• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.120-126
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• 2000

This paper dealt with the developed portable electric field meter which consisted of planar-type sensor, analog amplifier with gain controller, A/D convertor, and display unit. The principle of the planar-type sensor for detecting time-varying electric field of extremely low frequency (ELF) bandwidth was described, and a calibration system using cylindrical guard electrodes and parallel-plate electrodes was proposed. From the calibration experiment, the frequency bandwidth and the sensitivity of the developed electric field meter was $17[Hz]{\sim}7[kHz]$, and 4.45[mV/V/m], respectively. Also it can measure the electric field strength up to 10[kV/m], and the measured result was displayed on the liquid crystal display in digit. The electric field meter can be widely applied to measure electric field strength radiated from power lines, computers, and home appliances such as hair dryer, heater, etc.

• 한국신재생에너지학회:학술대회논문집
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• 2006.11a
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• pp.467-470
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• 2006

For a mobile application such as cellular phone, micro fuel cells should be extremely compact and thin. RHFC can be an alternative solution because RHFC gives higher power density than DMFC and does not need ahydrogen storage vessel In this paper, RHFC using methanol fuel is made as a novel planar design without a PROX. Both reformer and cell are made closely in a same plate to share the heater of reformer with the cell. The PBI membrane is used in the cell. The reason is that high temperature of reformer can cause a performance drop when perfluorosulfonic acid membrane such as Nafion is used such a high temperature operation also guarantees the higher CO tolerance to MEA catalyst. The cell is designed as an air-breathing type which the cathode of the cell is opened to the air. The commercial Cu/ZnO/Al2O3 steam reformer catalyst is packed in reformer channel. The active area of MEA is $11.9cm^2$ and the peak power density was $27.5mW/cm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.699-705
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• 2001

Six types of planar thermal converters from TC 1 to TC 6 were designed and fabricated for the purpose of being used as practical standards to alternating current. The respective voltage responses in air and in a vacuum of TC 6, which has the smallest thermal loss, were about 4.03mV/mW and about 6.38 mV/mW. Thermal time constant of TC 6, which has also the smallest heater thermal inertia, was about 8 ms. The respective variations of AC-DC voltage and current transfer errors from sample to sample, which were measured by FRDC(fast reversed DC) method, were about $\pm$0.41 ~$\pm$0.85 ppm and about $\pm$0.15~$\pm$1.16 ppm in the frequent range of 40 Hz~10 KHz with appling 1 V and 5 mA rms sine waves to the converters. All converters investigated exhibited sufficiently low AC-DC transfer errors to be used as practical standards.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.46-54
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• 1998

A planar Bi-Sb multijunction thermal converter, which is consisted of a linear or bifilar thin film NiCr-heater and a thin film Bi-Sb thermopile, has been fabricated, and its ac-dc transfer characteristics were examined in a frequency range from 10 Hz to 10 KHz. In order to increase the thermal sensitivity and to decrease the ac-dc transfer error of a thermal converter, the heater and the hot junctions of a thermopile were prepared on a Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-diaphragm which acts as a thermal isolation layer, and the cold junctions on the Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-thin film supported with the silicon rim which functions as a heat sink. The respective thermal sensitivities in air and in a vacuum of the converter with a built-in bifilar heater were about 14.0 ㎷/㎽ and 54.0 ㎷/㎽, and the ac-dc voltage and the current transfer difference ranges in air were about $\pm$0.60 ppm and $\pm$0.11 ppm, respectively, indicating that the ac-dc transfer accuracy of the converter are much higher than that of a commercial 3-dimensional multijunction thermal converter. However, the output thermoelectric voltage fluctuation of the converter was rather high.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.108-109
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• 2012

This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.