• 전자공학회논문지D
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• 제35D권5호
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• pp.63-68
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• 1998

The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

• 센서학회지
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• 제31권3호
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• pp.139-144
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• 2022

Advanced tactile sensors are receiving significant attention in various industries such as extended reality, electronic skin, organic user interfaces, and robotics. The capabilities of advanced tactile sensors require a variety of functions, including position sensing, pressure sensing, and material recognition. Moreover, they should comsume less power and be bio-friendly with human contact. Recently, a tactile sensor based on the triboelectrification effect was developed. Triboelectric tactile sensors have the advantages of wide material availability, simple structure, and low manufacturing cost. Because they generate electricity by contact, they have low power consumption compared to conventional tactile sensors such as capacitive and piezoresistive. Furthermore, they have the ability to recognize the contact material as well as execute position and pressure sensing functions using the triboelectrification effect. The aim of this study is to introduce the progress of research on triboelectrification-based tactile sensors with various functions such as position sensing, pressure sensing and contact material recognition.

• 대한전자공학회논문지SD
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• 제45권11호
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• pp.63-70
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• 2008

본 논문에서는 MEMS 압력 센서의 스마트 센서 시스템을 구현하였다. 피에조 압력센서의 온도 드리프트 문제를 해결하기 위해 외부 환경에 맞춰 시스템이 스스로 발생 오차를 제거하는 보상 알고리즘과 이에 의해 제어되는 프로그래머블한 보정 회로를 제안하였다. 시스템은 신호처리부, 보정 회로, 온도 감지부, 그리고 마이크로프로세서 및 통신부가 SOC으로 구현되었으며, RS-232 인터페이스가 시스템의 모니터링 및 제어를 위해 사용되었다. 구현된 IC의 면적은 $4.38{\times}3.78\;mm^2$이며 $0.35{\mu}m$ CMOS 공정으로 제작되었다. $-40^{\circ}C{\sim}150^{\circ}C$ 온도 범위에서 50 KPa급 MEMS 압력센서의 온도 드리프트 보상 오차는 ${\pm}0.48%$로 측정되었다. 구현된 시스템의 전력소모는 30.5mW로 측정되었다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2005년도 춘계학술대회 논문집
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• pp.405-410
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• 2005

현재 압력이나 가속도를 측정하기 위해 사용되는 반도체 센서 중에서 압저항 센서가 가장 광범위하게 적용되고 있다. 이러한 압저항 센서는 반도체 공정에 의해서 제작되고, 기존의 센서보다 높은 민감도를 가지므로 그 적용성이 매우 높다. 하지만, 압저항 센서를 형성하는 구조물의 형상과 관련된 연구가 국내에서 미비하므로 이에 대한 연구가 요구된다. 본 연구에서는 과도한 압력에 센서를 보호하기 위한 보스(Boss)와 민감도 향상을 위해 사용되는 매스(Seismic Mass)의 기하학적 변화가 민감도에 미치는 영향을 압저항 분포를 통하여 분석하고, 적절한 위치와 크기를 제시하고자 한다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.790-793
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• 2005

In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the effect of residual stress induced in piezoresistor on the distribution of resistance change ratio and supposed the feasible position of piezoresistor. The resulting are following; The tensile residual stress in the vicinity of piezoresistor decreased the value of resistance change ratio and could not effect on all the area of diaphragm but local area around the piezoresistor. Also, the piezoresistor in the diaphragm type pressure sensor with boss should fabricate in the edge of boss in order to increase the sensitivity of pressure sensor.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.186-189
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• 2004

Sensor used by semiconductor process produced an MAP sensor and applied to several industry. Among those sensors divided as transducer which convert physical quantity into electrical value, piezoresistive type sensor has been studied for the properties and sensitivity of piezoresistor. In this paper, the variation of seismic mass which have been functioned as actuator moving the cantilever beam analyzed the effect on distribution of resistance change ratio and supposed the optimal shape and position of piezoresistor. The resulting are following; According to the increment of seismic mass size, the value of resistance change ratio decreased caused by improve the stiffness. Y directional piezoresistor is formed in spot of 100 m apart from cantilever edge and length of that is 800$\mu$m. To increase the sensitivity, piezoresistor is made as n-type and x-direction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.134-138
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.135-141
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by OC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$ and annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• 반도체디스플레이기술학회지
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• 제14권2호
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• pp.23-27
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• 2015

In this paper, eco-friendly paper strain gauge was fabricated in the way of printing strain gauge on paper substrate, using PEDOT:PSS ink and inkjet printer technology. As a p-type conductive high polymer, PEDOT:PSS is known to be piezoresistive effect. I formed a strain gauge by connecting in parallel 5 lines of $60{\mu}m$ width printed with PEDOT:PSS. To minimize surrounding influence such as temperature, I formed wheat-stone bridge by combining 4 strain gauges (quarter-bridge strain gauge) which were made up of PEDOT:PSS 5 lines and measured. In quarter-bridge strain gauge, only two strain gauges, facing each other, arranged in strain and horizontal direction were deformed while the other two strain gauge of vertical direction were not. Therefore, quarter-bridge strain gauge showed the output of half bridge. The fabricated quarter-bridge strain gauge had output sensitivity of $105.6{\mu}V/V{\cdot}mm$ and its output linearity was relatively good.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1229-1230
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• 2015

Monitoring of mechanical properties of tissues as well as direction/quantities of forces is considered as an essential way for disease diagnosis and haptic feedback systems. There are extensively increasing interests for measuring normal/shear force and touch feelings, especially for surgery systems. Highly sensitive and flexible tactile sensor is needed in palpation for detecting cancer cyst as well as real time pressure monitoring in minimally invasive surgery (MIS). Importantly, MEMS technique with miniaturized fabrication technique is essential for the on-chip integration with biopsy and biomedical grasper. Here, we propose the flexible tactile sensor with high sensitivity based on piezoresistive effect. We analyzed the sensitivity according to the pressure and directions and showed the ability of discrimination of the different materials surfaces, illustrating the feasibility of the flexible tactile sensor for biomedical grasper by mimicking human skin.