^{(R)}$ spectrophotometer, respectively. Mean color difference(${\Delta}E^*$)were calculated using color difference formula. Two-way analysis of variance(ANOVA) combined with a Tukey multiple-range test were used to analysis the data(${\alpha}=0.05$). ${\Delta}E^*$ values were not significantly affected by core thickness and veneering porcelain(p=0.083). The color differences(${\Delta}E^*$) of core-veneer specimens with 0.5, 0.7 mm-A1,A2,A3.5 shade were mostly below 3.7 which was within the clinically acceptable range, while color differences between 0.3 mm-A1,A2 showed more than 3.7. All-ceramic system has color characteristics that clinicians have to consider when selecting materials. Also, manufacturers of different porcelain systems must make every effort to achieve color reproducibility.

Electrochemical and Optical Studies on the Passivation of Nickel (니켈의 부동화에 관한 전기화학적 및 광학적 연구)

  • Dong Jin Kim;Woon-Kie Paik
    • Journal of the Korean Chemical Society
    • /
    • v.26 no.6
    • /
    • pp.369-377
    • /
    • 1982
  • The technique of combined-measurement of reflectance and ellipsometric parameters was used for studying the anodic film formed on nickel surface in basic solutions. An ellipsometer was automated for transient measurements by way of modulating the plane-polarized light with the Faraday effect. Surface film was formed electrochemically by applying a potential step from the reduction potential range to the passivation range on a polished, high-purity, polycrystalline nickel specimen. From that instant, the changes in the reflectance(r) and the ellipsometric parameters(${\Delta},{\Psi}$) of the surface film were recorded by the automatic ellipsometer. Three exact simultaneous equations including these optical signals, ${\Delta},{\Psi}$ and r were solved numerically with a computer in order to determine the optical properties, n, k, and the thickness, ${\tau}$, of the surface film. From the computed results which showed dependence on pH and time, it was found that passivation of nickel can be effectively attained by surface film thinner than $15{\AA}$ and this passivation film has a small optical absorption coefficient. It seemed that a high pH environment enhances the rate of passivation and is favorable for a denser structure of the surface film. The experimental evidence is in accordance with the hypothesis that the composition of the passive film can be approximated by $Ni(OH)_2$ in the early stage of passivation and that as time passes the composition changes partially toward that of NiO through dehydration.

  • PDF

Water absorption characteristics of artificial lightweight aggregates preparedby pre-wetting (프리웨팅된 인공경량골재의 흡수 특성)

  • Kim, Yoo-Taek;Jang, Chang-Sub;Ryu, Yug-Wang
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.21 no.2
    • /
    • pp.82-86
    • /
    • 2011
  • Lightweight aggregate which is composed of sintered polycrystalline materials usually has a certain portion of pores inside of it. Because of such a structural characteristics, it tends to that movement of water in aggregate shows an abnormal behavior against the change of outside environment. In general, water movement behavior is controlled by porosity, distribution of pore size; however, dense surface layer will also affect water movement behavior in case of artificially sintered aggregates. Factors affecting water movement behavior in the aggregate are pore distribution, pore shape, pre-wetting method, etc. In this study, absorption characteristics of aggregate under the pressure and absorption rate according to water dipping time are analyzed for the basis of pressure pumping of lightweight concrete. Two kinds of aggregates were used for the test: one is made by 'L' company in Germany and the other is of our own made at the pilot plant in Kyonggi University. Absorption rate of aggregate is measured according to water dipping time, vacuum pressure, and quenching condition. Absorption rate of aggregate with $300^{\circ}C$ quenching is higher than that of aggregate with 24 hr water dipping. Generally the more vacuum the higher water absorption rate. Water absorption rate of 'L' aggregate under -300 mmHg is 54 % higher than that of aggregate with 24 hr water dipping; however, only 2 % increase in water absorption was measured for the K622 and K73 which were of our own.

Nearly single crystal, few-layered hexagonal boron nitride films with centimeter size using reusable Ni(111)

  • Oh, Hongseok;Jo, Janghyun;Yoon, Hosang;Tchoe, Youngbin;Kim, Sung-Soo;Kim, Miyoung;Sohn, Byeong-Hyeok;Yi, Gyu-Chul
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.286-286
    • /
    • 2016
  • Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

  • PDF

Fracture resistance of ceramic brackets to arch wire torsional force (토오크 양에 따른 세라믹 브라켓의 파절 저항성)

