• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.196-196
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.328-329
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• 2006

반도체 소자의 소형화, 고질적화는 junction 깊이 감소와 도핑농도의 증가를 요구한다. 현재 상용화되는 도핑법은 이온빔 주입(Ion Beam Ion Implantation, IBII)인데, 이 방법은 낮은 가속에너지를 가하는 경우 이온빔의 정류가 금속이 감소해 주입 속도가 낮아져 대랑 생산이 어렵고 장비가 고가라는 단점이 있다. 하지만 플라즈마를 이용한 이온주입법 (Plasma Source Ion Implantation, PSII)은 공정 속도가 빠르고 제조비용이 매우 저렴해 새로운 이온주입법으로 주목받고 있다. PSII법에서 플라즈마 특성은 그 결과에 큰 영향을 미치므로 플라즈마 특성의 적절한 제어가 필수적으로 요구된다. 본 연구에서는 공정압력과 RF power를 변화시키며 플라즈마 밀도 측정했다. 그 결과 공정압력이 증가함에 따라서 플라즈마 밀도는 감소되었고 RF power 증가함에 따라서 플라즈마 밀도는 증가되었다.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.2
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• pp.162-168
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• 2011

In this research, nitrogen plasma source ion implantation(PSII) of non-coated tungsten carbide endmill tools was conducted with low heat treatment for increasing wear resistance. After the low heat treatment of PSIIed tools to give a homogeneity of wear resistance, the surface modification of tools was analyzed by hardness test, surface roughness and cutting forces. As for the resultant cutting forces, low heat treatment in temperature of $400^{\circ}C$ and $500^{\circ}C$ is stable because of low cutting resistance. The 20-minutes heat treated tool at spindle speed 25000rpm has superiority of surface roughness, Ra of $0.420{\mu}m$ and was found to have good wear resistance. The higher hardness value was obtained by increasing temperature from $300^{\circ}C$ to $600^{\circ}C$ for PSIIed tools with low heat treatment. As the PSIIed tools under 10minutes at temperature of $600^{\circ}C$ have the highest hardness as Hv of 2349.8, It was analyzed that temperature processing give much influences on hardness.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.4
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• pp.47-50
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• 2006

SCM415 alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of $1{\times}10^{17}\;to\;6{\times}10^{17}\;N^+cm^{-2}$ Auger electron spectrometry (AES) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a block-on-ring wear tester. Scanning electron microscopy (SEM) was used to observe the micro-morphology of the worn surface. The results revealed that after being implanted with nitrogen ions, the frictional coefficient of the surface layer decreased, and the wear resistance increased with the nitrogen dose. The tribological mechanism was mainly adhesive, and the adhesive wear tended to become weaker oxidative wear with the increase in the nitrogen dose. The effects were mainly attributed to the formation of a hard nitride precipitate and a supersaturated solid solution of nitrogen in the surface layer.

• Journal of the Korean Society of Safety
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• v.14 no.4
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• pp.126-134
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• 1999

In this study, plasma source ion implantation was used to improve the wear properties of biocompatible titanium implant. In order to observe the effect of ion energy and dose on wear property of titanium implant, pin-on-disk type wear tests in Hank's solution were carried out. The friction coefficient of ion implanted specimens were increased from 0.47 to 0.65 under high energy and ion dose conditions. As increasing ion energy and ion dose, the amount of wear was reduced.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.31-34
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• 2002

For the mold die sticking mechanism, the major explanation is that the silica as a filler in EMC (epoxy molding compound) wears die surface to be roughened, which results in increase of adhesion strength. As the sticking behavior, however, showed strong dependency on the EMC models based on the experimental results from different semiconductor manufacturers, chemisorption or acid-base interaction is apt to be also functioning as major mechanisms. In this investigation, the plasma source ion implantation (PSII) using $O_2, N_2$, and $CF_4$ modifies sample surface to form a new dense layer and improve surface hardness, and change metal surface condition from hydrophilic to hydrophobic or vice versa. Through surface energy quantification by measuring contact angle and surface ion coupling state analysis by Auger, major governing mechanism for sticking issue was figured out to be a complex of mechanical and chemical factors.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.33-40
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• 2010

In this research, the effects for surface Improvement of plasma ion implanted carbide endmill tools were observed by measuring cutting forces and tools wear affecting surface roughness in high speed cutting. From the 2nd ion mass analysis, the oxidation layer was found to be built up by sputtering. The residual gas contamination of oxygen was found to be contained impurities in nitrogen gas. The plasma implanted ion was found to be spreaded, especially the nitrogen was implanted up to 150nm depth as impressed voltage and ion implanting time. It is analyzed as bring surface improvement by spreading deeply forming oxidation on surface. The factors in Analysis of Variance(ANOVA) about mutuality cause reference of cutting force. The cutting force Fx is affected by the interaction of spindle rpm and federate, the cutting force Fy is influenced by spindle rpm and time injected ion, and cutting force Fz is affected by the interaction of impressed voltage and feedrate. Also, it was found that the cutting forces of implanted tools become lower and the surface roughness is improved by the effect of nitrogen according to the implantation.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.345-349
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• 1996

The wetting property of polymer surfaces is very important for practical applications. Plasma source ion implantation technique was used to improve the wetting properties of polymer surfaces. Poly(ethylene terephtalate) and other polymer sheets were mounted on the target stage and an RF plasma was generated by means of an antenna located inside the vacuum chamber. High voltage pulses of up to -10kV, 10 $\mu$sec, and up to 1 kHz were applied to the stage. The samples were implanted for 5 minutes with using Ar, $N_2,O_2,CH_4,CF_4$ and their mixture as source gases. A contact angle meter was used to measure the water contact angles of the implanted samples and of the samples stored in ambient conditions after implantation. The modified surfaces were analysed with Time-Of-Flight Mass Spectrometer (TOF-SIMS) and Auger Electron Spectroscopy (AES). The oxygen-implanted samples showed extremely low water contact angles of $3^{\circ}C$ compared to $79^{\circ}C$ of unimplanted ones. Furthermore, the modified surfaces were relatively stable with respect to aging in ambient conditions, which is one of the major concerns of the other surface treatment techniques. From TOF-SIMS analysis it was found that oxygen-containing functional groups had been formed on the implanted surfaces. On the other hand, the $CF_4$-implanted samples turned out to be more hydro-phobic than unimplanted ones, giving water contact angles exceeding $100^{\circ}C$ . The experiment showed that plasma source ion implantation is a very promising technique for polymer surface modification especially for large area treatment.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1797-1799
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• 1998

Plasma source ion implantation(PSII) is a non-line-of-sight technique for surface modification of materials which is effective for non-planar targets. A apparatus of 30kV PSII is established and plasma characteristics are diagnosed by using a Langmuir probe. A spherical target is immersed in argon plasma and biased negatively by a series of high voltage pulses. Sheath evolution is measured by using a Langmuir probe and compared with the result of computer simulations.