• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.08a
• /
• pp.189-189
• /
• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.904-907
• /
• 2002

In this study, the plasma-assisted $CO_2$ conversion characteristics were investigated in the streamer corona discharge and silent discharge reactors with dielectric of $Al_2O_3$, to improve the conversion efficiency $CO_2$. Some discharge characteristics of $CO_2$ as parameters of gap spacing and applied voltage frequency, in both corona and silent discharge reactor were also obtained. The maximum $CO_2$ conversion rate was 10.1 [%] under the 5.2 [W] of discharge power and 250 [Hz] of applied voltage frequency.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.786-788
• /
• 1998

Synthetic diamond films were deposited on pretreated silicon substrate in activated gas phase using RF plasma-assisted CVD. We investigated the influence of $O_2$ gas on facets of diamond crystal. In $H_2-CH_4-O_2$ gas mixture, the increase of oxygen concentration lead to well-faceted diamond particles and increasing crystallinity of diamond films. The deposited diamond films were analyzed by SEM, XRD, Raman spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.07a
• /
• pp.114-114
• /
• 1997

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.113-116
• /
• 2003

The sustain discharge mode using various auxiliary pulses was proposed to improve both the luminance and luminous efficiency of ac-plasma display panel (ac-PDP). It was found that the various auxiliary pulses, which were applied at the rising and falling time of the sustain pulse, played a role in strengthening both the main and self-erasing discharges. As a result, the sustain waveforms with auxiliary pulse improved both the luminance of 23 % and the luminous efficiency of 36 %, when compared with the conventional sustain waveform without auxiliary pulse.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.21 no.5
• /
• pp.848-854
• /
• 2012

SCM420 steel cutting gear to improve the durability is quenched. When quenching, increases surface hardness, a change of the physical properties and machinability or fall. This study, using a solid carbide hobs skiving hobbing gear cutting finishing. And cutting tool solid carbide TiAlN coating hove when TiAlN coating on the surface of multi-con polishing hob conducted aero lap nano polishing for each cutting. Experimental results conducted aero lap nano coating on the surface polishing tool machinability was excellent. And aero lap nano polishing tool results were reduced 2.5 times the tool wear compared to TiAlN coated tools. Excellent results were 1.42 times longer tool life.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.02a
• /
• pp.224-225
• /
• 2000

Transparent and hard materials such as sapphire are used for many industrial applications as optical windows, hard materials on mechanical contact against abrasion, and substrate materials for opto-electronic semiconductor devices such as blue LED and blue LD etc. The materials should be cut along the proper shapes possible to be used for each application. In case of blue LED, the blue LED wafer should be cut to thousands of blue LED pieces at the final stage of the manufacturing process. The process of cutting the wafer is usually divided into two steps. The wafer is scribed along the proper shapes in the first step. It is inserted between transparent flexible sheets for easy handling. And then, it is broken and split in the next step. Harder materials such as diamonds are usually used to scribe the wafer, while it has a problem of low depth of scribing and abrasion of the harder material itself. The low depth of scribing can induce failure in breaking the wafer along the scribed line. It was also known that the expensive diamond tip should be replaced frequently for the abrasion. (omitted)

• Journal of the Korean Society for Heat Treatment
• /
• v.3 no.1
• /
• pp.17-24
• /
• 1990

In this study, TiN film was deposited onto steel by R.F.-PACVD in order to investigate the influence of parameters on the adhesion strength between film and substrate. Experimental results showed that adhesion strength by SAT is different from by optical microscopy. Adhesion strength is increased when the deposition temperature increases and is influenced by R.F. power and electrode distance. Especially heat treatment on the substrate has influenced over the adhesion strength, so it showed the 22 Newtons in adhesion strength by SAT and adhesion strength is decreased when deposition thickeness is thick and hardness is high. Also if the film is thick and high hardness simultaneous, the film was delaminated seriously.

• Journal of Advanced Marine Engineering and Technology
• /
• v.24 no.6
• /
• pp.139-146
• /
• 2000

The development of high performance materials is very important subject in order to enhance the properties of bearings whose role is to transfer energy harmoniously by reducing the problem of friction and wear down, etc. between the interacting solid surfaces in relative motion under high loads in comply with mechanical operating mechanism of engines. In this study, several (100-x)Al-xSn coating films (where x=85, 75, 65 atomic % at Al) on substrates which are abt. 2mm thickenss of Kelmet layer sintered back steel were prepared by using RF sputtering system. These coating films were observed the morphology by SEM(Scanning Electron Microscope) and investigated the crystal structure by XRD(X-ray Diffractor) for their properties. And friction coefficient of these films was measured by ball-on-disc tester for their tribological properties. From the experimental results, it was shown that high performance properties of bearing can be improved greatly by controlling the composition and morphology of material surface with effective use of the plasma-assisted sputtering process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.95-96
• /
• 2005

The general method and mechanism for the polarity control of heteroepitaxial wurtzite films, such as ZnO and GaN, by interface engineering via plasma-assisted molecular beam epitaxy are addressed. We proposed the principle and method controlling the crystal polarity of ZnO on GaN and GaN on ZnO. The crystal polarity of the lower film was maintained by forming a heterointerfce without any interface layer between the upper and the lower layers. However the crystal polarity could be changed by forming the heterointerface with the interface layer having an inversion center. The principle and method suggested here give us a promising tool to fabricate polarity inverted heterostructures, which applicable to invent novel heterostructures and devices.