  • Han, Jung-Heum;Chang, Minn-Hii;Lim, Yong-Kyu;Lee, Dong-Yul
    • The korean journal of orthodontics
    • /
    • v.37 no.4
    • /
    • pp.293-304
    • /
    • 2007
  • The purpose of this study was to estimate the fracture resistance of commercially available ceramic brackets to torsional force exerted from arch wires and to evaluate the characteristics of bracket fracture. Methods: Lingual root torque was applied to maxillary central incisor brackets with 0.022-inch slots by means of a $022\;{\times}\;028-inch$ stainless steel arch wire. A custom designed apparatus that attached to an Instron was used to test seven types of ceramic brackets (n = 15). The torque value and torque angle at fracture were measured. In order to evaluate the characteristics of failure, fracture sites and the failure patterns of brackets were examined with a Scanning Electron Microscope. Results: Crystal structure and manufacturing process of ceramic brackets had a significant effect on fracture resistance. Monocrystalline alumina (Inspire) brackets showed significantly greater resistance to torsional force than polycrystalline alumina brackets except InVu. There was no significant difference in fracture resistance during arch wire torsional force between ceramic brackets with metal slots and those without metal slots (p > 0.05). All Clarity brackets partially fractured only at the incisal slot base and the others broke at various locations. Conclusion: The fracture resistance of all the ceramic brackets during arch wire torsion appears to be adequate for clinical use.

Analysis on the Frumkin Adsorption Isotherm of the Over-Potentially Deposited Hydrogen (OPD H) at the Polycrystalline Ni | Alkaline Aqueous Electrolyte Interface Using the Phase-Shift Method

  • Chun Jang H.;Jeon Sang K.
    • Journal of the Korean Electrochemical Society
    • /
    • v.4 no.4
    • /
    • pp.146-151
    • /
    • 2001
  • The Frumkin adsorption isotherm of the over-potentially deposited hydrogen (OPD H) for the cathodic $H_2$ evolution reaction (HER) at the poly-Ni|0.05M KOH aqueous electrolyte interface has been studied using the phase-shift method. The behavior of the phase shift $(0^{\circ}\leq{\phi}\leq90^{\circ})$ for the optimum intermediate frequency corresponds well to that of the fractional surface coverage $(1\geq{\theta}\geq0)$ at the interface. The phase-shift method, i.e., the Phase-shift profile $(-{\phi}\;vs.\;E)$ for the optimum intermediate frequency, can be used as a new method to estimate the Frumkin adsorption isotherm $(\theta\;vs.\;E)$ of the OPD H for the cathodic HER at the interface. At the poly-Ni|0.05M KOH aqueous electrolyte interface, the rate (r) of change of the standard free energy of the OPD H with $\theta$, the interaction parameter (g) for the Frumkin adsorption isotherm, the equilibrium constant (K) for the OPD H with $\theta$, and the standard free energy $({\Delta}G_{\theta})$ of the OPD H with ${\theta}$ are $24.8kJ mol^{-1},\;10,\;5.9\times10^{-6}{\leq}K{\leq}0.13,\;and\;5.1\leq{\Delta}G_{\theta}\leq29.8kJ\;mol^{-1}$. The electrode kinetic parameters $(r,\;g,\;K,\;{\Delta}G_{\theta})$ depend strongly on ${\theta} (0{\leq}{\theta}{\leq}1)$.

Enhancement of photoluminescence and electrical properties of Ga doped ZnO thin film grown on $\alpha$-$Al_2O_3$(0001) single crystal substrate by RE magnetron sputtering through rapid thermal annealing (RF 마그네트론 스퍼터링 법으로 사파이어 기판 위에 성장시킨 ZnO: Ga 박막의 RTA 처리에 따른 photoluminescence 특성변화)

  • Cho, Jung;Na, Jong-Bum;Oh, Min-Seok;Yoon, Ki-Hyun;Jung, Hyung-Jin;Choi, Won-Guk
    • Journal of the Korean Vacuum Society
    • /
    • v.10 no.3
    • /
    • pp.335-340
    • /
    • 2001
  • $Ga_2O_3$(1 wt%)-doped ZnO(GZO) thin films were grown on ${\alpha}-Al_2O_3$ (0001) by rf magnetron sputtering at $510^{\circ}C$, whose crystal structure was polycrystalline. As-grown GZO thin film shows poor electrical properties and photoluminescence (PL) spectra. To improve these properties, GZO thin films were annealed at 800-$900^{\circ}C$ in $N_2$atmosphere for 3 min. After the rapid thermal annealing(RTA), deep defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resisitivity of $2.6\times10^{-4}\Omega$/cm with $3.9\times10^{20}/\textrm{cm}^3$ carrier concentration and exceptionally high mobility of 60 $\textrm{cm}^2$/V.s. These improved physical properties are explained in terms of translation of doped-Ga atoms from interstitial to substitutional site.

  • PDF