• Title/Summary/Keyword: plasma assisted

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Conductivity Improvement of Polyaniline/Nylon 6 Fabrics (폴리아닐린/나일론 6 복합직물의 전기 전도도 향상 연구)

  • 오경화;성재환;김성훈
    • Polymer(Korea)
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    • v.24 no.5
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    • pp.673-681
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    • 2000
  • Electrically conductive composites have been prepared by treating fabrics with oxidizing agent and exposing them to aniline, which deposited a substantial amount of conductive polymer within the interstices of the material. However the conductivity of the composite fabrics was limited by the irregular deposition of the conductive polymer layer. To improve the conductivity of polyaniline/nylon 6 composite fabrics, we modified the surface characteristics of nylon 6 fabrics by various plasma treatments and increased diffusion and adsorption of aniline by ultrasonic treatments. By the oxygen plasma treatment, attachment of functional groups such as C-O and C-OH increased on the surface of nylon 6 fiber, which promoted adhesion to polyaniline resulting in the higher add-on and electrical conductivity. Electrical conductivities of polyaniline/nylon 6 composite fabrics were highly increased by ultrasonic treatment, which assisted the diffusion of aniline into the inside of nylon fabrics by cavitation and vibration. Also, the effects of monomer concentration and the number of deposition cycles on the nylon 6 fabric conductivity Were investigated. As a result, the fabric conductivity increased with the monomer concentration and the number of polymerization deposition cycles.

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Etch Characteristics of TiN Thin Films in the Inductively Coupled Plasma System (유도 결합 플라즈마를 이용한 TiN 박막의 식각 특성)

  • Um, Doo-Seung;Kang, Chan-Min;Yang, Xue;Kim, Dong-Pyo;Kim, Chang-Il
    • Journal of the Korean institute of surface engineering
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    • v.41 no.3
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    • pp.83-87
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    • 2008
  • This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.

In situ Transesterification/Reactive Extraction of Castor Bean Seeds Assisted by Flying Jet Plasma for Biodiesel Production

  • Elsheikh, Yasir A.;Abdul-Majeed, Wameath S.;Nasir, Qazi;Al-Rahbi, Balaqis;Al-Subhi, Noor;Mahmoud, Mohamed A.;AAl-Thani, Ghanim S.
    • Applied Chemistry for Engineering
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    • v.33 no.5
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    • pp.538-544
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    • 2022
  • One of the most exciting areas for the development of alternative fuels is the production of biodiesel. To reduce the cost of biodiesel production, in situ trans-esterification has been introduced to simplify the production process by enabling extraction and trans-esterification to occur at a single stage in the presence of a catalyst. In this study, we investigated the feasibility of using non-corrosive and environmentally receptive flying jet plasma as an alternative catalytic route for in situ tran-sesterification of castor bean seeds (CBS). Upon optimizing the reaction conditions, it is elucidated that applying a low ratio of methanol to seeds (≤6:1) has resulted in hindering the in situ trans-esterification and leading to insignificant conversion. The yield of esters has increased from 80.5% to 91.7% as the molar ratio rose from 9:1 to 12:1. Excess alcohol beyond the ratio of 15:1 was shown to have a negative impact on the yield of the produced esters, attributed to an increase in the biodiesel portion prone to dissolving in the co-product (glycerol). An increase in the reaction bulk temperature from 40 to 55 ℃ led to a higher ester content by 50%. Further increases in the bulk temperature beyond 55 ℃ did not affect yields. Regarding the reaction period, the results have shown that 3 h of reaction is adequate for a higher biodiesel yield. The quality of the biodiesel obtained has demonstrated that all physicochemical properties meet the ASTM D6751 specifications.

Effect of Si Addition on the Corrosion Resistance of Diamond-Like Carbon (DLC) Films

  • Kim, Woo-Jung;Kim, Jung-Gu;Park, Se-Jun;Lee, Kwang-Ryeol
    • Corrosion Science and Technology
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    • v.4 no.6
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    • pp.226-230
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    • 2005
  • Si incorporated diamond-like carbon (Si-DLC) films ranging from 0 to 2 at.% contents were deposited on STS 316L substrates for orthopedic implants by means of r.f. plasma-assisted chemical vapor deposition (r.f. PACVD) technique, using mixtures of benzene ($C_6H_6$) and silane ($SiH_4$) as the precursor gases. This study provides the reliable and quantitative data for assessment of the effect of Si incorporation on corrosion property in the simulated body fluid environment through the electrochemical test. It was found that corrosion to resistance of Si-DLC coatings with increasing Si content are improved owing to high $sp^3$ bonding.

Nucleation of CVD Diamond on Various Substrate Materials

  • Fukunaga, O.;Qiao, Xin;Ma, Yuefei;Shinoda, N.;Yui, K.;Hirai, H.;Tsurumi, T.;Ohashi, N.
    • The Korean Journal of Ceramics
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    • v.2 no.4
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    • pp.184-187
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    • 1996
  • Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

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Theoretical Study of microscopic Etching Shape Evolution in Plasma-Assisted Etching Processes (플라즈마 식각 공정에서의 미세구조 식각에 관한 이론적 연구)

  • 이창덕;박상규
    • Journal of the Korean Vacuum Society
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    • v.3 no.1
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    • pp.77-93
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    • 1994
  • 플라즈마 식각 공정에서의 미세구조 식각 연구를 위하여 두종류의 미세식각 진전 모델을 제시하 였다. 모델 1에서는 Knudsen 확산 정도를 나타내는 Thiele 계수($\Phi$2) 의 변화와 마스크의 하전에 의한 이온의 회적이 식각 패턴에 미치는 영향을 고찰하였으며 모델 2에서는 이온의 충돌에 의한 분산 효과가 식각 패턴에 미치는 영향을 살펴보았다. 반응성 라디칼과 확산저항이 수직방향으로의 긱각깊이를 감소 시켜 RIE Lag를 일으키며 마스크의 하전에 의한 이온의 회절에 의하여 "dovetailing"형태의 식각 패턴 형성의 원인 이 됨을 알 수 있었다. 모델 2의 결과로부터 쉬스 지역에서의 이온의 분산이 심화될수록 "bowing" 형태의 식각패턴이 두드러졌으며 RIE Laggus상이 증가하는 것으로 나타났다.gus상이 증가하는 것으로 나타났다.

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