• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.292-300
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• 2006

In order to improve energy efficiency in the dilute trichloroethylene removal using the nonthermal plasma process, the barrier discharge treatment combined with manganese dioxide was experimentally studied. Reaction kinetics in this process was studied on the basis of final byproducts distribution. Decomposition efficiency was improved to about $99\;\%$ at the specific energy of 40 J/L with passing through manganese dioxide. C=C ${\pi}$ bond cleavage of TCE substances gave DCAC, which has the single bond of C-C through oxidation reaction during the barrier discharge plasma treatment. Those DCAC were broken easily in the subsequent catalytic reaction due to the weak bonding energy about $3{\sim}4\;eV$ compared with the double bonding energy in TCE molecules. Oxidation byproducts of DCAC and TCAA from TCE decomposition are generated from the barrier discharge plasma treatment and catalytic surface chemical reaction, respectively. Complete oxidation of TCE into COx is required to about 400 J/L, but $CO_2$ selectivity remains about $60\;\%$.

• 한국재료학회지
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• 제3권6호
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• pp.565-574
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• 1993

Ar/Ar-$H_{2}$ 플라즈마법으로 고순도 Nb금속을 환원 정련하였다. 또한, Ar-(20%)$H_{2}$플라즈마에서의 용융Nb금속과 수소간의 반응을 해석하였다. Ar플라즈마 환원에서는 $C/Nb_{2}O_{5}$=5.00의 비에서 99.5wt%의 금속 Nb을 얻었으며, 니오븀 산화물의 열분해에 의한 O/Sub 2/의 손실은 발생하지 않았다. Ar-(20%)$H_{2}$ 플라즈마에서는 $C/Nb_{2}O_{5}$=4.80의 비에서 99.8wt%의 금속 Nb을 제조하였다. 주된 탈산반응은 H, $H_{2}$와의 반응이었으며,$NbO_{x}$의 증발에 의한 탈산은 발생하지 않았으나, "splash"효과에 의해 Nb의 질량손실이 발생함을 관찰하였다. 탈산반응은 1차 반응속도론에 따랐으며, 탈산의 반응속도 상수(k')는 $7.8 \times 10_{-7}$(m/sec)였다. Ar-(20%)$H_{2}$ 플라즈마법에서 Nb금속 내의 수소 용해도는 60ppm으로 분자상태 수소의 용해도인 40ppm 보다 높았으며, 포화되는 시간은 60초 이내였다. 이를 다시 Ar 플라즈마로 처리함으로써 수소 함량을 10ppm 이하로 감소시킬 수 있었다.소시킬 수 있었다.

• 한국대기환경학회지
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• 제18권1호
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• pp.51-58
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• 2002

Destruction process of toluene using a wire-cylindrical BBD (Dielectric Barrier Discharge) reactor packed with catalysts was investigated to characterize the synergetic effects of non-thermal plasma and catalyst process. The catalysts used in the present study were ${\gamma}$-Al$_2$BO$_3$ and Pt/${\gamma}$-Al$_2$O$_3$. Under the numerous test conditions, specific energy density (SED (J/L)) and the conversion of toluene, defined as (1 -[C$_{f}$]/[C$_{i}$]), were measured. The test results showed that toluene decomposition efficiency followed the pseudo-first order in the case of plasma only process. The pseudo-first order process, however, was modified to pseudo-zeroth order reaction in the case of catalyst-assisted plasma process. This modification of the reaction order was verified based on a simple kinetic model proposed in the present study. Owing to the modification of reaction order, which resulted from the catalytic process, the specific energy to achieve the high removal efficiencies, i.e. 80~90%, was reduced significantly.y.y.

• 전기학회논문지
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• 제60권3호
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• pp.669-673
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• 2011

This study explores the numerical analysis method of fluid dynamics in the reaction section to improve the gas processing efficiency in the hazardous gas removal by atmospheric thermal plasma. This study also intends to contribute in technology advance to improve the processing efficiency and make the process more stable. Numerical analysis of temperature distribution in the reaction section dependent on the change in flow velocity of Ar and plasma temperature change, which are major control variables in the cracking process of HFC-23 using arc plasma, was done. The characteristic of incoming oxygen by temperature suggested that when temperature increased to 1600K, 1700K, 1800K respectively, the range of cracking temperature 1500K increased to 75.0%, 83.3%, 90.2% respectively. The temperature change of Ar by velocity change was widest in the area higher than 1500K when the velocity was 2.5m/s; however, since there was no big difference when the velocity was 2m/s, it is believed that 2 m/s would be most proper.

• 접착 및 계면
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• 제10권3호
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• pp.148-153
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• 2009

용제 및 수용성 접착제를 도포한 몇가지 고분자 소재에 평판형 플라즈마 반응기로 플라즈마 전처리 방식을 이용하여 소재표면의 접착력을 향상 시켰다. 분위기 기류를 질소로 하고 유량을 30~100 mL/min, 반응시간은 0~30 s로 하여 밀도를 변화시킨 PU 소재를 주 물질로 하여 EVA foam, Leather (Action), Rubber 소재에 대하여 각 조건별로 플라즈마 처리시켜 처리 전후의 각 소재별 접촉각과 접착박리강도 측정을 통한 각소재의 접착력 변화와, SEM분석을 이용한 처리 전후의 표면 변화를 측정하여 플라즈마 처리의 영향과 효과를 산출하였다. 대기압 평판형 플라즈마 반응기를 이용하여 최적 조건인 기체유량 100 ml/min, 전처리시간 10 s에서 PU foam, EVA form, Leather (Action) 및 Rubber 소재의 접착력 향상을 확인하였다.

