• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.2
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• pp.260-266
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• 2002

DLC films were deposited on Si wafer by RF plasma assisted CVD using CH4 gas. Tribological tests were conducted using rotating type ball on disk friction tester in dry air. Four kinds of mating balls were used. The mating balls were made with stainless steel but apply different annealing conditions to achieve different hardness conditions. Testing results in all load conditions showed that the harder the mating materials, the lower the friction coefficient among the three kind of martensite mating balls. In case of austenite balls, the friction coefficients were lower than fully annealed martensite ball. The high friction coefficient in soft martensite balls seems to be caused by the larger contact area between DLC film and ball. The wear tracks of DLC films and mating balls could have proven that effect. Measuring the wear track of both DLC films and mating balls have similar tendency comparing to the results of friction coefficients. Wear rate of austenite balls were also smaller than that of fully annealed martensite ball. The results of effect of applying load showed, the friction coefficients were become decrease when the applying loads exceed critical load conditions. The wear track of mating balls showed that some material transfer occurs from DLC film to mating ball during the high friction process. Raman spectra analysis showed that transferred material was a kind of graphite and contact surface of DLC film seems to undergo phase transition from carbon to graphite during the high friction process.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.307-311
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• 2009

In this study, TiCrN films were deposited on STS 316 Land Si (100) wafer by inductively coupled plasma (ICP) assisted D.C. magnetron sputtering. The effect R.F. power for ICP discharge on the mechanical properties of TiCrN films was investigated. XRD, XPS and FE-SEM were used for the structure analysis. Also the Micro-Knoop hardness tester and profilometer were used for measuring hardness of coatings and film stress respectively. As increasing the R.F. power for ICP discharge, thickness of coating was decreased from 1633 nm to 1288 nm but hardness was increased about $Hk_{5g}$ 4200 at 400 W. All of the XRD patterns showed (111), (200) and (220) peaks of TiCrN films. Surface morphology was studied using the profilometer. FE-SEM was used to know morphology and cross-section of the films. Structure of the films was changed dense as increased ICP power.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.387-395
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• 2001

The elastic modulus and the structural evolution were examined with the film thickness in polymeric, hard, graphitic diamond-like carbon (DLC) films. The DLC films used in the present study were prepared by radio frequency plasma assisted chemical vapor deposition (r.f.-PACVD) from $C_6H_6\;and\;CH_4$ gas. Elastic modulus of very thin DLC film was measured by free overhang method. This method has an advantage over the other methods. Because the substrate was removed by etching technique, the measured value is not affected by the mechanical property of the substrate. The structural evolution was investigated by the G-peak position of the Raman spectrum. The polymeric and graphitic films exhibited the decreased elastic modulus with decreasing film thickness. In polymeric films, the reason was that more polymeric film had been deposited in the initial stage of the film growth and in graphitic film more graphic films which had been deposited in the initial stage decreased the elastic modulus. The G-peak position of the Raman spectrum confirmed this result. On the other hand, the hard film showed the constant elastic modulus regardless to the film thickness. The structural change was not observed in this range of the film thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Clinical and Experimental Reproductive Medicine
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• v.41 no.4
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• pp.165-167
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• 2014

Objective: The objective of this study is to estimate the effects of Inclear, a feminine cleanser, on sperm motility. Methods: Semen samples were obtained from infertile male patients. Following liquefaction, the raw semen samples were diluted with Ham's F-10 nutrient mixture medium containing 0.4% human serum albumin solution at a ratio of 1:3. The semen samples were subsequently centrifuged to separate the seminal plasma from the serum. The supernatant was discarded, and the pellet was resuspended. The sample was again centrifuged to remove cell debris, and the supernatant was removed. The final pellet was gently loosened by resuspension and incubated in medium alone as a control, and in a 10% solution of the medium plus Inclear. A sampling time of 30 minutes was selected on the basis of sperm transport studies. Sperm motility was evaluated with computer-assisted sperm analysis. Results: A total of 20 samples were analyzed. The mean age of patients was $34.40{\pm}2.96years$. There was no difference in sperm concentration and motility in the two samples at 0 minute and 30 minutes of incubation. In both semen samples, the sperm concentration and motility decreased after an incubation period of 30 minutes. However, there was no statistical difference between the samples. Sperm concentration and motility were not significantly different between the control and Inclear samples after 0 minute and 30 minutes of incubation. Conclusion: Inclear has no negative effects on sperm motility. This product can be recommended to pregnancy planners for vaginal hygiene and as a vaginal lubricant.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.240-248
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• 2002

