• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.170-170
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• 2000

Synthetic polymers such as polyimide, polycarbonate, and poly(methyl methacrylate) are long chain molecules which consist of carbon, hydrogen, and heteroatom linked together chemically. Recently, polymer surface can be modified by using a high energy ion beam process. High energy ions are introduced into polymer structure with high velocity and provide a high degree of chemical bonding between molecular chains. In high energy beam process the modified polymers have the highly crosslinked three-dimensionally connected rigid network structure and they showed significant improvements in electrical conductivity, in hardness and in resistance to wear and chemicals. Polyimide films (Kapton, types HN) with thickness of 50~100${\mu}{\textrm}{m}$ were used for investigations. They were treated with two different surface modification techniques: Plasma Source Ion Implantation (PSII) and conventional Ion Implantation. Polyimide films were implanted with different ion species such as Ar+, N+, C+, He+, and O+ with dose from 1 x 1015 to 1 x 1017 ions/cm2. Ion energy was varied from 10keV to 60keV for PSII experiment. Polyimide samples were also implanted with 1 MeV hydrogen, oxygen, nitrogen ions with a dose of 1x1015ions/cm2. This work provides the possibility for inducing conductivity in polyimide films by ion beam bombardment in the keloelectronvolt to megaelectronvolt energy range. The electrical properties of implanted polyimide were determined by four-point probe measurement. Depending on ion energy, doses, and ion type, the surface resistivity of the film is reduced by several orders of magnitude. Ion bombarded layers were characterized by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), XPS, and SEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.292.2-292.2
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• 2013

Graphene, a two-dimensional graphite material consisting of sp2-hybridized carbons. The properties of graphene such as extremely high carrier mobility, high thermal conductivity, low resistivity, large specific make it a promising materail of divices and material. Typically, poly (methyl methacrylate) (PMMA) is used when graphene transfer to other substrates. To remove PMMA on graphene, people used to dip the graphene into the acetone. However, it is known that the remove of PMMA on the graphene is difficult to completely using the acetone. Therefore, to remove the PMMA on the graphene surface, many research groups have employed various methods such as the thermal treatment, photothermal method, and other solvent. Nevertheless, a part of PMMA still remain on graphene surface. Usually, to observe the residual PMMA on graphene surface, topography of graphene surface scanned by atomic force microscopy is used. However, in that case, we can not distinguish PMMA and other particles. In this study, to confirm the residual PMMA on graphene surface, we employed novel measurement technique which is available to distinguish PMMA and other particles by means of photothermal effect.

• Bulletin of the Korean Chemical Society
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• v.2 no.4
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• pp.142-147
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• 1981

A blend polymeric system composed of poly(methyl methacrylate) (PMMA or PM) and polystyrene (PS) dissolved in chloroform was rheologically studied. The viscosities ${\eta}_{bl}$ of the blend system with various blending ratios ${\chi}$ changing from zero (pure PS solution) to unity (pure PMMA solution) were measured at $25{\circ}C$ as a function of shear rates ${\dot{s}}$ by using a Couette type viscometer. ${\eta}_{bl}$ at a given ${\dot{s}}$ decreased exponentially with ${\chi}$ reaching asymptotic constant value of ${\eta}_{bl}$ ; ${\eta}_{bl}$ at a given ${\chi}$ is greater at a smaller ${\dot{s}}$. These results are explained by using Ree-Erying's theory of viscosity, ${\eta}_{bl}=(x_1{\beta}_1/{\alpha}_1)_{b}_1＋ (x_2{\beta}_2/{\alpha}_2)_{bl}[sinh^{-1}{\beta}_2(bl) {\dot{s}}]/{\beta}_2(bl){\dot{s}}$. The Gibbs activation energy ${\Delta}G_i^\neq$(i = 2 for non-Newtonian units) entering into the intrinsic relaxation time ${\beta}$ is represented by a linear combination ${\Delta}G_i^\neq(bl) ={\chi}{\Delta}G_i^{\neq}_{iPM}+(1-{\chi}){\Delta}G_i^{\neq}_{iPS}$;the intrinsic shear modulus$[[\alpha}_i]^{-1}$ is also represented by $[{\alpha}_i(bl)]^{-1}={\chi}[{\alpha}_{iPM}]^{-1}+(1-{\chi})[{\alpha}_{iPS}]^{-1}$ and the fraction of area on a shear surface occupied by the ith flow units $x_i(bl)$ is similarly represented, i.e., $x_i(bl) = {\chi}x_{iPM}+(1-{\chi})x_{iPS}$. By using these ideas the Ree-Eyring equation was rewritten which explained the experimental results satisfactorily.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.77-82
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• 2021

