• Title/Summary/Keyword: plasma source ion implantation

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CHARACTERIXATION OF PLASMA ION IMPLANTED SURFACES USING TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMATRY

  • Lee, Yeon-Hee;Han, Seung-Hee;Lee, Jung-Hye;Yoon, Jung-Hyeon
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.880-883
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    • 1996

  • Plasma Source Ion Implantation (PSII) technique was used for the hydrophilization or hydrophobization of polymer surfaces. Polymers were modified with different plasma gases such as oxygen, nitrogen, argon, and tetrafluoromethane, and for varying lengths of treatment time. Plasma ion treatment of oxygen, nitrogen, argon and their mixtures increased significantly the hydrophilic properties of polymer surfaces. More hydrophobic surfaces of polymers were formed after the treatment with tetrafluoromethane. A study of plasma source ion implanted polymers was performed using contact angle measurements and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). The TOF-SIMS spectra and depth profile were used to obtain the information about the treated surfaces of polymers. The permanence of this technique could be evaluated with respect to ageing time. The surfaces treated with PSII gave better stability than other surface modification methods.

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Effect of Nitrogen Ion Implantation on Corrosion Resistance of Biocompatible Ti Implant (질소이온의 주입이 생체안전성 티타늄임플란트의 내식성에 미치는 영향)

  • 최종운;손선희
    • Journal of the Korean Society of Safety
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    • v.14 no.3
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    • pp.134-139
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    • 1999

  • In this study, PSII(plasma source ion implantation) was used to improve the biocompatibility of bone-anchored Ti implant. According to potentiodynamic anodic polarization test in deaerated Hank's solution, open circuit potential of ion implanted specimens were increased compare to that of unimplanted specimen ; besides, passive current density and critical anodic current density of ion implanted specimens were lower than unimplanted specimen.

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The design and fabricationt for ion fraction measurement of plasma generator (플라즈마발생기의 이온분율 측정 장치 설계 및 제작)

  • Lee, Chan-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.368-368
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    • 2008

  • Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

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Surface Properties of Plasma Nitrogen Ion Implanted Stainless Steel (플라즈마 질소 이온주입한 오스테나이트 스테인레스 강의 표면특성)

  • Kim, G.H.;Nikiforov, S.A.;Lee, H.S.;Rim, G.H.
    • Proceedings of the KIEE Conference
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    • 1999.07e
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    • pp.2253-2255
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    • 1999

  • Plasma source ion implantation (PSII) is a non-line-of-sight technique for surface modification of materials which is effective for non-planar targets. Properties such as hardness, corrosion resistance, wear resistance and friction can be improved without affecting the bulk properties of the material. Type 304 austenitic stainless steel was treated by nitrogen plasma ion implantation at a target bias of -50kV. Surface properties, including microhardness and ion depth profile, were studied.

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