$Fe_xTi_{l-x}O_2$ films (x=0.07 and 0.16) were grown by oxygen-plasma-assisted molecular beam epitaxy on rutile $TiO_2$(110). The same growth conditions were applied for both films in order to determine surface characteristics of grown films as a function of Fe composition. The films were characterized by several surface analysis techniques. The oxidation states of Ti and Fe in $Fe_xTi_{l-x}O_2$ films were found to be +4 and a mixture of +2 and +3, respectively. More $Fe^{3+}$ species exist in higher Fe doped film of $Fe_{0.16}Ti_{0.84}O_2$. The morphology of $Fe_{0.07}Ti_{0.93}O_2$ film shows tall rectangular and cylinderical islands growth on flat substrate-like surface. On the other hand, $Fe_{0.16}Ti_{0.84}O_2$ film consists of round shaped small islands showing somewhat rougher surface compared to the surface of $Fe_{0.16}Ti_{0.84}O_2$ film.

• Tuberculosis and Respiratory Diseases
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• v.76 no.1
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• pp.38-41
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• 2014

Immunoglobulin G4 (IgG4)-related disease is a newly recognized condition characterized by fibroinflammatory lesions with dense lymphoplasmacytic infiltration, storiform-type fibrosis and obliterative phlebitis. The pathogenesis is not fully understood but multiple immune-mediated mechanisms are believed to contribute. This rare disease can involve various organs and pleural involvement is even rarer. We report a case of IgG4-related disease involving pleura. A 66-year-old man presented with cough and sputum production for a week. Chest radiography revealed consolidation and a pleural mass at right hemithorax. Treatment with antibiotics resolved the consolidation and respiratory symptoms disappeared, but the pleural mass was unchanged. Video-assisted thoracoscopic surgery was performed. Histopathology revealed dense lymphoplasmacytic infiltration and storiform fibrosis with numerous IgG4-bearing plasma cells. The serum IgG4 level was also elevated. Further examination ruled out the involvement of any other organ. The patient was discharged without further treatment and there is no evidence of recurrence to date.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.249-249
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• 1999

GaN과 같은 III-nitride 반도체 관한 식각 기술의 연구는 blue-emitting laser diode(LD)를 위한 경면(mirror facet)의 형성뿐만아니라 새로운 display 용도의 light emitting diodes (LED), 고온에서 작동되는 광전소자 제조 등에도 그 중요성이 증대되고 있다. 최근에는 III-nitride 물질의 높은 식각속도와 미려하고 수직한 식각형상을 이루기 위하여 ECR(Electron Cyclotron Resonance)이나 ICP(Inductively Coupled Plasma)와 같은 고밀도 플라즈마 식각과 CAIBE(Chemically assisted ion beam etching)를 이용한 연구가 진행되고 있다. 현재 제조되어 지고 있는 LED 및 LD와 같은 광소자의 구조의 대부분은 p-GaN/AlGaN/InGaN(Q.W)/AlGaN/n-GaN 와 같은 여러 층의 형태로 이루어져 있다. 이중 InGaN는 광소자나 전자소자의 특성에 영향을 주는 가장 중요한 부분으로써 현재까지 보고된 식각연구는 undoped GaN에 대부분 집중되고 있고 이에 비해 소자 특성에 핵심을 이루는 InGaN의 식각특성에 관한 연구는 미흡한 상황이다. 본 연구에서는 고밀도 플라즈마원인 ICP 장비를 이용하여 InGaN를 식각하였고, 식각에는 Cl2/CH4, Cl2/Ar 플라즈마를 사용하였다. InGaN의 식각특성에 영향을 미치는 플라즈마의 특성을 관찰하기 위하여 quadrupole mass spectrometry(QMS)와 optical emission spectroscopy(PES)를 사용하였다. 기판 온도는 5$0^{\circ}C$, 공정 압력은 5,Torr에서 30mTorr로 변화시켰고 inductive power는 200~800watt, bias voltage는 0~-200voltage로 변화시켰으며 식각마스크로는 SiO2를 patterning 하여 사용하였다. n-GaN, p-GaN 층 이외에 광소자 제조시 필수적인 InGaN 층을 100% Cl2로 식각한 경우에 InGaN의 식각속도가 GaN에 비해 매우 낮은 식각속도를 보였다. Cl2 gas에 소량의 CH4나 Ar gas를 첨가하는 경우와 공정압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%Ar 플라즈마에서 공정 압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%CHF3 와 Cl2/10%Ar 플라즈마에서 공정압력을 15mTorr로 감소시키는 경우 InGaN과 GaNrks의 선택적인 식각이 가능하였다. InGaN의 식각속도는 Cl2/Ar 플라즈마의 이온에 의한 Cl2/CHF3(CH4) 플라즈마에서의 CHx radical 형성에 의하여 증가하는 것으로 사료되어 진다.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.110-110
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• 1998