Using a multi-array needle module developed for coating of high-density cylindrical microlens array (C-MLA), we have fabricated an anti-Moiré filter for LED screens. The Moiré phenomenon appears due to the interference between the array pattern of image sensors in a camera and the non-emission area (grid pattern) of a LED screen. To suppress it, we have employed poly(methyl methacrylate) (PMMA) and coated it on a glass substrate in the form of a grid and non-grid (parallel lines). We have rotated the needle module in order to increase the number of C-MLAs. With this scheme, we have fabricated the 150 mm × 150 mm anti-Moiré filters where 836 microlens lines are formed. They show the average width of 255.4 ㎛, the average distance between CMLs of 94.6 ㎛, and C-MLA width non-uniformity of 4.7%. We have shown that the Moiré patterns still appear in the presence of the parallel (non-grid)-type filter, whereas they disappeared completely by the grid-type filter. It is due to the fact that the Moiré patterns are diffused more effectively by the grid-type C-MLA.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.70-76
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• 2021

A cylindrical microlens (CML) has been widely used as an optical element for organic light-emitting diodes (OLEDs), light diffusers, image sensors, 3D imaging, etc. To fabricate high-performance optoelectronic devices, the CML with high aspect ratio is demanded. In this work, we report on facile solution-based processes (i.e., slot-die and needle coatings) to fabricate the CML using poly(methyl methacrylate) (PMMA). It is found that compared with needle coating, slot-die coating provides the CML with lower aspect ratio due to the wide spread of solution along the hydrophilic head lip. Although needle coating provides the CML with high aspect ratio, it requires a high precision needle array module. To demonstrate that the aspect ratio of CML can be enhanced using slot-die coating, we have varied the molecular weight of PMMA. We can achieve the CML with higher aspect ratio using PMMA with lower molecular weight at a fixed viscosity because of the higher concentration of PMMA solute in the solution. We have also shown that the aspect ratio of CML can be further boosted by coating it repeatedly. With this scheme, we have fabricated the CML with the width of 252 ㎛ and the thickness of 5.95 ㎛ (aspect ratio=0.024). To visualize its light diffusion property, we have irradiated a laser beam to the CML and observed that the laser beam spreads widely in the vertical direction of the CML.

• Korean Journal of Materials Research
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• v.32 no.12
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• pp.522-527
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• 2022

Among efforts to improve techniques for the chemical vapor deposition of large-area and high-quality graphene films on transition metal substrates, being able to reliably transfer these atomistic membranes onto the desired substrate is a critical step for various practical uses, such as graphene-based electronic and photonic devices. However, the most used approach, the wet etching transfer process based on the complete etching of metal substrates, remains a great challenge. This is mainly due to the inevitable damage to the graphene, unintentional contamination of the graphene layer, and increased production cost and time. Here, we report the systematic study of an H₂ bubbling-assisted transfer technique for graphene films grown on Cu foils, which is nondestructive not only to the graphene film but also to the Cu substrate. Also, we demonstrate the origin of the graphene film tearing phenomenon induced by this H₂ bubbling-assisted transfer process. This study reveals that inherent features are produced by rolling Cu foil, which cause a saw-like corrugation in the poly(methyl methacrylate) (PMMA)/graphene stack when it is transferred onto the target substrate after the Cu foil is dissolved. During the PMMA removal stage, the graphene tearing mainly appears at the apexes of the corrugated PMMA/graphene stack, due to weak adhesion to the target substrate. To address this, we have developed a modified heat-press-assisted transfer technique that has much better control of both tearing and the formation of residues in the transferred graphene films.

