• 한국추진공학회지
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• 제20권6호
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• pp.101-112
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• 2016

초음속 비행체의 항력 감소 기초 실험을 위한 플라즈마 분사장치의 특성에 대해 분석하였다. 플라즈마 종류는 고압에서 발생이 가능한 열 플라즈마가 적합하다. 열 플라즈마를 발생하기 위해 플라즈마 토치를 사용한다. 플라즈마 토치는 고압 고속 분사가 가능하기 때문에 플라즈마 분사 제트에 적합한 플라즈마 발생장치이다. 본 연구에서는 확보한 플라즈마 토치에 대해 분석 및 정리하였고 기초 연구를 수행하였다. 그 결과 플라즈마 제트 발생의 주요 변수로는 플라즈마 토치의 전극 간격과 공급 기체의 압력으로 고려되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.470-470
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• 2010

Negative ions are generated in fusion edge plasmas, material processing plasmas, ionospheric plasmas. Analytic formulas for the deduction of the absolute density of negative ions was given by using the current-voltage(IV) characteristics of two electric probes at two different pressures [1], and negative ion density has been measured by one electric probe using the current-voltage characteristics of three different pressures [2]. Ratios of ion and electron saturation currents and electron temperatures and sheath areas of different pressures are usually incorporated into two equations with two unknowns for the negative ion density. In the previous publications, the sheath factor(sheath area, sheath density, sheath velocity) and effective masses of background ions with different pressures are qualitatively incorporated for the deduction of negative density. In this presentation, the quantitative and detailed relation of negative ion density with sheath factor and effective masses are going to be given. The effect of these parameters on the change of IV characteristics will be addressed.

• 한국재료학회지
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• 제2권5호
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• pp.337-342
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• 1992

대향타겟트형 스파터기에서 BaO-l2Fe 복합타겟트를 사용하고 50% $O_2$+Ar 스파터가스를 사용한 반응성 프라즈마를 스펙트로스포프법으로 검진하였다. 프라즈마의 스펙트럼은 Ba, B$a^+$, Fe, FeO, F$e^+$, Ar, $Ar^+$, O, $O^+$의 피크로 이루어져 있었으며 타겟트로 부터 멀어짐에 따라 이온의 상대강도는 중성원소의 그것에 비하여 더 감소하였다.

• 천문학회보
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• 제44권1호
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• pp.48.4-48.4
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• 2019

Small-scale shear flows are ubiquitous in the universe, and astrophysical plasmas are often magnetized. We study the thermal condensation instability in magnetized plasmas with shear flows in relation to filamentary structure formation in cool structures in the universe, representatively solar prominences and supernova remnants. A linear stability analysis is extensively performed in the framework of magnetohydrodynamics (MHD) with radiative cooling, plasma heating and anisotropic thermal conduction to find the eigenfrequencies and eigenfunctions for the unstable modes. For a shear velocity less than the Alfven velocity of the background plasma, the eigenvalue with the maximum growth rate is found to correspond to a thermal condensation mode, for which the density and temperature variations are anti-phased (of opposite signs). Only when the shear velocity in the k-direction is near zero, the eigenfunctions for the condensation mode are of smooth sinusoidal forms. Otherwise each eigenfunction for density and temperature is singular and of a discrete form like delta functions. Our results indicate that any non-uniform velocity field with a magnitude larger than a millionth of the Alfven velocity can generate discrete eigenfunctions of the condensation mode. We therefore suggest that condensation at discrete layers or threads should be quite a natural and universal process whenever a thermal instability arises in magnetized plasmas.

• Journal of the Korean Physical Society
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• 제73권9호
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• pp.1310-1314
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• 2018

Non-Maxwellian distributions are found in the laboratory and space plasmas. For an accurate study of plasmas, the Kappa-averaged collision strengths of silicon VIII ion for $4^0S_{3/2}-2^0D_{3/2}$, $4^0S_{3/2}-2^0D_{5/2}$ and $2^0D_{3/2}-2^0D_{5/2}$ transitions are calculated for Kappa distributions with ${\kappa}=2$, 3 and 5 and for temperatures from $10^{4.5}K$ to $10^{6.5}K$. Results indicate that significant differences occur between the averaged collision strengths for the Maxwellian and the Kappa distributions. Fuythermore, and for each ${\kappa}$ value, the Kappa-averaged collision strengths vary in a complicated way with temperature for the $4^0S_{3/2}-2^0D_{3/2}$ and $4^0S_{3/2}-2^0D_{5/2}$ transitions while they decrease with increasing temperature for the $2^0D_{3/2}-2^0D_{5/2}$ transition. The calculation is significant if plasmas are to be studied for a non-Maxwellian distribution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.64-64
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• 2015

Control of plasma processing methodologies can only occur by obtaining a thorough understanding of the physical and chemical properties of plasmas. However, all plasma processes are currently used in the industry with an incomplete understanding of the coupled chemical and physical properties of the plasma involved. Thus, they are often 'non-predictive' and hence it is not possible to alter the manufacturing process without the risk of considerable product loss. Only a more comprehensive understanding of such processes will allow models of such plasmas to be constructed that in turn can be used to design the next generation of plasma reactors. Developing such models and gaining a detailed understanding of the physical and chemical mechanisms within plasma systems is intricately linked to our knowledge of the key interactions within the plasma and thus the status of the database for characterizing electron, ion and photon interactions with those atomic and molecular species within the plasma and knowledge of both the cross-sections and reaction rates for such collisions, both in the gaseous phase and on the surfaces of the plasma reactor. The compilation of databases required for understanding most plasmas remains inadequate. The spectroscopic database required for monitoring both technological and fusion plasmas and thence deriving fundamental quantities such as chemical composition, neutral, electron and ion temperatures is incomplete with several gaps in our knowledge of many molecular spectra, particularly for radicals and excited (vibrational and electronic) species. However, the compilation of fundamental atomic and molecular data required for such plasma databases is rarely a coherent, planned research program, instead it is a parasitic process. The plasma community is a rapacious user of atomic and molecular data but is increasingly faced with a deficit of data necessary to both interpret observations and build models that can be used to develop the next-generation plasma tools that will continue the scientific and technological progress of the late 20th and early 21st century. It is therefore necessary to both compile and curate the A&M data we do have and thence identify missing data needed by the plasma community (and other user communities). Such data may then be acquired using a mixture of benchmarking experiments and theoretical formalisms. However, equally important is the need for the scientific/technological community to recognize the need to support the value of such databases and the underlying fundamental A&M that populates them. This must be conveyed to funders who are currently attracted to more apparent high-profile projects.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제7회 학술발표회 및 한·일 CVD 심포지움 논문개요집
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• pp.152-153
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• 1994

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.229-229
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• 2008

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 1999년도 제2회 총회 및 춘계학술발표회
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• pp.52-52
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• 1999