GaN는 직접천이형 에너지 캡을 가지며 In과 화합물을 형성할 경우 1.geV-3.4eV까지 다양한 에너지 캡을 가지므로 청색 발광소자 고출력소자 고온 전자소자둥 웅용성이 많 은 물절로서 각광을 받고 있다. 그러나 G랴‘에 적합한 기판이 없다는 문제점으로 인하여 F FET, LD와 같은 다양한 구조의 웅용에 제 약이 따랐다. 이에 본 연구에서는 RF(radio frequency) Plasma-Assisted MBE( molecular beam e epitaxy )를 이용하여 InxGaj xN/G암J 양자우물 구조를 성장하였다. 이렇게 성장된 I InxGaj xN 박막과 InxGaj xN/GaN 양자우물구조의 특성의 분석은 광학적 특성올 PL( p photoluminescence ) , 결 정 성 의 분석 은 XRD ( x-ray diffraction ), 표면 과 단변 의 계 변 특성은 SEM(scanning electron microscopy)을 이용하여 분석하였다. 저온 PL의 측정결 과 기판온도를 680$^{\circ}$C로 고정한 후 In cell의 온도를 650$^{\circ}$C에서 775$^{\circ}$C까지 증가함에 따라 I InxGaj xN에 관계된 피크위치가 약3이neV정도 red shift 함을 관찰할 수 있었다. 한편 I InxGaj xN/GaN 양자우물구조의 경우 PL피크가 3.2없eV로써 InxGaj- xN의 PL 피크에 비 해 에서 약 25me V 고에너지 이동이 관측되었으며 이것은 우불 내에서 에너지레벨의 c confinement효과에 의해 에너지의 변화에 의한 것엄올 확인하였으며, 양자우물 구조에서 우물의 두께를 줄임에 따라 변화 폭은 1이neV정도 고에너지 이동을 관찰할 수 있었다. X XRD 측정의 결과 In의 mole fraction에 따라 격자상수의 변화를 관찰하였으며, 결정 성의 변화를 피크의 세기로 관찰하였다 .. XRD로 판단한 In의 mole fraction은 0.2임을 알 았다 .. SEM 측정은 표변과 단면의 측정으로서 표연특성과 단면의 특성을 InxGaj xN, I InxGaj xN/GaN 양자우물 구조 모두 알아보았다. 측정 결과 InxGaj-xN의 성 장조건으로 기판온도가 낮아지면서 표면의 거칠기 정도가 증가하였으며,680$^{\circ}$C의 기판온도에서 성장 한 양자우물 구조에 있어서 매끄라운 표면올 얻올 수 있었다.

• Journal of Embryo Transfer
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• v.28 no.1
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• pp.63-71
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• 2013

In this study, we used flow a cytometric assay to evaluate plasma membrane integrity and mitochondrial activity in post-thawed sperm that was supplemented with ginsenoside-$Rg_1$. Varying concentrations of ginsenoside-$Rg_1$ (0, 25, 50 and $100{\mu}M/ml$) were used in the extender during cryopreservation to protect the DNA of thawed sperm, thereby increasing the viability and motility rate as evaluated using a computer-assisted sperm analysis (CASA) method. The results derived from CASA were used to compare the fresh, control, and ginsenoside-$Rg_1$ groups. Sperm motility and the number of progressively motile sperm were significantly (p<0.05) higher in the $50{\mu}M/ml$ ginsenoside-Rg1 group ($61.0{\pm}4.65%$) than in the control ($46.6{\pm}7.02%$), $25{\mu}M/ml$ ($46.2{\pm}4.76%$), and $100{\mu}M/ml$ ginsenoside-$Rg_1$ ($52.0{\pm}1.90%$) groups. However, the velocity distribution of post-thawed sperm did not differ significantly. Membrane integrity and MMP staining as revealed using flow cytometry were significantly (p<0.05) higher ($91.6{\pm}0.82%$) in the $50{\mu}M/ml$ ginsenoside-$Rg_1$ group than in the other groups. Here, we report that ginsenoside-$Rg_1$ affects the motility and viability of boar spermatozoa. Moreover, ginsenoside-$Rg_1$ can be used as a protective additive for the suppression of intracellular mitochondrial oxidative stress caused by cryopreservation.