• Current Optics and Photonics
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• v.7 no.6
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• pp.721-731
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• 2023

This paper studies various roughness parameters, besides waviness, texture, and nonlinear parameters of Bismarck brown Y (BBY)-doped Poly(methyl methacrylate) (PMMA) films based on the computed values of optical limiting (OL) threshold power and nonlinear refractive index. The films' morphology, grain size, and absorption spectra were investigated using atomic force microscopy in conjunction with ultraviolet-visible (UV-Vis) spectrophotometer. The particle size of the films ranged between 4.11-4.51 mm and polymer films showed good homogeneity and medium roughness, ranging from 1.11-4.58 mm. A polymer film's third-order nonlinear optical features were carried out using the Z-scan methodology. The measurements were obtained by a continuous wave produced from a solid-state laser with a 532 nm wavelength. According to the results, BBY has a nonlinear refractive index of 10^-6 cm²/W that is significantly negative and nonlinear. The optical limiting thresholds are roughly 10.29, 13.52, and 18.71 mW, respectively. The shift of nonlinear optical features with the film's concentration was found throughout the experiment Additionally, we found that the polymer samples have outstanding capabilities for restricting the amount of optical power that may be transmitted through them. We propose that these films have the potential to be used in a wide variety of optoelectronic applications, including optical photodetectors and optical switching.

• Applied Chemistry for Engineering
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• v.35 no.3
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• pp.260-265
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• 2024

To synthesize an antistatic material for use in semiconductor wafer transport trays, in-situ polymerization of poly(methyl methacrylate) (PMMA) and polyurethane (PU) incorporating carbon nanotubes was designed and conducted. The newly synthesized composites were evaluated for their thermal and electrical conductivity properties under conditions mimicking commercial device manufacturing processes. Comparative analysis of their respective performances revealed that both PMMA and PU containing carbon nanotubes exhibited enhanced thermal properties and superior electrical conductivity as the nanotube content increased. Morphology of the composites synthesized via in-situ polymerization was confirmed to be excellent through FE-SEM analysis, demonstrating good dispersibility. Both PMMA and PU incorporating carbon nanotubes showed outstanding surface resistance values of 10³ Ω/□, indicating their suitability as antistatic materials for semiconductor applications.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.85-91
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• 2009

There has been a rapid progress for flexible polymer-based MEMS(Microelectromechanical Systems) technology. Polycarbonate (PC) and Poly Methyl Methacrylate (PMMA), so-called acrylic, have many advantages for optical, non-toxic and micro-device application. We studied dry etching of PC and PMMA as a function of % gas ratio in the $O_2/SF_6/CH_4$ temary plasma. A photoresist pattern was defined on the polymer samples with a mask using a conventional lithography. Plasma etching was done at 100 W RIE chuck power and 10 sccm total gas flow rate. The etch rates of PMMA were typically 2 times higher than those of PC in the whole experimental range. The result would be related to higher melting point of PC compared to that of PMMA. The highest etch rates of PMMA and PC were found in the $O_2/SF_6$ discharges among $O_2/SF_6$, $O_2/CH_4$ and $SF_6/CH_4$ and $O_2/SF_6/CH_4$ plasma composition (PC: ${\sim}350\;nm/min$ at 5 sccm $O_2/5$ sccm $SF_6$, PMMA: ${\sim}570\;nm/min$ at 2.5 sccm $O_2/7.5$ sccm $SF_6$). PC has smoother surface morphology than PMMA after etching in the $O_2/SF_6/CH_4$ discharges. The surface roughness of PC was in the range of 1.9$\sim$3.88 nm. However, that of PMMA was 17.3$\sim$26.1 nm.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.372-376
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• 2009

In the modern semiconductor industry, lithography process is used to construct specific patterns. However, due to the decreasing of line width, these days, more and more researchers are interested in PMMA(Poly Methyl Methacrylate) lithography by using e-beam instead of the prior method, PR(Photoresist) lithography by using UV(Ultra-Violet). Additionally, the patterns constructed by lithography are collapsed during the process of cleansing remnants and the resistance against the breakdown of the patterns is known to be proportional to the elastic modulus of pattern-constructing materials. In this research, we measured the change of hardness and elastic modulus of PMMA film surface according to the change of time spent to soft-bake the PMMA film. During the measurement, we controlled the tip pressure from $25{\mu}N$ to $8,500{\mu}N$ having intervals that are $134.52{\mu}N$. For these measurements, we used the Triboindenter from Hysitron to gauge the hardness and elastic modulus and the tip we used was Berkovich diamond Tip.