• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.231-234
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• 2004

Chemical mechanical polishing(CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with the slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various coefficient of friction was attained and analyzed with the kind of pad, abrasive and the abrasive concentration. The lubrication regime is also classified with ${\eta}v/p(\eta,\;v\;and\;p;$ the viscosity, relative velocity and pressure). Especially, the co-relation not only between the friction force and the removal per unit distance but also between the coefficient of friction and within-wafer-nonuniformity was estimated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.573-574
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• 2006

The planarization technology of Chemical-mechanical polishing(CMP), used for the manufacturing of multi-layer various material interconnects for Large-scale Integrated Circuits (LSI), is also readily adaptable as an enabling technology in MicroElectroMechanical System (MEMS) fabrication, particularly polysilicon surface micromachining. However, general LSI device CMP has partly distinction aspects, the pattern scale and material sorts in comparison with MEMS CMP. This study performed preliminary CMP tests to identify slurry characteristic used in general IC device. The experiment result is possible to verify slurry characteristic in MEMS structure material.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1727-1729
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP precess, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.1
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• pp.85-90
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• 2003

Removal rate and Within Wafer Non-Uniformity (WIWNU), the most critical issues in Chemical Mechanical Polish (CMP) process, are related to the pressure distribution, wafer shape, slurry flow, mechanical property of pad and etc. Among them, wafer warp generated by other various manufacturing process of wafer may induce the deviation of pressure distribution on the backside of wafer. In the convex shaped wafer the pressure onto the backside of wafer is higher than that of perfectly flat shaped wafer. Besides, such an added pressure is in proportion to the curvature of wafer. That is, the bigger the curvature of wafer becomes the higher the removal rate goes. And the WIWNU is known to be directly related to the pressure distribution on the wafer as well. In other words, the deviation of pressure distribution is in proportion to the WIWNU. In this paper, it is found that the wafer shape may be modified through heating the backside of it and thus properly changed pressure onto the backside of it may improve the WIWNU.

• Transactions of the Korean Society of Mechanical Engineers
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• v.5 no.4
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• pp.338-346
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• 1981

Honing, lapping, polishing and superfinishing are applied for a precision machining to finish the metal surface, but these precision machining are micro-cutting by hard and micro-abrasive grains. Frictional machining is the new method to finish mirrorlike surface without using those abrasive grains. The frictional machining produces high pressure and high temperature instantly by compressing a tool material against the metal surface in sliding motion. The metal surface is given plastic deformation and plastic flow by the above mentioned frictional motion, but the surface roughness of the metal surface is influenced by physical and chemical reaction in surrounding atmosphere. Therefore, the atmosphere around the metal optimum atmosphere in the frictional machining. The part 1 of the study was performed in liquid atmospheres. Diesel oil, lubricant, grease, lard oil, bean oil and cutting fluid were used as such atmospheres. Medium carbon steel SM 50 C was used as a workpiece and ceramic tip was applied as a frictional tool. The result of the experiment showed characteristic machining conditions to generate the best surface roughness in each atmospheres.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.315-318
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• 1997

In terms of productivity, the speed of machining process has been increasing in most of engineering part. But the tapping process does not reach at enough level compared with other machining processes because of its complicate cutting mechanism. In the high speed tapping process, the one of important elements is tool monitoring system to prevent tool breakage. This paper describes tool monitoring system by acoustic emission(AE) in the tapping process. We used 2 types of AE sensors in this test. The one is commercial sensor which is used in other machining monitoring system like polishing and the other is a self-fabricated sensor for this test. In this test we purpose to find out the frequency of AE signal in tapping process and verify the possibility of applying AE sensor in in-process tapping monitoring system. Also grasp of characteristic of tapping process by AE signal is handled.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.3 no.3
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• pp.52-57
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• 2004

Many kinds of gases, such as erosion gas, dilution gas, and toxic gas have been used in manufacturing process of LCD at semiconductor. In order to increase accumulation rate of manufacturing process, high degree of purity in these gases and minimized metalllic dust are required. All wetted stainless steel surface must be 316L electro-polished with $0254{\mu}m$ in average. Based on the AES analysis, Cr/Fe 11 and $Cr_2O_3$ thickness $25{\AA}$ are measured Molybdenum and silicon contaminants which is characteristic of stainless steel and oxygen were found on the surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.540-540
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• 2008

본 논문에서는 KOH 전해액을 이용하여 Cu 막의 부동태층의 형성을 I-V를 통해 평가하였으며, 이를 토대로 최적화된 전압과 시간을 알 수 있었다. 또한, SEM, EDS, XRD를 통해 표면 품질 및 성분 분석을 비교 분석하였다.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.10a
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• pp.302-307
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• 2002

In electropolishing, the ion from the surface of the metal is eliminated by means of an electrical potential and current. Electropolishing is being generally known as a replacement for mechanical finishing. In addition to making a surface smoother, it is a more visible means of brightening, deburring, cleaning, stress-relieving and improving the physical characteristics of most metals and alloys. Therefore, the aim of the present study is to investigate the characteristic of electropolishing STS304 and A12024 in terms of current density, polishing time and electrode gap, etc.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.78-80
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• 1994

Conventional methods for root finding of the algebraic equations are intrinsically synthetic division methods, i.e., which are the factorization in forms of $f(x)=(x-x_i)Q(x)$. So existing methods have some demerits such as deflation and root-polishing procedures. To overcome these defects a new powerful algorithm, namely circular arithmetic algorithm(CSM), was introduced and has been investigated about its fascinating properties. In this paper, we will propose a simple and effective method of getting the initial guesses for the roots of the equation. With this method the CSM can me all the root of equation with great efficiency.