• Title/Summary/Keyword: plasma monitoring

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A Method for Real Time Monitoring of Oxide Thickness in Plasma Electrolytic Oxidation of Titanium

  • Yoo, Kwon-Jong;Lee, Yong-K.;Lee, Kang-Soo
    • Corrosion Science and Technology
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    • v.9 no.1
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    • pp.8-11
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    • 2010
  • During PEO (plasma-electrolytic-oxidation) treatment of titanium, the relationship between the thickness of oxide film and the measured electrical information was investigated. A simple real time monitoring method based on the electrical information being gathered during PEO treatment is proposed. The proposed method utilizes the current flowing from a high frequency voltage source to calculate the resistance of an oxide film, which is converted into the thickness of an oxide film. This monitoring method can be implemented in PEO system in which an oxide film is grown by constant or pulsed voltage/current sources.

Development of Monitoring System Using Residual Gas Analyzer (RGA) and Artificial Intelligence Modeling (잔류가스 분석기(RGA)와 인공지능 모델링을 이용한 모니터링 시스템 개발)

  • Ji Soo Lee;Song Hun Kim;Gyeong Su Kim;Hyo Jong Song;Sang-Hoon Park;Deuk-Hoon Goh;Bong-Jae Lee
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.2
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    • pp.129-134
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    • 2024
  • This study aims to talk about the necessity of solving the PFC gas emission problem raised by the recent development of the semiconductor industry and the remote plasma source method monitoring system used in the semiconductor industry. The 'monitoring system' means that the researchers applied machine learning to the existing monitoring technology and modeled it. In the process of this study, Residual Gas Analyzer monitoring technology and linear regression model were used. Through this model, the researchers identified emissions of at least 12700mg CO2 to 75800mg CO2 with values ranging from ion current 0.6A to 1.7A, and expect that the 'monitoring system' will contribute to the effective calculation of greenhouse gas emissions in the semiconductor industry in the future.

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Fundamental study of electrolyte cathode atomic discharge for development of on-line monitoring system (On-line monitoring system 개발에 관한 음극 액상 글로우 방전의 기초 연구)

  • Kim, Kyung-Mi;Woo, Young-A;Cho, Won-Bo;Kim, Hyo-Jin
    • Analytical Science and Technology
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    • v.15 no.6
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    • pp.496-501
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    • 2002
  • The electrolyte cathode glow discharge (ELCAD) is a new optical system for direct determination of trace heavy metals in flowing water. ELCAD has been successfully developed for on-line monitoring of heavy metals in flowing water. The application of an atmospheric glow discharge between an electrolyte solution cathode and a platinum rod anode led to the development of stable discharge. The fundamental aspects of new plasma source have been investigated. The fundamental study of ELCAD system has been measured plasma temperature using Einstein-Boltzmann equation after searching Fe atomic emission lines. The spectrum of each elements such as Cu, Pb, Fe, Ni and Cr show only major elemental line and no ionic line possibly due to low temperature plasma source. The detection limits of each elements are also investigated. These informations show that this type of plasma may apply for monitoring of heavy metals in waste water which consists of complex matrix.

Plasma Uniformity Analysis of Inductively Coupled Plasma Assisted Magnetron Sputtering by a 2D Voltage Probe Array

  • Joo, Junghoon
    • Applied Science and Convergence Technology
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    • v.23 no.4
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    • pp.161-168
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    • 2014
  • A real-time monitoring of immersed antenna type inductively coupled plasma (ICP) was done with a homemade 2 dimensional voltage probe array to check the uniformity of the plasma. Measured voltage values with a high impedance voltmeter are close to the floating potential of the plasma. As the substrate carrier was moving into a magnetron sputtering plasma diffusive from a $125mm{\times}625mm$ size cathode, measured results showed reliably separation of plasma into the upper and lower empty space over the carrier. Infra red thermal imaging camera was used to observe the cross corner effect in situ without eroding a target to the end of the usage. 3 dimensional particle trace model was used to analyze the magnetron discharge's behavior.

A Simple and Efficient Method to Determine Rivaroxaban in Rat Plasma Using Liquid-Liquid Extraction and LC-MRM

  • Lee, Hyo Chun;Kim, Dong Yoon;Choi, Min-Jong;Jin, Sung Giu;Choi, Yong Seok
    • Mass Spectrometry Letters
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    • v.10 no.2
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    • pp.66-70
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    • 2019
  • Rivaroxaban (RRN) is the first available active direct factor Xa inhibitor (anticoagulant) with oral administration. Due to its success in market, there have been efforts to develop various RRN formulations, and the development of good analytical methods for its in vivo evaluation is an essential prerequisite. Thus, here, a simple and efficient method to determine RRN in rat plasma using liquid-liquid extraction (LLE) and liquid chromatography and multiple reaction monitoring (LC-MRM) was presented. The use of ethyl acetate as the LLE solvent results appropriate extraction and purification of RRN and it also helps the significant reduction of rat plasma volume required for RRN quantitation. The developed method showed good analytical performance including specificity, linearity ($r^2{\geq}0.999$ within 0.5 - 500 ng/mL), sensitivity (the lower limit of quantitation at 0.5 ng/mL), accuracy (89.3 - 107.0%), precision (${\geq}12.7%$), and recovery (89.2 - 105.7%). Additionally, RRN in sample extracts showed good stability. Finally, the applicability of the validated method to the PK evaluation of RRN was confirmed after its oral administration to normal rats. The present method is the first analytical method employing LLE for the simple and efficient extraction and purification of RRN in rat plasma. Therefore, the present method can contribute to the development of new RRN formulations as well as to the monitoring of RRN in special clinical situations through its efficient determination in various samples with or without minor modification.

