• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1997-1999
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• 2002

고분자 주쇄(Main chain)의 소수성을 가지는 플루오르 그룹을 배제시킨 습도 민감성 폴리이미드를 합성 및 이미드화 하였고, 이를 이용한 초고참도 습도 센서를 제작 및 측정하였다. 사용된 폴리이미드는 다이아민계로 Oxydianyline(ODA)와 다이안하이드라이드계로 Pyromellitic dianhydried(PMDA)를 유기용매 Dimethyla cetamide(DMAc) 하에서 폴리이미드 전구체 (Polyamic acid)를 합성하였으며, 진공 및 승온 조건에서 유기용매를 제거하여 이미드화(Imidization) 반응을 진행시켜 제조하였다. 본 습도 센서는 정전용량형 고감도 습도 센서로 디자인되었으며 실리콘 웨이퍼상에서 일반적인 반도체 공정을 이용하여 구현하였다. 본 습도 센서는 센서 크기와 유효면적, 감습층의 두께를 주요 변수로 설정하였으며 이에 따른 습도 민감성 효과를 평가 및 분석하였다. 측정 결과 유효면적 70%, 감습층 두께 $1.1{\mu}m$ 로 제작된 습도 센서는 상대숨도$20%{\sim}90%$ 영역에서 캐패시턴스와 선형적 상관관계를 보여주고 있으며, 습도 민감도는 3.9 pF/%RH 클 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• Polymer(Korea)
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• v.38 no.5
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• pp.632-639
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• 2014

2,7-Dihydroxynaphthalene bis(trimellitate anhydride) (2,7-TA) was synthesized from trimellitic anhydride chloride and 2,7-dihydroxynaphthalene. Copolyimides (Co-PI) containing ester group were synthesized from 2,7-TA, pxylylenediamine, and 2,2'-bis(trifluoromethyl)benzidine (TFB). The Co-PI films were obtained from poly(amic acid) by solution casting through thermal imidization on a glass plate. The thermal property, gas permeation, and optical transparency of the Co-PI films with various TFB monomer contents were investigated. These Co-PIs could be solution-cast into a flexible and tough film. The cast Co-PI films exhibited high optical transparency with a cut-off wavelength of 370~395 nm in UV-vis. absorption and a low yellow index value of 3.55~7.63. The thermal property of Co-PI films increased linearly with increasing TFB content. However, the oxygen permeation and optical transparency of the Co-PI films was found to worsen with increasing TFB content.

• Polymer(Korea)
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• v.37 no.5
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• pp.618-624
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• 2013

Hydroquinone bis(trimellitic anhydride) (HQ-TA) was synthesized from trimellitic anhydride chloride and hydroquinone. Poly(amic acid)s (PAAs) were synthesized by reacting a HQ-TA with six different diamines, which were cyclized to yield polyimides (PIs) containing ester linkages by chemical- and thermal-imidization methods. The various PIs were synthesized from structurally different aromatic diamines. The glass transition temperatures ($T_g$) were in the range of 167-$215^{\circ}C$, and the decomposition temperatures (${T_D}^i$) were in the range of $364-451^{\circ}C$. The maximum improvements in coefficient of thermal expansion (CTE) and barrier to oxygen permeation were observed in PIs using TFB (3.23 $ppm/^{\circ}C$) and 4,4-ODA (< $10^{-2}cc/m^2/day$), respectively. The PI films possessed a transmittance of 65-89% at 500 nm and had a yellowish color with a yellow index (YI) of 3.01-69.52.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.21-26
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• 2008

We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.

• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.515-522
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• 1999

Asymmetric polyetherimide membrane were prepared by phase inversion method, and the effects of NaOH concentration and reaction time on the morphology change of the polyetherimide membranes were studied. The morphology of skin layers varied from dense structure to sphere structure with increasing concentration of modification solution. The thickness of dense layer increased with increasing reaction time. However, when either the concentration of modifying solution was very high or the reaction time was very long, the dense layers of the asymmetric membrane were disappeared. From these results, it was found that the surface morphology of the asymmetric polyetherimide membranes depended strongly on the modification conditions such as concentration of modification solution and reaction time. These results might be explained by the hydrolysis reaction of polyetherimide into polyamic acid by the NaOH solution.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1719-1721
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• 1996

This paper describes the thermally stimulated current(TSC) of PAAS spin coated film and the electrical properties of pre TSC measurement and after TSC test specimens. The TSC measurement were performed from room temperature to about $280^{\circ}C$ and the temperature was increased by $5^{\circ}C/min$ automatically. It shows that two peaks of TSC are observed at about $50^{\circ}C$ and about $160^{\circ}C$. Result of this measurement indicate that one peak; $50^{\circ}C$ is from alkyl group; other peak at $160^{\circ}C$ is due to alkyl and C-O group of PAAS. Addition to larger peak at about $160^{\circ}C$ is due to dipolemoment of PAAS film. This result is proved by DSC measurement of PAAS film. The electrical properties of pre and after TSC were measured by currant-voltage(l-V) characteristics. The current-voltage characteristics after TSC specimens are increased the conductivity. The electrical properties of pre-after TSC measurement specimen is in the middle of imidization of PAAS. Because of this result a thermal imidization was performed at $300^{\circ}C$ for 1 hour.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.496-501
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• 1995

The N $O_{2}$ gas-detection characteristics were investigated using the functional organic Langmuir-Blodgett (LB) films of Copper-tetra-tert-butylphthalocyanine (CuTBP), Dilithium phthalocyanine (Li$_{2}$Pc), N-docosylpyridinium TCNQ(C$_{22}$Py(TCNQ)), Polyamic acid alkylamine salts (PAAS). The optimum conditions for a film deposition were obtained through a study of .pi.-.ALPHA. isotherms and the deposited film status was confirmed by electrical and optical methods such as UV/visible absortion spectra, thickness measurements by ellipsometry, and electrical capacitances. A response of the LB films to the N $O_{2}$ gas was measured by a change of the electrical conductivities when the film is exposed to the gases. The CuTBP LB film shows the biggest change of the electrical conductivities when it is exposed to the N $O_{2}$ gases. And the order of gas-detection performance is the following;Li$_{2}$Pc, $C_{22}$Py(TCNQ), and PAAS LB films. Especially, the CuTBP and Li$_{2}$Pc LB films not only show the bigger change in the electircal conductivities when exposed to the gas, but return to the original state when the gas is desorbed.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.240.2-240.2
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• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

• Applied Chemistry for Engineering
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• v.26 no.6
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• pp.674-680
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• 2015

A solvent-soluble polyimide (PI) polymeric binder was synthesized by a two-step reaction for silicon (Si) anodes for lithium-ion batteries. Polyamic acid was first prepared through ring opening between two monomers, bicyclo[2,2,2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride (BCDA) and 4,4-oxydianiline (ODA), followed by condensation reaction. Using the synthesized PI polymeric binder (molecular weight = ~10,945), the coating slurry was then prepared and Si anode was fabricated. For the control system, Si anode based on polyvinylidene fluoride (PVDF, molecular weight = ~350,000) having the same constituent ratio was prepared. During precycling, PI polymeric binder revealed much improved discharge capacity ($2,167mAh\;g^{-1}$) compared to that of using PVDF polymeric binder ($1,740mAh\;g^{-1}$), while the Coulombic efficiency of two systems were similar. PI polymeric binder improved the cycle retention ability during cycles compared to that of using PVDF, which is attributed to an improved adhesion property inside Si anode diminishing the dimensional stress during Si volume changes. The adhesion property of each polymeric binder in Si anode was confirmed by surface and interfacial cutting analysis system (SAICAS) (Si anode based on PI polymeric binder = $0.217kN\;m^{-1}$ and Si anode based on PVDF polymeric binder = $0.185kN\;m^{-1}$).