• 전기학회논문지P
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• 제51권1호
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• pp.33-38
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• 2002

In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Carbon letters
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• 제6권4호
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• pp.243-247
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• 2005

Plasma polymerization of allylamine subsequently after plasma pre-treatment was conducted on the activated carbon fibers (ACFs) for the immobilization of amine groups in the surface of ACFs. The change of structural properties of ACFs with respect to different polymerization conditions was investigated through BET method. The change of surface morphologies of ACFs with respect to different plasma polymerization power was also studied through AFM. It was found that the structural properties such as specific surface area and micropore volume could be optimized under certain plasma deposition conditions. It was reckoned that treatment and deposition showed adverse effect on plasma polymerization, in which the former developed the micro-structures of the ACFs and the latter tended to block the micro pores. The Fourier transform infrared spectroscopy (FTIR) revealed that the poly(allylamine) was successfully immobilized on the surface of ACFs and the amount of the deposited polymer layer was related to the plasma polymerization power. SEM results showed that the plasma deposited polymer layer were small and homogenously distributed. The size and the distribution of particles deposited were closely related to the plasma polymerization power, too.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.384.2-384.2
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• 2014

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.

• 한국재료학회지
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• 제11권5호
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• pp.361-366
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• 2001

TiN barrier 막 위에 metal organic chemical vapor deposition (MOCVD)법으로 Cu막을 증착함에 있어 TiN막 표면을 먼저 세정처리하지 않고 바로 Cu막을 증착하려하면 Cu의 핵생성이 어렵고, 그 결과 연속된 Cu막이 형성되지 못한다. 본 연구에서는 SEM, AES, AFM 등의 분석방법을 사용하여 TiN 막 표면에 대한 플라즈마 전처리 세정이 Cu막의 핵생성에 미치는 효과에 관하여 조사하였다. Gu의 전처리 세정방법으로는 direct플라즈마 방식이 원거리 플라즈마 방식보다 훨씬 더 효과적이다. 또한 수소플라즈마 전처리 시 rf-power와 플라즈마 조사시간이 증가함에 따라 세정효과는 더 증대된다. 플라즈마 전처리가 Cu의 핵생성을 고양시키는 원리는 다음과 같다. 플라즈마 내의 수소이온이 TiN과 반응하여 $NH_3$가 됨으로서 질소 성분이 제거되어 TiN이 Ti로 환원된다. Cu는 TiN기판보다는 Ti기판상에서 핵생성이 더 잘 되므로 플라즈마 전처리는 Cu의 핵생성을 돕는 효과를 가져온다.

• 한국산학기술학회논문지
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• 제12권11호
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• pp.4711-4717
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• 2011

PVD방식에 의한 TiN박막의 형성은 DC와 RF sputtering deposition 방식을 적용할 수 있지만, 플라즈마 생성을 위해 주입된 가스의 이온화율이 떨어져 박막성형 속도가 느려지며, 박막과의 접착력을 높이는 것에도 한계성을 가지고 있다. 이를 개선하기 위해 증착과 동시에 이온빔을 조사하는 이온빔 진공증착 IBAD(Ion beam assisted deposition)를 이용 하게 되면, 코팅 전에 소재 표면을 Ion beam으로 조사하기 때문에 표면cleaning의 효과가 크고, 접착력이 높은 박막을 얻을 수 있다. 또한 고 진공과 낮은 온도에서도 균일한 두께의 고순도의 박막을 얻을 수 있는 이점이 있다.

• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1874-1875
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• 2004

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The powersupply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of 10 ${\sim}$ 50 kHz and 10 ${\sim}$ 60 %, respectively. The deposition rate increased with increasing incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This technique is proposed to apply high through-put sputtering system for plasma display panel.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1236-1239
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• 2005

Aligned carbon nanotubes(CNTs) array were synthesized using DC plasma-enhanced chemical vapor deposition. Silicon substrate Ni-coated of 5nm thickness were pretreated by $NH_3$ gas with a flow rate of 180sccm, for 10min. CNTs were grown on the pretreated substrates at $30%\;C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters from 60 to 80 nanometers and lengths about 2.7 micrometers were obtained. Vertical alignment of carbon nanotubes were observed by FESEM.

• Journal of Korean Vacuum Science & Technology
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• 제6권4호
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• pp.143-148
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• 2002

Method of plasma-immersion ion deposition of hydrogenated DLC films on relatively thick flat dielectric substrates from plasma of not-self-sustained low-pressure gas arc discharge is suggested. Coating properties have been investigated experimentally, average energy Per a deposited carbon atom depending on discharge current has been calculated. Optimum deposition parameters lot obtaining sufficiently hard and transparent high-adhesive a-C:H films on a 4-mm thick glass substrates have been determined. Possibility to use these coatings for photo-tools protection from abrasion wear at low operating loads is shown in general.