Science Objectives and Design of Ionospheric Monitoring Instrument Ionospheric Anomaly Monitoring by Magnetometer And Plasma-probe (IAMMAP) for the CAS500-3 Satellite

  • Ryu, Kwangsun;Lee, Seunguk;Woo, Chang Ho;Lee, Junchan;Jang, Eunjin;Hwang, Jaemin;Kim, Jin-Kyu;Cha, Wonho;Kim, Dong-guk;Koo, BonJu;Park, SeongOg;Choi, Dooyoung;Choi, Cheong Rim
    • Journal of Astronomy and Space Sciences
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    • v.39 no.3
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    • pp.117-126
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    • 2022
  • The Ionospheric Anomaly Monitoring by Magnetometer And Plasma-probe (IAMMAP) is one of the scientific instruments for the Compact Advanced Satellite 500-3 (CAS 500-3) which is planned to be launched by Korean Space Launch Vehicle in 2024. The main scientific objective of IAMMAP is to understand the complicated correlation between the equatorial electro-jet (EEJ) and the equatorial ionization anomaly (EIA) which play important roles in the dynamics of the ionospheric plasma in the dayside equator region. IAMMAP consists of an impedance probe (IP) for precise plasma measurement and magnetometers for EEJ current estimation. The designated sun-synchronous orbit along the quasi-meridional plane makes the instrument suitable for studying the EIA and EEJ. The newly-devised IP is expected to obtain the electron density of the ionosphere with unprecedented precision by measuring the upper-hybrid frequency (fUHR) of the ionospheric plasma, which is not affected by the satellite geometry, the spacecraft potential, or contamination unlike conventional Langmuir probes. A set of temperature-tolerant precision fluxgate magnetometers, called Adaptive In-phase MAGnetometer, is employed also for studying the complicated current system in the ionosphere and magnetosphere, which is particularly related with the EEJ caused by the potential difference along the zonal direction.

Plasma Etching Process based on Real-time Monitoring of Radical Density and Substrate Temperature

  • Takeda, K.;Fukunaga, Y.;Tsutsumi, T.;Ishikawa, K.;Kondo, H.;Sekine, M.;Hori, M.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.93-93
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    • 2016
  • Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

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RF Plasma Processes Monitoring for Fluorocarbon Polluted Plasma Chamber Cleaning by Optical Emission Spectroscopy and Multivariate Analysis (Optical Emission Spectra 신호와 다변량분석기법을 통한 Fluorocarbon에 의해 오염된 반응기의 RF 플라즈마 세정공정 진단)

  • Jang, Hae-Gyu;Lee, Hak-Seung;Chae, Hui-Yeop
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.11a
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    • pp.242-243
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    • 2015
  • Fault detection using optical emission spectra with modified K-means cluster analysis and principal component anal ysis are demonstrated for inductive coupl ed pl asma cl eaning processes. The optical emission spectra from optical emission spectroscopy (OES) are used for measurement. Furthermore, Principal component analysis and K-means cluster analysis algorithm is modified and applied to real-time detection and sensitivity enhancement for fluorocarbon cleaning processes. The proposed techniques show clear improvement of sensitivity and significant noise reduction when they are compared with single wavelength signals measured by OES. These techniques are expected to be applied to various plasma monitoring applications including fault detections as well as chamber cleaning endpoint detection.

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Minimization of Welding Defect in $CO_2$ Laser Welded Tube

  • Suh Jeong;Kang Hee-Shin;Lee Jae-Hoon;Park Kyoung-Taik;Lee Moon-Yong;Jung Byung-Hun
    • International Journal of Precision Engineering and Manufacturing
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    • v.6 no.3
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    • pp.19-23
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    • 2005
  • To minimize the weld defect in manufacturing of the welded tube by using $CO_2$ laser, the monitoring of the welding quality and the seam tracking along the butt-joint lengthwise to the tube axis are studied. The longitudinal butt-joint is shaped from $60kgf/mm^2$ grade steel sheet by 2 roll bending method, and welded by the $CO_2$ laser welding system equipped with the seam tracker and plasma sensor. The laser welded tube has the thickness of 1.5mm, diameter of 105.4mm and length of 2000mm. The precise positioning of the laser beam on the butt-joint to be assembled is obtained within $200{\mu}m$ by the laser vision sensor. The artificial defects in the butt-joint are well observed by the signal of plasma intensity measured from the plasma sensor of UV wavelength range within 400nm. The developed $CO_2$ laser tube welding system has the function of the precision seam tracking and the real-time monitoring of the welding quality. In conclusion, the laser welded tube can be used for manufacturing of automobile chassis and components after hydro-forming.

Monitoring Ion Energy Distribution in Capacitively Coupled Plasmas Using Non-invasive Radio-Frequency Voltage Measurements

  • Choi, Myung-Sun;Lee, Seok-Hwan;Jang, Yunchang;Ryu, Sangwon;Kim, Gon-Ho
    • Applied Science and Convergence Technology
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    • v.23 no.6
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    • pp.357-365
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    • 2014
  • A non-invasive method for ion energy distribution measurement at a RF biased surface is proposed for monitoring the property of ion bombardments in capacitively coupled plasma sources. To obtain the ion energy distribution, the measured electrode voltage is analyzed based on the circuit model which is developed with the linearized sheath capacitance on the assumption that the RF driven sheath behaves like a simple diode for a bias power whose frequency is much lower than the ion plasma frequency. The method is verified by comparing the ion energy distribution function obtained from the proposed model with the experimental result taken from the ion energy analyzer in a dual cathode capacitively coupled plasma source driven by a 100 MHz source power and a 400 kHz bias power.