• 접착 및 계면
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• 제8권4호
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• pp.23-31
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• 2007

고분자 소재에 평판형 플라즈마 전처리 방식을 적용시켜 표면의 접촉각 및 접착력을 향상시켰다. 분위기 기류를 질소로 하고 유량을 30~100 mL/min, 반응시간은 0~30초로 하여 PU 소재를 주 물질로 하여 EVA foam, Leather (Action), Rubber, Unwoven 소재에 대하여 각 조건별로 플라즈마 처리시켜 처리 전후의 각 소재별 접촉각과 접착박리강도 측정을 통한 소재의 물성변화와, SEM분석을 이용한 처리 전후의 표면 변화를 측정하여 플라즈마 처리의 영향과 효과를 산출하였다. 대기압 평판형 플라즈마 반응기를 이용하여 최적 조건인 기체유량 100 mL/min, 전처리시간 10초에서 EVA foam, Leather (Action) 및 Rubber 소재의 접촉각 감소와 접착력 향상을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.74-74
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• 2010

The aqua-plasma is the non-thermal plasma in electrical conductive electrolyte by generates the vapor film layer on the immersed metal electrode surface. This plasma can generate the hydroxyl radical by dissociate the water molecule with the plasma electron. To develop the plasma discharge device for high efficiency in the hydroxyl radical generation, proper model for estimation of plasma power is necessary. In this work, the 1-D spherical model was developed, considering temperature dependence material constants. The relation between the plasma power and hydroxyl generation was also studied by the comparison between the optical emission intensity from the hydroxyl radical using monochromator and estimated plasma power. First, the thickness of vapor layer thickness was estimated using the Navier-Stokes fluid equation in order to calculate the discharge E-field inside vapor layer. Using the E-field magnitude and power balance on the plasma generation, it was possible to estimate the plasma power. The plasma power was assumed to uniformly fill the vapor layer and the temperature of vapor layer was fixed in the boiling temperature of electrolyte, 375K. In the experiment, the aqua-plasma was discharged in the saline by applied the voltage on the bipolar electrode. The range of applied voltage was 234 to 280V-rms in the frequency of 380 kHz. Two type electrodes were produced with two ${\Phi}0.2$ tungsten. The plasma power was estimated from the V-I signal from the two high voltage probes and current probe. The estimated plasma power agreed with the profile of emission intensity when the plasma discharged between the metal electrode and vapor layer surface. However, when the plasma discharged between the metal electrodes, the increasing rate of emission intensity was lower than the increase of plasma power. It implies that the surface reaction is more sufficient rather than the volume reaction in the radical generation, due to the high density of water molecule in the liquid.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2005년도 Proceedings of The 6th korea-china joint workshop on nuclear waste management
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• pp.300-315
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• 2005

Recently plasma surface-cleaning or surface-etching techniques have been focused in the respect of decontamination of spent or used nuclear parts and equipment. In this study decontamination rate of metallic cobalt surface was experimentally investigated via its surface etching rate with a $CF_4-O_2$ mixed gas plasma and metallic surface wastes of cobalt oxides were simulated and decontaminated with $NF_3$ - Ar mixed gas plasma. Experimental results revealed that a mixed etchant gas with about $80{\%}\;CF_4-20{\%}\;O_2$ gives the highest reaction rate of cobalt disk and the rate reaches with a negative 300 DC bias voltage up to $0.43\;{\mu}m$/min at $380^{\circ}C$ and $20{\%}\;NF_3-80\%$ Ar mixed gas gives $0.2\;{\mu}m$/min of reaction rate of cobalt oxide film.

• 한국표면공학회지
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• 제32권3호
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• 한국산업융합학회 논문집
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• 제6권4호
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• pp.269-275
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• 2003

A non-thermal plasma process combined with $Cr_2O_3/TiO_2$ catalyst was applied to the decomposition of trichloroethylene (TCE). A dielectric barrier discharge reactor operated with AC high voltage was used as the non-thermal plasma reactor. The effects of reaction temperature and input power on the decomposition of TCE and the formation of byproducts including HCl, $Cl_2$, CO, NO, $NO_2$ and $O_3$ were examined. At an identical input power, the increase in the reaction temperature from 373 K to 473 K decreased the decomposition of TCE in the plasma reactor. The presence of the catalyst downstream the plasma reactor not only enhanced the decomposition of TCE but also affected the distribution of byproducts, significantly. However, synergistic effect as a result of the combination of non-thermal plasma with catalyst was not observed, i.e., the TCE decomposition efficiency in this plasma-catalyst combination system was almost similar to the sum of those obtained with each process.