• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.71-74
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• 2009

Electroplated Cu is a cost efficient metallization method in microelectronic packaging applications. Typically in 3-D chip staking technology, utilizing through silicon via (TSV), electroplated Cu metallization is inevitable for the throughput as well as reducing the cost of ownership (COO).To achieve a comparable film quality to sputtering or CVD, a pre-cleaning process as well as plating process is crucial. In this research, atmospheric plasma is employed to reduce the usage of chemicals, such as trichloroethylene (TCE) and sodium hydroxide (NaHO), by substituting the chemical assisted organic cleaning process with plasma surface treatment for Cu electroplating. By employing atmospheric plasma treatment, marginally acceptable electroplating and cleaning results are achieved without the use of hazardous chemicals. The experimental results show that the substitution of the chemical process with plasma treatment is plausible from an environmentally friendly aspect. In addition, plasma treatment on immersion Sn/Cu was also performed to find out the solderability of plasma treated Sn/Cu for practical industrial applications.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.100-106
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• 2024

To generate the plasma required in dry cleaning processes, the plasma chamber must be supplied with a high-quality AC voltage with a voltage of more than 1 kV and a frequency of 400 kHz. In the existing research, many methods to supply high power have been studied, but how to improve the quality of the power for high-quality plasma has been relatively little studied. In this paper, we propose a study to improve the quality of RF power circuit for high-quality plasma generation in dry cleaning method. Existing methods in the environment of full-bridge-based RF power circuits must perform PWM duty control in the light load region. This causes distortions in the waveform, resulting in poor power quality, which directly leads to poor plasma quality. To solve these problems, a half-bridge switching method is proposed and the improvement in waveform quality is verified. To verify the feasibility of the design and control algorithm proposed in this paper, an RF power circuit prototype is fabricated and the proposed design and control method is verified through simulation and actual experiments under dummy load.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.10
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• pp.710-715
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• 1999

The purpose of this work is to develop a high-efficiency air cleaning system for air pollutants such as particulate and gaseous state in indoor environments. In order to enhance a removal efficiency of gaseous state pollutants, we suggested that pulsed discharge plasma be combined with $TiO_2$ photocatalyst (photocatalytic plasma air cleaning unit). We investigated experimentally the basic characteristics of photocatalytic plasma air cleaning unit and measured air pollutants removal efficiency. The wavelength of light radiated from pulsed discharge plasma under the atmospheric condition was 310~380nm. Its energy is enough to excite the $TiO_2$ photocatalyst and it makes a photochemical reaction in the surface of $TiO_2$ photocatalyst. The removal quantity of trimethylamine$((CH_3)_3N)\; was\; 130mg/m^34 which is twice quantity of pulsed discharge plasma without $TiO_2$ phtocatalyst unit. From the result of gas analysis using FT-IR, nitric oxide was not detected and trimethylamine was decomposed to $H_2O\; and \;CO_2$. And trimethylamine removal efficiency was 95%. These experimental results indicate that photocatalytic plasma air cleaning unit is a potential method in removing the pollutants.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.146-150
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• 2021

Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

• Journal of Welding and Joining
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• v.19 no.3
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• pp.305-310
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• 2001

UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

• Clean Technology
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• v.18 no.3
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• pp.287-294
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• 2012

In this study, performances of two cleaning methods were analyzed and a cleaning system was designed to develop a cleaning process of electronic components to remanufacture old laser copy machine. First, plasma cleaning as a dry cleaning method was executed to test cleaning ability. In cleaning of printed circuit board (PCB) by plasma, some damages were found near the metal parts, and considering the productivity, this method was not adequate for the cleaning of electronic components. With 4 different cleaning agents, ultrasonic cleaning tests were executed to select an optimal cleaning agent, aqueous agents showed superior cleaning performance compared to semi-aqueous and non-aqueous agents. Cleaning with aqueous cleaning agent A and 28 kHz ultrasonic frequency can be completed in 30 sec to 1 min. Finally, an ultrasonic cleaning system was constructed based on the pre-test results. Optimal cleaning conditions of 40 kHz and $50^{\circ}C$ were found in the field test. The productivity and economic efficiency in remanufacturing of laser copy machine are expected to increase by adapting developed ultrasonic cleaning system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.6-14
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• 2006

This paper is a study about a proper method of plasma generation to cleaning method and a high frequency power equipment circuit to generation of plasma that used cleaning of chamber for TFT-LCD PECVD. The high density plasma required for cleaning causes a possibility of high density plasma more than $1{\times}10^{11}[EA/cm^3]$. It apply a ferrite core of ferromagnetic body to a existing ICP form. In case of power transfer equipment on 400[kHz] high frequency to generation of plasma it makes certain a stable switching operation in condition of plasma through using a inverter form for general purpose HB. And it demonstrates the performance of power transfer equipment using methods of measurement which use a transformer of series combination the density of plasma and the rate of dissolution of $NF_3$ in condition of $A_r\;and\;NF_3$.

• Applied Chemistry for Engineering
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• v.33 no.2
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• pp.229-233
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• 2022

In this study, a gas-liquid hybrid atmospheric pressure plasma reactor of the dielectric barrier discharge method was fabricated and characterized. The solubility of copper oxide in the organic acid solution was increased when argon having a larger atomic weight than helium was used during plasma discharge. There was no significant effect of mixing organic acid solutions under plasma discharge treatment on the variation of copper oxide's solubility. As the applied voltage for plasma discharge and the concentration of the organic acid solution increased, the dissolution and removal power of the copper oxide layer increased. Solubility of copper oxide was more affected by the concentration in organic acid solution rather than the variation of plasma applied voltage. The usefulness of hybrid plasma reactor for the surface cleaning process was confirmed.

• Laser Solutions
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• v.12 no.4
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• pp.17-25
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• 2009

The surface cleaning method based on the laser-induced breakdown (LIB) of gas and subsequent plasma and shock wave generation can remove small particles from solid surfaces. In the laser shock cleaning (LSC) process, a high-power laser pulse induces optical breakdown of the ambient gas above the solid surface covered with contaminant particles. The subsequently created shock wave followed by a high-speed flow stream detaches the particles. In this work, a novel surface cleaning process using laser-induced breakdown of liquid is introduced and demonstrated. LIB of a micro liquid jet increases the shock wave intensity and thus removes smaller particle than the conventional LSC method. Experiments demonstrate that the cleaning force and cleaning efficiency are also increased significantly by this method.