• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.6-11
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• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.5
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• pp.150-156
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• 2009

The removal of tiny particles adhered to surfaces is one of the crucial prerequisite for a further increase in IC fabrication, large area displays and for the process in nanotechnology. Various cleaning techniques (wet chemical cleaning, scrubbing, pressurized jets and ultrasonic processes) currently used to clean critical surfaces are limited to removal of micrometer-sized particles. Therefore the removal of sub-micron sized particles from silicon wafers is of great interest. For this purpose various cleaning methods are currently under investigation. In this paper, we report on experiments on the cleaning effect of 100nm sized fluorescence particles on silicon wafer using the plasma shockwave occurred by femtosecond laser. The plasma shockwave is main effect of femtosecond laser cleaning to remove particles. The removal efficiency was dependent on the gap distance between laser focus and surface but in some case surface was damaged by excessive laser intensity. These experiments demonstrate the feasibility of femtosecond laser cleaning using 100nm size fluorescence particles on wafer.

• Applied Chemistry for Engineering
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• v.33 no.2
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• pp.229-233
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• 2022

In this study, a gas-liquid hybrid atmospheric pressure plasma reactor of the dielectric barrier discharge method was fabricated and characterized. The solubility of copper oxide in the organic acid solution was increased when argon having a larger atomic weight than helium was used during plasma discharge. There was no significant effect of mixing organic acid solutions under plasma discharge treatment on the variation of copper oxide's solubility. As the applied voltage for plasma discharge and the concentration of the organic acid solution increased, the dissolution and removal power of the copper oxide layer increased. Solubility of copper oxide was more affected by the concentration in organic acid solution rather than the variation of plasma applied voltage. The usefulness of hybrid plasma reactor for the surface cleaning process was confirmed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.12
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• pp.596-600
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• 2004

In this study, the surface properties of PET film were analyzed after plasma surface treatment. After plasma treatment of surface roughness and XPS were evaluated to analyze the chemical property, while the surface potential decay and surface resistance rate was measured to analyze the electric관 characteristic. When plasma discharge treatment was conducted for less than 10 minutes, the electrical insulating property was improved by evaporation of low molecular weight materials and cleaning of surface. However, when the treatment was conducted for more than 10 minutes, the insulating property was decreased due to excessive discharge energy. Analyses of chemical characteristics showed that 10-minute treatment resulted in increase of C-O and O=C-O bonds. However, when treated for more than 10 minutes. they were relatively decreased.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.179-184
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• 2015

Quadrupole Mass Spectrometers (QMS) is a very useful tool in vacuum process diagnosis. Tungsten filament based ion sources are vulnerable to contamination from process gas monitoring. Common symptoms of quadrupole mass spectrometer malfunction is appearance of unwanted contaminant mass peaks or no detection of any ion peaks. We disassembled used quadrupole mass spectrometer and found out black insulating deposits on inside of ion source parts. Five steps of cleaning procedure were applied and almost full restoration of functions were confirmed in two types of closed ion source quadrupole mass spectrometer. By using a numerical modeling (CFD-ACE+) technique, the electric potential profile of ion source with/without insulating deposit was calculated and showed the possibility of quadrupole mass spectrometer malfunction by the deterioration of designed potential profile inside the ion source.

• Journal of the Korean Society of Safety
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• v.16 no.3
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• pp.61-67
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• 2001

In this study the electrical and mechanical characteristics of PET films ore analyzed after plasma surface treatment. After plasma treatment, the surface potential decay, surface potential and dielectric property were evaluated to analyze the electrical insulating property, and the tensile strength was measured as the mechanical characteristic. When plasma treatment was conducted for less than 10 minutes, it was found that the electrical insulating property was improved through evaporation of low molecular weight materials md cleaning of surface. However, for more than 10 minutes, the insulating property of plasma treated PET films was decreased due to excessive discharge energy. The tensile strength was hardly changed by Plasma treatment.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3279-3281
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• 1999

This paper describes a method of direct wafer bonding using surfaces activated by a radio-frequency hydrogen plasma. The hydrogen plasma cleaning of silicon in the RIE mode was investigated as a pretreatment for silicon direct bonding. The cleaned silicon surface was successfully terminated by hydrogen, The hydrogen-terminated surfaces were rendered hydrophilic, which could be wetted by Dl water rinse. Two wafers of silicon and silicon dioxide were contacted to each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in an $N_2$ atmosphere for 2 h. From the AFM results, it was revealed that the surface became rougher with the increased plasma exposure time and power. The effect of the plasma treatment on the surface chemistry was investigated by the AES analysis. It was shown that the carbon contamination at the surface could be reduced below 5 at %. The interfacial energy measured by the crack propagation method was 122 $mJ/m^2$ and 384 $mJ/m^2$ for RCA cleaning and hydrogen plasm, respectively.

• Journal of the Korean institute of surface engineering
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• v.26 no.2
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• pp.71-81
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• 1993

Thed effects of Ar or Oxygen RF plasma treatment on the adhesion behavior of Cr films to polyimide sub-strates have been investigated by using SEM, XRD, AES, and $90^{\circ}$peel test. By applying RF plasma treatment of the polyimide surface prior to metal deposition, the peel adhesion strength of Cu/Cr films sputtered onto the fully cured BPDA-PDA polyimide was highly increased from about 3g/mm to 90 ~ 100g/mm. Improved peel adhesion strength of Cr/polyimide interfaces due to RF plasma treatment was attributed to the contributions from surface cleaning, Cr-polyimide bonding at the interface, and force required for plastic deformation of the film. While the surface topology change of the polyimide caused by RF plasma treatment makes a little contri-bution to the improved adhesion.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.16-16
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• 2006

• Journal of the Korean Society for Heat Treatment
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• v.16 no.3
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• pp.165-171
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• 2003